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Results: 1-10 |
Results: 10
Predictive process simulation and stress-mediated diffusion in silicon
Authors: Windl, W Laudon, M Carlson, NN Daw, MS
Citation: W. Windl et al., Predictive process simulation and stress-mediated diffusion in silicon, COMPUT SC E, 3(4), 2001, pp. 92-95
Ab initio modeling study of boron diffusion in silicon
Authors: Windl, W Stumpf, R Liu, XY Masquelier, MP
Citation: W. Windl et al., Ab initio modeling study of boron diffusion in silicon, COMP MAT SC, 21(4), 2001, pp. 496-504
First-principles modeling of boron clustering in silicon
Authors: Windl, W Liu, XY Masquelier, MP
Citation: W. Windl et al., First-principles modeling of boron clustering in silicon, PHYS ST S-B, 226(1), 2001, pp. 37-45
Effect of stress on dopant and defect diffusion in Si: A general treatment- art. no. 045205
Authors: Daw, MS Windl, W Carlson, NN Laudon, M Masquelier, MP
Citation: Ms. Daw et al., Effect of stress on dopant and defect diffusion in Si: A general treatment- art. no. 045205, PHYS REV B, 6404(4), 2001, pp. 5205
Dynamical and optical properties of warm dense hydrogen - art. no. 184110
Authors: Collins, LA Bickham, SR Kress, JD Mazevet, S Lenosky, TJ Troullier, NJ Windl, W
Citation: La. Collins et al., Dynamical and optical properties of warm dense hydrogen - art. no. 184110, PHYS REV B, 6318(18), 2001, pp. 4110
Multiscale modeling of stress-mediated diffusion in silicon: Ab initio to continuum
Authors: Laudon, M Carlson, NN Masquelier, MP Daw, MS Windl, W
Citation: M. Laudon et al., Multiscale modeling of stress-mediated diffusion in silicon: Ab initio to continuum, APPL PHYS L, 78(2), 2001, pp. 201-203
Ab initio modeling of boron clustering in silicon (vol 77, pg 2018, 2000)
Authors: Liu, XY Windl, W Masquelier, MP
Citation: Xy. Liu et al., Ab initio modeling of boron clustering in silicon (vol 77, pg 2018, 2000), APPL PHYS L, 77(24), 2000, pp. 4064-4064
Ab initio modeling of boron clustering in silicon
Authors: Liu, XY Windl, W Masquelier, MP
Citation: Xy. Liu et al., Ab initio modeling of boron clustering in silicon, APPL PHYS L, 77(13), 2000, pp. 2018-2020
Theoretical study of graphitic analogues of simple semiconductors
Authors: Fuentes-Cabrera, M Munoz, A Windl, W Demkov, AA Sankey, OF
Citation: M. Fuentes-cabrera et al., Theoretical study of graphitic analogues of simple semiconductors, MODEL SIM M, 7(6), 1999, pp. 929-938
First-principles study of boron diffusion in silicon
Authors: Windl, W Bunea, MM Stumpf, R Dunham, ST Masquelier, MP
Citation: W. Windl et al., First-principles study of boron diffusion in silicon, PHYS REV L, 83(21), 1999, pp. 4345-4348
Risultati: 1-10 |