AAAAAA

   
Results: 1-18 |
Results: 18
ATTENUATOR INTEGRATED WAVE-GUIDE PHOTODETECTORS (AIPD) WITH VARIABLE SENSITIVITY RANGE OF 11DB
Authors: YOKOUCHI N YOSHIDA J YAMANAKA N YAMAGUCHI T NISHIKATA K
Citation: N. Yokouchi et al., ATTENUATOR INTEGRATED WAVE-GUIDE PHOTODETECTORS (AIPD) WITH VARIABLE SENSITIVITY RANGE OF 11DB, IEEE photonics technology letters, 10(6), 1998, pp. 863-865
CONTINUOUS-WAVE OPERATION UP TO 36-DEGREES-C OF 1.3-MU-M GAINASP-INP VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: UCHIYAMA S YOKOUCHI N NINOMIYA T
Citation: S. Uchiyama et al., CONTINUOUS-WAVE OPERATION UP TO 36-DEGREES-C OF 1.3-MU-M GAINASP-INP VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 9(2), 1997, pp. 141-142
TENSILE-STRAINED GAINASP-INP QUANTUM-WELL LASERS EMITTING AT 1.3-MU-M
Authors: YOKOUCHI N YAMANAKA N IWAI N NAKAHIRA Y KASUKAWA A
Citation: N. Yokouchi et al., TENSILE-STRAINED GAINASP-INP QUANTUM-WELL LASERS EMITTING AT 1.3-MU-M, IEEE journal of quantum electronics, 32(12), 1996, pp. 2148-2155
ESTIMATION OF WAVE-GUIDE LOSS OF 1.3-MU-M INTEGRATED TAPERED MQW FABRICATED BY SELECTIVE-AREA MOCVD
Authors: KASUKAWA A IWAI N YAMANAKA N NAKAHIRA Y YOKOUCHI N
Citation: A. Kasukawa et al., ESTIMATION OF WAVE-GUIDE LOSS OF 1.3-MU-M INTEGRATED TAPERED MQW FABRICATED BY SELECTIVE-AREA MOCVD, Electronics Letters, 32(14), 1996, pp. 1294-1296
STRUCTURAL DEPENDENCE OF 1.3-MU-M NARROW BEAM LASERS FABRICATED BY SELECTIVE MOCVD
Authors: KASUKAWA A YAMANAKA N IWAI N NAKAHIRA Y YOKOUCHI N
Citation: A. Kasukawa et al., STRUCTURAL DEPENDENCE OF 1.3-MU-M NARROW BEAM LASERS FABRICATED BY SELECTIVE MOCVD, Electronics Letters, 32(14), 1996, pp. 1304-1305
LOW-THRESHOLD ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.3-MU-M GAINASP INP STRAINED-LAYER MULTIQUANTUM-WELL SURFACE-EMITTING LASER/
Authors: UCHIYAMA S YOKOUCHI N NINOMIYA T
Citation: S. Uchiyama et al., LOW-THRESHOLD ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.3-MU-M GAINASP INP STRAINED-LAYER MULTIQUANTUM-WELL SURFACE-EMITTING LASER/, Electronics Letters, 32(11), 1996, pp. 1011-1013
REFRACTIVE-INDEX VARIATION IN GAINASP INP QUANTUM-CONFINED STRUCTURESGROWN BY CHEMICAL BEAM EPITAXY/
Authors: KURITA Y YOKOUCHI N MIYAMOTO T KOYAMA F IGA K
Citation: Y. Kurita et al., REFRACTIVE-INDEX VARIATION IN GAINASP INP QUANTUM-CONFINED STRUCTURESGROWN BY CHEMICAL BEAM EPITAXY/, JPN J A P 1, 34(10), 1995, pp. 5626-5627
INASP INGAP ALL-TERNARY STRAIN-COMPENSATED MULTIPLE-QUANTUM WELLS ANDTHEIR APPLICATION TO LONG-WAVELENGTH LASERS/
Authors: KASUKAWA A YOKOUCHI N YAMANAKA N IWAI N MATSUDA T
Citation: A. Kasukawa et al., INASP INGAP ALL-TERNARY STRAIN-COMPENSATED MULTIPLE-QUANTUM WELLS ANDTHEIR APPLICATION TO LONG-WAVELENGTH LASERS/, JPN J A P 2, 34(8A), 1995, pp. 965-967
VERY HIGH CHARACTERISTIC TEMPERATURE AND CONSTANT DIFFERENTIAL QUANTUM EFFICIENCY 1.3-MU-M GAINASP-INP STRAINED-LAYER QUANTUM-WELL LASERS BY USE OF TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR
Authors: KASUKAWA A IWAI N YAMANAKA N YOKOUCHI N
Citation: A. Kasukawa et al., VERY HIGH CHARACTERISTIC TEMPERATURE AND CONSTANT DIFFERENTIAL QUANTUM EFFICIENCY 1.3-MU-M GAINASP-INP STRAINED-LAYER QUANTUM-WELL LASERS BY USE OF TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 293-300
GAXIN1-XASYP1-Y-INP TENSILE-STRAINED QUANTUM-WELLS FOR 1.3-MU-M LOW-THRESHOLD LASERS
Authors: YOKOUCHI N YAMANAKA N IWAI N
Citation: N. Yokouchi et al., GAXIN1-XASYP1-Y-INP TENSILE-STRAINED QUANTUM-WELLS FOR 1.3-MU-M LOW-THRESHOLD LASERS, IEEE photonics technology letters, 7(8), 1995, pp. 842-844
GAIN MEASUREMENT OF HIGH CHARACTERISTIC TEMPERATURE 1.3-MU-M GAINASP INP STRAINED-LAYER QUANTUM-WELL LASERS WITH TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR/
Authors: KASUKAWA A IWAI N YAMANAKA N YOKOUCHI N
Citation: A. Kasukawa et al., GAIN MEASUREMENT OF HIGH CHARACTERISTIC TEMPERATURE 1.3-MU-M GAINASP INP STRAINED-LAYER QUANTUM-WELL LASERS WITH TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR/, Electronics Letters, 31(8), 1995, pp. 644-645
OUTPUT BEAM CHARACTERISTICS OF 1.3-MU-M GAINASP INP SL-QW LASERS WITHNARROW AND CIRCULAR OUTPUT BEAM/
Authors: KASUKAWA A IWAI N YAMANAKA N YOKOUCHI N
Citation: A. Kasukawa et al., OUTPUT BEAM CHARACTERISTICS OF 1.3-MU-M GAINASP INP SL-QW LASERS WITHNARROW AND CIRCULAR OUTPUT BEAM/, Electronics Letters, 31(7), 1995, pp. 559-560
VERY-LOW THRESHOLD CURRENT-DENSITY 1.3-MU-M INASP INP/INGAP/INP/GAINASP STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS/
Authors: KASUKAWA A YOKOUCHI N YAMANAKA N IWAI N
Citation: A. Kasukawa et al., VERY-LOW THRESHOLD CURRENT-DENSITY 1.3-MU-M INASP INP/INGAP/INP/GAINASP STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS/, Electronics Letters, 31(20), 1995, pp. 1749-1750
LOW-THRESHOLD 1.3-MU-M-GAINASP INP TENSILE-STRAINED SINGLE-QUANTUM-WELL LASERS GROWN BY LOW-PRESSURE MOCVD/
Authors: YOKOUCHI N YAMANAKA N IWAI N KASUKAWA A
Citation: N. Yokouchi et al., LOW-THRESHOLD 1.3-MU-M-GAINASP INP TENSILE-STRAINED SINGLE-QUANTUM-WELL LASERS GROWN BY LOW-PRESSURE MOCVD/, Electronics Letters, 31(2), 1995, pp. 104-105
SURFACE-EMITTING LASERS GROWN BY CHEMICAL BEAM EPITAXY
Authors: MIYAMOTO T UCHIDA T YOKOUCHI N IGA K
Citation: T. Miyamoto et al., SURFACE-EMITTING LASERS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 210-215
GROWTH OF GAINAS(P) INP MULTIQUANTUM BARRIER BY CHEMICAL BEAM EPITAXY/
Authors: INABA Y UCHIDA T YOKOUCHI N MIYAMOTO T MORI K KOYAMA F IGA K
Citation: Y. Inaba et al., GROWTH OF GAINAS(P) INP MULTIQUANTUM BARRIER BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 297-301
COMPOSITION CHANGES IN GAXIN1-XAS INP SUPERLATTICE GROWTH BY CHEMICALBEAM EPITAXY/
Authors: YOKOUCHI N INABA Y UCHIDA T MIYAMOTO T MORI K KOYAMA F IGA K
Citation: N. Yokouchi et al., COMPOSITION CHANGES IN GAXIN1-XAS INP SUPERLATTICE GROWTH BY CHEMICALBEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 302-305
CBE GROWN 1.5-MU-M GAINASP-INP SURFACE-EMITTING LASERS
Authors: UCHIDA T MIYAMOTO T YOKOUCHI N INABA Y KOYAMA F IGA K
Citation: T. Uchida et al., CBE GROWN 1.5-MU-M GAINASP-INP SURFACE-EMITTING LASERS, IEEE journal of quantum electronics, 29(6), 1993, pp. 1975-1980
Risultati: 1-18 |