AAAAAA

   
Results: 1-16 |
Results: 16

Authors: Woo, DH Choi, SJ Han, DH Kang, H Park, SM
Citation: Dh. Woo et al., Nanosized tellurium clusters grown at thiolated beta-cyclodextrin molecular template modified electrodes: Electrochemical deposition and STM characterization, PHYS CHEM P, 3(16), 2001, pp. 3382-3386

Authors: Han, IK Woo, DH Kim, SH Lee, JI Heo, DC Jeong, JC Johnson, FG Cho, SH Song, JH Heim, PJS Dagenais, M
Citation: Ik. Han et al., Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodes, J KOR PHYS, 38(3), 2001, pp. 177-181

Authors: Shim, SI Kim, KT Kim, KM Kim, HD Kim, SE Park, JH Woo, DH
Citation: Si. Shim et al., InP/InGaAsP multiple quantum well multimode interference coupler, J KOR PHYS, 38(3), 2001, pp. 191-194

Authors: Choi, SJ Woo, DH Myung, NS Kang, H Park, SM
Citation: Sj. Choi et al., Electrochemical preparation of cadmium selenide nanoparticles by the use of molecular templates, J ELCHEM SO, 148(9), 2001, pp. C569-C573

Authors: Han, IK Cho, SH Heim, PJS Woo, DH Kim, SH Song, JH Johnson, FG Dagenais, M
Citation: Ik. Han et al., Dependence of the light-current characteristics of 1.55-mu m broad-area lasers on different p-doping profiles, IEEE PHOTON, 12(3), 2000, pp. 251-253

Authors: Woo, DH Yoon, TS Byun, YS
Citation: Dh. Woo et al., A study on blind adaptive receiver for DS-CDMA systems, IEICE T FUN, E83A(6), 2000, pp. 1168-1174

Authors: Park, YH Kang, BK Lee, S Woo, DH Kim, SH
Citation: Yh. Park et al., Structure of the quantum well for a broad-band semiconductor optical amplifier, J KOR PHYS, 36(4), 2000, pp. 206-208

Authors: Choi, SG Woo, DH Kim, SH Oh, MS Kim, YD
Citation: Sg. Choi et al., Gas-source molecular-beam epitaxial growth and optical characterization ofAlxGa1-xP (0 <= x <= 78) alloy films, J KOR PHYS, 36(4), 2000, pp. 233-236

Authors: Yi, HT Cho, J Choi, WJ Woo, DH Kim, SH Kang, KN
Citation: Ht. Yi et al., Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers, J MAT SCI L, 19(10), 2000, pp. 835-836

Authors: Woo, DH Oh, MS Koh, EH Yahng, JS Kim, SH Kim, YD
Citation: Dh. Woo et al., Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy, MICROEL ENG, 51-2, 2000, pp. 171-179

Authors: Choi, SG Kim, YD Yoo, SD Aspnes, DE Woo, DH Kim, SH
Citation: Sg. Choi et al., Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys, J APPL PHYS, 87(3), 2000, pp. 1287-1290

Authors: Kim, DG Lee, JJ Choi, YW Lee, S Woo, DH Kang, BK Kim, SH
Citation: Dg. Kim et al., Improved performances or AlGaAs-GaAsNpnP optical thyristor using bottom mirror layers, ELECTR LETT, 36(4), 2000, pp. 348-349

Authors: Oh, MS Choi, SG Kim, YD Woo, DH Koh, EH Kim, SH Kang, KN Rhee, SJ Woo, JC
Citation: Ms. Oh et al., Optical studies on a series of AlAs/GaAs short period superlattices, J KOR PHYS, 34, 1999, pp. S54-S57

Authors: Oh, MS Woo, DH Koh, EH Yahng, JS Kim, SH Kim, YD
Citation: Ms. Oh et al., X-ray scattering studies on the strained InGaAs InP and InGaAsP InP multi-quantum wells, J KOR PHYS, 34, 1999, pp. S464-S467

Authors: Hohng, SC Khang, DW Ahn, YH Lee, JY Kihm, SY Kim, DH Kim, WS Woo, JC Kim, DS Citrin, DS Woo, DH Kim, EK Kim, SH Lim, KS
Citation: Sc. Hohng et al., Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAslAl(x)Ga(1-x)As and InGaP2/AlxGa1-xAs heterostructures, PHYS REV B, 60(12), 1999, pp. 8883-8889

Authors: Han, SJ Yang, MC Hwang, CH Woo, DH Hahn, JR Kang, H Chung, Y
Citation: Sj. Han et al., Vacuum ultraviolet photoionization and photodissociation of ferrocene, INT J MASS, 181, 1998, pp. 59-66
Risultati: 1-16 |