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Results: 1-9 |
Results: 9
High current, common-base GaN/AlGaN heterojunction bipolar transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High current, common-base GaN/AlGaN heterojunction bipolar transistors, EL SOLID ST, 3(3), 2000, pp. 144-146
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures, SOL ST ELEC, 44(7), 2000, pp. 1255-1259
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures, SOL ST ELEC, 44(7), 2000, pp. 1261-1265
GaNPN junction issues and developments
Authors: Hickman, R Van Hove, JM Chow, PP Klaassen, JJ Wowchak, AM Polley, CJ King, DJ Ren, F Abernathy, CR Pearton, SJ Jung, KB Cho, H La Roche, JR
Citation: R. Hickman et al., GaNPN junction issues and developments, SOL ST ELEC, 44(2), 2000, pp. 377-381
Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry
Authors: Yan, CH Yao, H Van Hove, JM Wowchak, AM Chow, PP Zavada, JM
Citation: Ch. Yan et al., Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry, J APPL PHYS, 88(6), 2000, pp. 3463-3469
Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers
Authors: Kordos, P Morvic, M Betko, J Van Hove, JM Wowchak, AM Chow, PP
Citation: P. Kordos et al., Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers, J APPL PHYS, 88(10), 2000, pp. 5821-5826
Conductivity and Hall-effect in highly resistive GaN layers
Authors: Kordos, P Javorka, P Morvic, M Betko, J Van Hove, JM Wowchak, AM Chow, PP
Citation: P. Kordos et al., Conductivity and Hall-effect in highly resistive GaN layers, APPL PHYS L, 76(25), 2000, pp. 3762-3764
A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts
Authors: Fung, AK Borton, JE Nathan, MI Van Hove, JM Hickman, R Chow, PP Wowchak, AM
Citation: Ak. Fung et al., A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts, J ELEC MAT, 28(5), 1999, pp. 572-579
MBE grown AlGaN GaN MODFETs with high breakdown voltage
Authors: Vescan, A Dietrich, R Wieszt, A Tobler, H Leier, H Van Hove, JM Chow, PP Wowchak, AM
Citation: A. Vescan et al., MBE grown AlGaN GaN MODFETs with high breakdown voltage, J CRYST GR, 202, 1999, pp. 327-331
Risultati: 1-9 |