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Results: 1-18 |
Results: 18
Modeling solar cell degradation in space: A comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches
Authors: Messenger, SR Summers, GP Burke, EA Walters, RJ Xapsos, MA
Citation: Sr. Messenger et al., Modeling solar cell degradation in space: A comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches, PROG PHOTOV, 9(2), 2001, pp. 103-121
Proton-induced damage in p(+)-n InP solar cells: the role of electron capture at high fluences
Authors: Romero, MJ Walters, RJ Araujo, D Messenger, SR Summers, GP Hoffman, RW Garcia, R
Citation: Mj. Romero et al., Proton-induced damage in p(+)-n InP solar cells: the role of electron capture at high fluences, MAT SCI E B, 80(1-3), 2001, pp. 294-298
Radiation response of n-type base InP solar cells
Authors: Walters, RJ Messenger, SR Summers, GP Romero, MJ Al-Jassim, MM Araujo, D Garcia, R
Citation: Rj. Walters et al., Radiation response of n-type base InP solar cells, J APPL PHYS, 90(7), 2001, pp. 3558-3565
Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells
Authors: Walters, RJ Summers, GP Messenger, SR Romero, MJ Al-Jassim, MM Garcia, R Araujo, D Freundlich, A Newman, F Vilela, MF
Citation: Rj. Walters et al., Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells, J APPL PHYS, 90(6), 2001, pp. 2840-2846
Benzodiazepines act an GABA(A) receptors via two distinct and separable mechanisms
Authors: Walters, RJ Hadley, SH Morris, KDW Amin, J
Citation: Rj. Walters et al., Benzodiazepines act an GABA(A) receptors via two distinct and separable mechanisms, NAT NEUROSC, 3(12), 2000, pp. 1274-1281
Use of displacement damage dose in an engineering model of GaAs solar cellradiation damage
Authors: Morton, TL Chock, R Long, KJ Bailey, S Messenger, SR Walters, RJ Summers, GP
Citation: Tl. Morton et al., Use of displacement damage dose in an engineering model of GaAs solar cellradiation damage, PROG PHOTOV, 8(3), 2000, pp. 339-343
Effect of stoichometry on the radiation response of InxGa1-xAs solar cells
Authors: Messenger, SR Walters, RJ Summers, GP Hoffman, RH Stan, MA
Citation: Sr. Messenger et al., Effect of stoichometry on the radiation response of InxGa1-xAs solar cells, PROG PHOTOV, 8(3), 2000, pp. 345-348
Radiation hard multi-quantum well InP/InAsP solar cells for space applications
Authors: Walters, RJ Summers, GP Messenger, SR Freundlich, A Monier, C Newman, F
Citation: Rj. Walters et al., Radiation hard multi-quantum well InP/InAsP solar cells for space applications, PROG PHOTOV, 8(3), 2000, pp. 349-354
Characterizing solar proton energy spectra for radiation effects applications
Authors: Xapsos, MA Barth, JL Stassinopoulos, EG Messenger, SR Walters, RJ Summers, GP Burke, EA
Citation: Ma. Xapsos et al., Characterizing solar proton energy spectra for radiation effects applications, IEEE NUCL S, 47(6), 2000, pp. 2218-2223
Failure analysis of heavily proton irradiated p(+)-n InGaP solar cells by EBIC and cathodoluminescence
Authors: Romero, MJ Walters, RJ Araujo, D Garcia, R
Citation: Mj. Romero et al., Failure analysis of heavily proton irradiated p(+)-n InGaP solar cells by EBIC and cathodoluminescence, MAT SCI E B, 66(1-3), 1999, pp. 189-193
Information technology, work and human development: A human rights perspective
Authors: Walters, RJ
Citation: Rj. Walters, Information technology, work and human development: A human rights perspective, REV CAN ET, 20(2), 1999, pp. 225-254
Detailed defect study in proton irradiated InP/Si solar cells
Authors: Walters, RJ Romero, MJ Araujo, D Garcia, R Messenger, SR Summers, GP
Citation: Rj. Walters et al., Detailed defect study in proton irradiated InP/Si solar cells, J APPL PHYS, 86(7), 1999, pp. 3584-3589
Structural changes in InP Si solar cells following irradiation with protons to very high fluences
Authors: Messenger, SR Jackson, EM Burke, EA Walters, RJ Xapsos, MA Summers, GP
Citation: Sr. Messenger et al., Structural changes in InP Si solar cells following irradiation with protons to very high fluences, J APPL PHYS, 86(3), 1999, pp. 1230-1235
Nonionizing energy loss (NIEL) for heavy ions
Authors: Messenger, SR Burke, EA Summers, GP Xapsos, MA Walters, RJ Jackson, EM Weaver, BD
Citation: Sr. Messenger et al., Nonionizing energy loss (NIEL) for heavy ions, IEEE NUCL S, 46(6), 1999, pp. 1595-1602
Spatial distribution of radiation-induced defects in p(+)-n InGaP solar cells
Authors: Romero, MJ Araujo, D Garcia, R Walters, RJ Summers, GP Messenger, SR
Citation: Mj. Romero et al., Spatial distribution of radiation-induced defects in p(+)-n InGaP solar cells, APPL PHYS L, 74(25), 1999, pp. 3812-3814
Radiation-induced order-disorder transition in p(+)-n InGaP solar cells
Authors: Romero, MJ Araujo, D Garcia, R Walters, RJ Summers, GP Messenger, SR
Citation: Mj. Romero et al., Radiation-induced order-disorder transition in p(+)-n InGaP solar cells, APPL PHYS L, 74(18), 1999, pp. 2684-2686
Probability of large solar proton events and their effect on the efficiency of GaAs solar cells
Authors: Xapsos, MA Messenger, SR Walters, RJ Summers, GP Burke, EA
Citation: Ma. Xapsos et al., Probability of large solar proton events and their effect on the efficiency of GaAs solar cells, PROG PHOTOV, 6(6), 1998, pp. 399-406
Carrier removal in p-type InP
Authors: Messenger, SR Walters, RJ Xapsos, MA Summers, GP Burke, EA
Citation: Sr. Messenger et al., Carrier removal in p-type InP, IEEE NUCL S, 45(6), 1998, pp. 2857-2860
Risultati: 1-18 |