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Results: 1-8 |
Results: 8
NARROW WIDTH EFFECTS OF BOTTOM-GATE POLYSILICON THIN-FILM TRANSISTORS
Authors: YAUNG DN FANG YK HWANG KC LEE KY WU KH HO JJ CHEN CY WANG YJ LIANG MS LEE JY WUU SG
Citation: Dn. Yaung et al., NARROW WIDTH EFFECTS OF BOTTOM-GATE POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 19(11), 1998, pp. 429-431
THE IMPACTS OF BACK-END HIGH-TEMPERATURE THERMAL TREATMENTS ON THE CHARACTERISTICS AND GATE OXIDE RELIABILITY OF THIN-FILM-TRANSISTOR IN ULTRA LARGE-SCALE INTEGRATED-CIRCUIT PROCESS
Authors: LEE KY FANG YK CHEN CW YAUNG DN WUU KH HO JJ LIANG MS WUU SG
Citation: Ky. Lee et al., THE IMPACTS OF BACK-END HIGH-TEMPERATURE THERMAL TREATMENTS ON THE CHARACTERISTICS AND GATE OXIDE RELIABILITY OF THIN-FILM-TRANSISTOR IN ULTRA LARGE-SCALE INTEGRATED-CIRCUIT PROCESS, JPN J A P 1, 36(5A), 1997, pp. 2628-2632
IMPACT OF HYDROGENATING PLASMA-INDUCED OXIDE CHARGING EFFECTS ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
Authors: LEE KY FANG YK CHENG CW HUANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., IMPACT OF HYDROGENATING PLASMA-INDUCED OXIDE CHARGING EFFECTS ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS, JPN J A P 1, 36(3A), 1997, pp. 1025-1029
THE ANOMALOUS BEHAVIOR OF HYDROGENATED UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS UNDER ELECTRIC STRESS/
Authors: LEE KY FANG YK CHEN CW HUANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., THE ANOMALOUS BEHAVIOR OF HYDROGENATED UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS UNDER ELECTRIC STRESS/, IEEE electron device letters, 18(8), 1997, pp. 382-384
THE ELECTROSTATIC CHARGING DAMAGE ON THE CHARACTERISTICS AND RELIABILITY OF POLYSILICON THIN-FILM TRANSISTORS DURING PLASMA HYDROGENATION
Authors: LEE KY FANG YK CHEN CW HUANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., THE ELECTROSTATIC CHARGING DAMAGE ON THE CHARACTERISTICS AND RELIABILITY OF POLYSILICON THIN-FILM TRANSISTORS DURING PLASMA HYDROGENATION, IEEE electron device letters, 18(5), 1997, pp. 187-189
TO SUPPRESS UV DAMAGE ON THE SUBTHRESHOLD CHARACTERISTIC OF TFT DURING HYDROGENATION FOR HIGH-DENSITY TFT SRAM
Authors: LEE KY FANG YK CHEN CW HWANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., TO SUPPRESS UV DAMAGE ON THE SUBTHRESHOLD CHARACTERISTIC OF TFT DURING HYDROGENATION FOR HIGH-DENSITY TFT SRAM, IEEE electron device letters, 18(1), 1997, pp. 4-6
HIGH-PERFORMANCE POLYSILICON THIN-FILM TRANSISTORS BY H2O PLASMA HYDROGENATION
Authors: LEE KY FANG YK CHEN CW LIANG MS WUU SG
Citation: Ky. Lee et al., HIGH-PERFORMANCE POLYSILICON THIN-FILM TRANSISTORS BY H2O PLASMA HYDROGENATION, Thin solid films, 305(1-2), 1997, pp. 327-329
RAPID THERMAL ANNEALING ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS IN PRACTICAL TFT SRAM PROCESS
Authors: LEE KY FANG YK CHEN CW LIANG MS WUU SG
Citation: Ky. Lee et al., RAPID THERMAL ANNEALING ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS IN PRACTICAL TFT SRAM PROCESS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1561-1562
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