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Results: 1-25/26
Authors:
Wendler, E
Breeger, B
Wesch, W
Citation: E. Wendler et al., Anomalous damaging behaviour of AlAs during ion implantation at 15 K, NUCL INST B, 175, 2001, pp. 78-82
Authors:
Wendler, E
Breeger, B
Wesch, W
Citation: E. Wendler et al., In situ investigation of AlAs/GaAs interfaces during ion implantation at 15 K, NUCL INST B, 175, 2001, pp. 83-87
Authors:
Wesch, W
Opfermann, T
Schrempel, F
Hoche, T
Citation: W. Wesch et al., Track formation in KTiOPO4 by MeV implantation of light ions, NUCL INST B, 175, 2001, pp. 88-92
Authors:
Stonert, A
Turos, A
Nowicki, L
Breeger, B
Wendler, E
Wesch, W
Citation: A. Stonert et al., Compositional dependence of defect mobility and damage buildup in AlxGa1-xAs, NUCL INST B, 175, 2001, pp. 219-223
Authors:
Wesch, W
Wendler, E
Dharmarasu, N
Citation: W. Wesch et al., Effects of the ion energy on damage production in MeV ion-implanted GaAs, NUCL INST B, 175, 2001, pp. 257-261
Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K
Authors:
Breeger, B
Wendler, E
Trippensee, W
Schubert, C
Wesch, W
Citation: B. Breeger et al., Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K, NUCL INST B, 174(1-2), 2001, pp. 199-204
Authors:
Karmann, A
Wesch, W
Weber, B
Borner, HG
Jentschel, M
Citation: A. Karmann et al., Application of GRID to foreign atom localization in single crystals, J RES NAT I, 105(1), 2000, pp. 177-182
Authors:
Opfermann, T
Hoche, T
Wesch, W
Citation: T. Opfermann et al., Radiation damage in KTiOPO4 by ion implantation of light elements, NUCL INST B, 166, 2000, pp. 309-313
Authors:
Dubiel, M
Hofmeister, H
Schurig, E
Wendler, E
Wesch, W
Citation: M. Dubiel et al., On the stress state of silver nanoparticles in ion-implanted silicate glasses, NUCL INST B, 166, 2000, pp. 871-876
Authors:
Opfermann, T
Hoche, T
Klaumunzer, S
Wesch, W
Citation: T. Opfermann et al., Formation of amorphous tracks in KTiOPO4 during swift heavy ion implantation, NUCL INST B, 166, 2000, pp. 954-958
Authors:
Wesch, W
Wolf, GK
Citation: W. Wesch et Gk. Wolf, Proceedings of the Tenth International Conference on Radiation Effects in Insulators, Jena, Germany, 18-23 July 1999, NUCL INST B, 166, 2000, pp. VII-VIII
Authors:
Gaiduk, PI
Komarov, FF
Wesch, W
Citation: Pi. Gaiduk et al., Damage evolution in crystalline InP during irradiation with swift Xe ions, NUCL INST B, 164, 2000, pp. 377-383
Authors:
Breeger, B
Wendler, E
Schubert, C
Wesch, W
Citation: B. Breeger et al., Argon implantation into GaAs and in situ RBS analysis at 21 and 77 K, NUCL INST B, 161, 2000, pp. 415-418
Authors:
Schrempel, F
Opfermann, T
Wendler, E
Wesch, W
Citation: F. Schrempel et al., Determination of lattice displacements in Se implanted InP by RBS and PIXEchanneling experiments, NUCL INST B, 161, 2000, pp. 515-519
Authors:
Gaiduk, PI
Komarov, FF
Tishkov, VS
Wesch, W
Wendler, E
Citation: Pi. Gaiduk et al., Wurtzite InP formation during swift Xe-ion irradiation, PHYS REV B, 61(23), 2000, pp. 15785-15788
Authors:
Menzel, R
Gartner, K
Wesch, W
Hobert, H
Citation: R. Menzel et al., Damage production in semiconductor materials by a focused Ga+ ion beam, J APPL PHYS, 88(10), 2000, pp. 5658-5661
Authors:
Tashlykov, IS
Kasperovich, VI
Shadrukhin, MG
Kasperovich, AV
Wolf, GK
Wesch, W
Citation: Is. Tashlykov et al., Elastomer treatment by arc metal deposition assisted with self-ion irradiation, SURF COAT, 119, 1999, pp. 848-852
Authors:
Turos, A
Stonert, A
Breeger, B
Wendler, E
Wesch, W
Fromknecht, R
Citation: A. Turos et al., Low temperature transformations of defects in GaAs and AlGaAs, NUCL INST B, 148(1-4), 1999, pp. 401-405
Authors:
Menzel, R
Bachmann, T
Wesch, W
Citation: R. Menzel et al., Physical sputtering of III-V-semiconductors with a focused Ga+-beam, NUCL INST B, 148(1-4), 1999, pp. 450-453
Authors:
Breeger, B
Wendler, E
Schubert, C
Wesch, W
Citation: B. Breeger et al., In situ RBS investigation of damage production during ion implantation in AlxGa1-xAs at 20 K, NUCL INST B, 148(1-4), 1999, pp. 468-473
Authors:
Wesch, W
Heft, A
Menzel, R
Bachmann, T
Peiter, G
Hobert, H
Hoche, T
Dannberg, P
Brauer, A
Citation: W. Wesch et al., Ion beam processing of SiC for optical application, NUCL INST B, 148(1-4), 1999, pp. 545-550
Authors:
Opfermann, T
Bachmann, T
Wesch, W
Rottschalk, M
Citation: T. Opfermann et al., He+ implantation for waveguide fabrication in KTP and Rb : KTP, NUCL INST B, 148(1-4), 1999, pp. 710-714
Authors:
Wendler, E
Breeger, B
Schubert, C
Wesch, W
Citation: E. Wendler et al., Comparative study of damage production in ion implanted III-V-compounds attemperatures from 20 to 420 K, NUCL INST B, 147(1-4), 1999, pp. 155-165
Authors:
Turos, A
Stonert, A
Breeger, B
Wendler, E
Wesch, W
Citation: A. Turos et al., Thermally activated defect transformations in III-V compound semiconductors, NUKLEONIKA, 44(2), 1999, pp. 93-101
Authors:
Gaiduk, PI
Komarov, FF
Tishkov, VS
Herre, O
Wendler, E
Wesch, W
Citation: Pi. Gaiduk et al., Wurtzite InP phase formation during swift Xe ion irradiation, NUKLEONIKA, 44(2), 1999, pp. 189-193