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Results:
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Results: 10
Authors:
Koh, A
Kestle, A
Wright, C
Wilks, SP
Mawby, PA
Bowen, WR
Citation: A. Koh et al., Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide, APPL SURF S, 174(3-4), 2001, pp. 210-216
Authors:
Kestle, A
Koh, A
Wright, C
Wilks, SP
Mawby, PA
Bowen, WR
Citation: A. Kestle et al., Sacrificial Si and SiO2 layers as surface preparation technique for SiC, ELECTR LETT, 37(6), 2001, pp. 395-396
Authors:
Kestle, A
Wilks, SP
Dunstan, PR
Pritchard, M
Mawby, PA
Citation: A. Kestle et al., Improved Ni/SiC Schottky diode formation, ELECTR LETT, 36(3), 2000, pp. 267-268
Authors:
Kestle, A
Wilks, SP
Citation: A. Kestle et Sp. Wilks, Consideration of space charge effects and effective mass non-parabolicity when optimising multi quantum barriers, JPN J A P 1, 38(10), 1999, pp. 5839-5846
Authors:
Wilks, SP
Williams, RH
Pan, M
Dunstan, PR
Cowie, BCC
Citation: Sp. Wilks et al., Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions, J VAC SCI B, 17(4), 1999, pp. 1666-1673
Authors:
Vila, A
Peiro, F
Cornet, A
Clark, SA
Wilks, SP
Elliott, M
Citation: A. Vila et al., Microscopic investigation of intimate metal - InxGa1-xAs dot contacts obtained at room and cryogenic temperatures, MAT SCI E B, 66(1-3), 1999, pp. 203-208
Authors:
Pan, M
Wilks, SP
Dunstan, PR
Pritchard, M
Williams, RH
Cammack, DS
Clark, SA
Citation: M. Pan et al., Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets, THIN SOL FI, 344, 1999, pp. 605-608
Authors:
Maffeis, TGG
Clark, SA
Dunstan, PR
Wilks, SP
Evans, DA
Peiro, F
Riechert, H
Parbrook, PJ
Citation: Tgg. Maffeis et al., GaN cleaning by Ga deposition, reduction and re-evaporation: An SXPS study, PHYS ST S-A, 176(1), 1999, pp. 751-754
Authors:
Dunstan, PR
Wilks, SP
Teng, KS
Pritchard, MA
Williams, RH
Citation: Pr. Dunstan et al., The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy, J APPL PHYS, 86(10), 1999, pp. 5636-5641
Authors:
Teng, KS
Dunstan, PR
Wilks, SP
Williams, RH
Citation: Ks. Teng et al., The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving, APPL PHYS L, 75(17), 1999, pp. 2590-2592
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