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Results:
1-16
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Results: 16
Authors:
Hong, SK
Chen, Y
Ko, HJ
Wenisch, H
Hanada, T
Yao, T
Citation: Sk. Hong et al., ZnO and related materials: Plasma-assisted molecular beam epitaxial growth, characterization, and application, J ELEC MAT, 30(6), 2001, pp. 647-658
Authors:
Marbach, K
Ittermann, B
Fullgrabe, M
Heemeier, M
Kroll, F
Mai, F
Meier, P
Peters, D
Thiess, H
Ackermann, H
Stockmann, HJ
Zeitz, WD
Wenisch, H
Hommel, D
Landwehr, G
Citation: K. Marbach et al., Defect properties of ion-implanted nitrogen in ZnSe - art. no. 241201, PHYS REV B, 6324(24), 2001, pp. 1201
Authors:
Wagner, HP
Kuhnelt, M
Wenisch, H
Hommel, D
Citation: Hp. Wagner et al., Determination of band offset using continuous-wave two-photon excitation in a ZnSe quantum-well waveguide structure - art. no. 235319, PHYS REV B, 6323(23), 2001, pp. 5319
Authors:
Woggon, U
Luthgens, E
Wenisch, H
Hommel, D
Citation: U. Woggon et al., Probing the electron-LO-phonon interaction of a single impurity state in asemiconductor - art. no. 073205, PHYS REV B, 6307(7), 2001, pp. 3205
Authors:
Wenisch, H
Kirchner, V
Hong, SK
Chen, YF
Ko, HJ
Yao, T
Citation: H. Wenisch et al., Evaluation of ZnO substrates for homoepitaxy, J CRYST GR, 227, 2001, pp. 944-949
Authors:
Chen, YF
Hong, SK
Ko, HJ
Kirshner, V
Wenisch, H
Yao, T
Inaba, K
Segawa, Y
Citation: Yf. Chen et al., Effects of an extremely thin buffer on heteroepitaxy with large lattice mismatch, APPL PHYS L, 78(21), 2001, pp. 3352-3354
Authors:
Homburg, O
Sebald, K
Michler, P
Gutowski, J
Wenisch, H
Hommel, D
Citation: O. Homburg et al., Negatively charged trion in ZnSe single quantum wells with very low electron densities, PHYS REV B, 62(11), 2000, pp. 7413-7419
Authors:
Cho, MW
Chang, JH
Wenisch, H
Makino, H
Yao, T
Citation: Mw. Cho et al., Blue-green light emitting diodes with new p-contact layers: ZnSe/BeTe, PHYS ST S-A, 180(1), 2000, pp. 217-223
Authors:
Homburg, O
Michler, P
Sebald, K
Gutowski, J
Wenisch, H
Hommel, D
Citation: O. Homburg et al., The trion spin-singlet and -triplet states in ZnSe single quantum wells, J CRYST GR, 214, 2000, pp. 832-836
Authors:
Wenisch, H
Fehrer, M
Klude, M
Ohkawa, K
Hommel, D
Citation: H. Wenisch et al., Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes, J CRYST GR, 214, 2000, pp. 1075-1079
Authors:
Chang, JH
Cho, MW
Wang, HM
Wenisch, H
Hanada, T
Yao, T
Sato, K
Oda, O
Citation: Jh. Chang et al., Structural and optical properties of high-quality ZnTe homoepitaxial layers, APPL PHYS L, 77(9), 2000, pp. 1256-1258
Authors:
Ko, HJ
Chen, YF
Hong, SK
Wenisch, H
Yao, T
Look, DC
Citation: Hj. Ko et al., Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 77(23), 2000, pp. 3761-3763
Authors:
Wenisch, H
Behringer, M
Fehrer, M
Klude, M
Isemann, A
Ohkawa, K
Hommel, D
Citation: H. Wenisch et al., Device properties of homo- and heteroepitaxial ZnSe-based laser diodes, JPN J A P 1, 38(4B), 1999, pp. 2590-2597
Authors:
Homburg, O
Michler, P
Heinecke, R
Gutowski, J
Wenisch, H
Behringer, M
Hommel, D
Citation: O. Homburg et al., Biexcitonic gain characteristics in ZnSe-based lasers with binary wells, PHYS REV B, 60(8), 1999, pp. 5743-5750
Authors:
Grossmann, V
Heinke, H
Wenisch, H
Behringer, M
Hommel, D
Citation: V. Grossmann et al., Investigations of ZnSe based laser structures on ZnSe substrates by high resolution x-ray diffraction, J PHYS D, 32(10A), 1999, pp. A47-A50
Authors:
Wenisch, H
Fehrer, M
Klude, M
Isemann, A
Grossmann, V
Heinke, H
Ohkawa, K
Hommel, D
Prokesch, M
Rinas, U
Hartmann, H
Citation: H. Wenisch et al., Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates, J CRYST GR, 202, 1999, pp. 933-937
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