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Results: 76-100/108

Study of the inter-band transition of the GaAs single-crystal film on SrTiO3 substrate by MBE

Authors: Chen, YD Liu, XQ Lu, W Shi, GL Shen, XC Zhao, QX Willander, M

Citation: Yd. Chen et al., Study of the inter-band transition of the GaAs single-crystal film on SrTiO3 substrate by MBE, ACT PHY C E, 48(9), 1999, pp. 1718-1722

Suppression of the tunneling effect by shallow junctions in field-effect transistor

Authors: Fu, Y Willander, M

Citation: Y. Fu et M. Willander, Suppression of the tunneling effect by shallow junctions in field-effect transistor, SUPERLATT M, 26(5), 1999, pp. 289-297

Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

Authors: Fu, Y Willander, M Liu, XQ Lu, W Shen, SC Tan, HH Yuan, S Jagadish, C

Citation: Y. Fu et al., Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire, SUPERLATT M, 26(5), 1999, pp. 307-315

Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors

Authors: Li, N Li, N Lu, W Liu, XQ Yuan, XZ Li, ZF Dou, HF Shen, SC Fu, Y Willander, M Fu, L Tan, HH Jagadish, C Johnston, MB Gal, M

Citation: N. Li et al., Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors, SUPERLATT M, 26(5), 1999, pp. 317-324

Superfluidity of indirect excitons in a quantum dot

Authors: Lozovik, YE Verzakov, SA Willander, M

Citation: Ye. Lozovik et al., Superfluidity of indirect excitons in a quantum dot, PHYS LETT A, 260(5), 1999, pp. 400-405

Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures

Authors: Shubina, TV Mamutin, VV Vekshin, VA Ratnikov, VV Toropov, AA Sitnikova, AA Ivanov, SV Karlsteen, M Sodervall, U Willander, M Pozina, G Bergman, JP Monemar, B

Citation: Tv. Shubina et al., Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures, PHYS ST S-B, 216(1), 1999, pp. 205-209

Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy

Authors: Pozina, G Bergman, JP Monemar, B Mamutin, VV Shubina, TV Vekshin, VA Toropov, AA Ivanov, SV Karlsteen, M Willander, M

Citation: G. Pozina et al., Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 445-450

Exciton polaritons in periodic nanostructures

Authors: Ivchenko, EL Willander, M

Citation: El. Ivchenko et M. Willander, Exciton polaritons in periodic nanostructures, PHYS ST S-B, 215(1), 1999, pp. 199-209

Superfluidity of indirect biexcitons in superlattices

Authors: Lozovik, YE Berman, OL Willander, M

Citation: Ye. Lozovik et al., Superfluidity of indirect biexcitons in superlattices, EUROPH LETT, 48(3), 1999, pp. 299-305

Hole mobility and diffusion coefficient in strained and relaxed doped GexSi1-x alloys

Authors: Grahn, KJ Fu, Y Willander, M

Citation: Kj. Grahn et al., Hole mobility and diffusion coefficient in strained and relaxed doped GexSi1-x alloys, PHYS SCR, T79, 1999, pp. 174-178

Optical and electrical characterization of MOCVD-grown modulation-doped field effect transistors

Authors: Zhao, QX Nawaz, M Karlsteen, M Sodervall, U Willander, M Stenarson, J Zirath, H Strupinski, W

Citation: Qx. Zhao et al., Optical and electrical characterization of MOCVD-grown modulation-doped field effect transistors, SEMIC SCI T, 14(8), 1999, pp. 736-739

Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma

Authors: Mamor, M Auret, FD Willander, M Goodman, SA Myburg, G Meyer, F

Citation: M. Mamor et al., Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma, SEMIC SCI T, 14(7), 1999, pp. 611-614

Modelling of high-dimensional diffusion stochastic process with nonlinear coefficients for engineering applications - part I: Approximations for expectation and variance of nonstationary process

Authors: Mamontov, YV Willander, M Lewin, T

Citation: Yv. Mamontov et al., Modelling of high-dimensional diffusion stochastic process with nonlinear coefficients for engineering applications - part I: Approximations for expectation and variance of nonstationary process, MATH MOD M, 9(8), 1999, pp. 1201-1246

Modelling of high-dimensional diffusion stochastic process with nonlinear coefficients for engineering applications - part II: Approximations for covariance and spectral density of stationary process

Authors: Mamontov, YV Willander, M

Citation: Yv. Mamontov et M. Willander, Modelling of high-dimensional diffusion stochastic process with nonlinear coefficients for engineering applications - part II: Approximations for covariance and spectral density of stationary process, MATH MOD M, 9(8), 1999, pp. 1247-1277

Radiative recombination in p-type delta-doped layers in GaAs

Authors: Zhao, QX Willander, M Holtz, PO Lu, W Dou, HF Shen, SC Li, G Jagadish, C

Citation: Qx. Zhao et al., Radiative recombination in p-type delta-doped layers in GaAs, PHYS REV B, 60(4), 1999, pp. R2193-R2196

Broadening of the excitonic mobility edge in a macroscopically disordered CdSe/ZnSe short-period superlattice

Authors: Toropov, AA Shubina, TV Sorokin, SV Lebedev, AV Kyutt, RN Ivanov, SV Karlsteen, M Willander, M Pozina, GR Bergman, JP Monemar, B

Citation: Aa. Toropov et al., Broadening of the excitonic mobility edge in a macroscopically disordered CdSe/ZnSe short-period superlattice, PHYS REV B, 59(4), 1999, pp. R2510-R2513

Conduction modelling of a conductive adhesive with bimodal distribution ofconducting element

Authors: Fu, Y Liu, J Willander, M

Citation: Y. Fu et al., Conduction modelling of a conductive adhesive with bimodal distribution ofconducting element, INT J ADHES, 19(4), 1999, pp. 281-286

Short-channel effects in Si/Si1-xGex retrograde double quantum well p-MOSFETs

Authors: Yousif, MYA Chretien, O Nur, O Willander, M

Citation: Mya. Yousif et al., Short-channel effects in Si/Si1-xGex retrograde double quantum well p-MOSFETs, SOL ST ELEC, 43(5), 1999, pp. 969-976

MBE growth of hexagonal InN films on sapphire with different initial growth stages

Authors: Mamutin, VV Vekshin, VA Davydov, VY Ratnikov, VV Shubina, TV Ivanov, SV Kopev, PS Karlsteen, M Soderwall, U Willander, M

Citation: Vv. Mamutin et al., MBE growth of hexagonal InN films on sapphire with different initial growth stages, PHYS ST S-A, 176(1), 1999, pp. 247-252

Plasma-assisted MBE growth of GaN and InGaN on different substrates

Authors: Mamutin, VV Sorokin, SV Jmerik, VN Shubina, TV Ratnikov, VV Ivanov, SV Kop'ev, PS Karlsteen, M Sodervall, U Willander, M

Citation: Vv. Mamutin et al., Plasma-assisted MBE growth of GaN and InGaN on different substrates, J CRYST GR, 202, 1999, pp. 346-350

Optical properties of nanostructures self-organized in CdSe ZnSe fractional monolayer superlattices

Authors: Toropov, AA Shubina, TV Sorokin, SV Sedova, IV Sitnikova, AA Ivanov, SV Karlsteen, M Willander, M Bergman, JP Pozina, GR Monemar, B

Citation: Aa. Toropov et al., Optical properties of nanostructures self-organized in CdSe ZnSe fractional monolayer superlattices, J CRYST GR, 202, 1999, pp. 1231-1234

Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1-xGex layers

Authors: Mamor, M Nur, O Karlsteen, M Willander, M Auret, FD

Citation: M. Mamor et al., Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1-xGex layers, J APPL PHYS, 86(12), 1999, pp. 6890-6894

Theoretical investigation of shallow acceptors confined in Si/Si1-xGex quantum well structures

Authors: Zhao, QX Willander, M

Citation: Qx. Zhao et M. Willander, Theoretical investigation of shallow acceptors confined in Si/Si1-xGex quantum well structures, J APPL PHYS, 86(10), 1999, pp. 5624-5629

Noise in 6H-SiC ion implanted p-n diodes: Effect of the active area on thenoise properties of these junctions

Authors: Ouacha, H Willander, M Wahab, Q Ouacha, A Holmen, G

Citation: H. Ouacha et al., Noise in 6H-SiC ion implanted p-n diodes: Effect of the active area on thenoise properties of these junctions, J APPL PHYS, 85(9), 1999, pp. 6557-6562

Stress dependence of infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells

Authors: Zhao, QX Willander, M

Citation: Qx. Zhao et M. Willander, Stress dependence of infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells, J APPL PHYS, 85(7), 1999, pp. 3922-3924

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