AAAAAA

   
Results: 1-17 |
Results: 17

Authors: BATENTSCHUK M FASBENDER R HACKENSCHMIED P LI H THOMS M WINNACKER A
Citation: M. Batentschuk et al., ON THE ROLE OF NONSTOICHIOMETRY ON THE PHOTOSTIMULATED LUMINESCENCE IN BA(1-X)SRXFBR-EU, Radiation measurements, 29(3-4), 1998, pp. 299-305

Authors: HEINDL J DORSCH W STRUNK PP MULLER SG ECKSTEIN R HOFMANN D WINNACKER A
Citation: J. Heindl et al., DISLOCATION CONTENT OF MICROPIPES IN SIC, Physical review letters, 80(4), 1998, pp. 740-741

Authors: HECHT C KUMMER R WINNACKER A
Citation: C. Hecht et al., PERSISTENT SPECTRAL-HOLE BURNING IN SIC-V VIA EXCITED-STATE ABSORPTION, Journal of luminescence, 76-7, 1998, pp. 95-99

Authors: KUMMER R HECHT C THOMS M WINNACKER A
Citation: R. Kummer et al., EXPERIMENTAL-STUDY OF THE ADMIXTURE OF CONTINUUM STATES TO THE DISCRETE EXCITED-STATE OF EL2 IN GAAS, Journal of luminescence, 76-7, 1998, pp. 152-156

Authors: WEBER AD MULLER M HOFMANN D WINNACKER A
Citation: Ad. Weber et al., GROWTH STABILITY OF ZINC SELENIDE BULK CRYSTALS FROM SOLUTIONS, Journal of crystal growth, 185, 1998, pp. 1048-1052

Authors: HEINDL J DORSCH W ECKSTEIN R HOFMANN D MAREK T MULLER SG STRUNK HP WINNACKER A
Citation: J. Heindl et al., THE KINETIC GROWTH-MODEL APPLIED TO MICROPIPES IN 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1269-1271

Authors: MULLER SG ECKSTEIN R HOFMANN D SCHMITT E SCHOIERER W WINNACKER A DORSCH W STRUNK HP
Citation: Sg. Muller et al., MICROPIPES AND POLYTYPISM AS A SOURCE OF LATERAL INHOMOGENEITIES IN SIC SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 392-394

Authors: HECHT C KUMMER R THOMS M WINNACKER A
Citation: C. Hecht et al., HIGH-RESOLUTION SPECTROSCOPY OF THE ZERO-PHONON LINE OF THE DEEP DONOR EL2 IN GAAS, Physical review. B, Condensed matter, 55(20), 1997, pp. 13625-13629

Authors: KUMMER R HECHT C WINNACKER A
Citation: R. Kummer et al., PERSISTENT SPECTRAL-HOLE BURNING IN THE WIDE-GAP SEMICONDUCTOR SIC DOPED WITH VANADIUM, Optics letters, 22(12), 1997, pp. 916-918

Authors: HEINDL J DORSCH W ECKSTEIN R HOFMANN D MAREK T MULLER S STRUNK HP WINNACKER A
Citation: J. Heindl et al., FORMATION OF MICROPIPES IN SIC UNDER KINETIC ASPECTS, Journal of crystal growth, 179(3-4), 1997, pp. 510-514

Authors: HOFMANN D ECKSTEIN R KOLBL M MAKAROV Y MULLER SG SCHMITT E WINNACKER A RUPP R STEIN R VOLKL J
Citation: D. Hofmann et al., SIC-BULK GROWTH BY PHYSICAL-VAPOR TRANSPORT AND ITS GLOBAL MODELING, Journal of crystal growth, 174(1-4), 1997, pp. 669-674

Authors: WITTMANN G WINNACKER A
Citation: G. Wittmann et A. Winnacker, PURELY OPTICAL MEASUREMENT OF THE RESISTIVITY DISTRIBUTION OF SEMIINSULATING INP, FE BY MEANS OF THE PHOTOREFRACTIVE EFFECT - RESPONSE, Applied physics letters, 70(8), 1997, pp. 1057-1057

Authors: KOSTLER W WINNACKER A ROSSNER W GRABMAIER BC
Citation: W. Kostler et al., EFFECT OF PR-CODOPING ON THE X-RAY-INDUCED AFTERGLOW OF (Y,GD)(2)O-3-EU, Journal of physics and chemistry of solids, 56(7), 1995, pp. 907-913

Authors: HOFMANN D HEINZE M WINNACKER A DURST F KADINSKI L KAUFMANN P MAKAROV Y SCHAFER M
Citation: D. Hofmann et al., ON THE SUBLIMATION GROWTH OF SIC BULK CRYSTALS - DEVELOPMENT OF A NUMERICAL PROCESS MODEL, Journal of crystal growth, 146(1-4), 1995, pp. 214-219

Authors: WITTMANN G WINNACKER A
Citation: G. Wittmann et A. Winnacker, PURELY OPTICAL MEASUREMENT OF THE RESISTIVITY DISTRIBUTION OF SEMIINSULATING INP-FE BY MEANS OF THE PHOTOREFRACTIVE EFFECT, Applied physics letters, 67(3), 1995, pp. 392-394

Authors: THOMS M VONSEGGERN H WINNACKER A
Citation: M. Thoms et al., OPTICAL AND THERMAL-PROPERTIES OF ELECTRON-TRAPPING AND HOLE-TRAPPINGSITES IN THE X-RAY STORAGE PHOSPHOR RBL-X (X=TL(+), IN(+), PB(2+), EU(2+), Journal of applied physics, 76(3), 1994, pp. 1800-1808

Authors: WITTMANN G MOSEL F MULLER G SEIDL A WINNACKER A
Citation: G. Wittmann et al., INVESTIGATION OF THE DISTRIBUTION OF FE IN SEMIINSULATING LEC-GROWN INP BY PHOTOLUMINESCENCE AND ABSORPTION IMAGING, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 91-93
Risultati: 1-17 |