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Results: 1-11 |
Results: 11
FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING
Authors: HAN LK YOON GW KIM J YAN J KWONG DL
Citation: Lk. Han et al., FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING, IEEE electron device letters, 16(8), 1995, pp. 348-350
HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT
Authors: HAN LK KIM J YOON GW YAN J KWONG DL
Citation: Lk. Han et al., HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT, Electronics Letters, 31(14), 1995, pp. 1196-1198
FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT
Authors: YOON GW LO GQ KIM J HAN LK KWONG DL
Citation: Gw. Yoon et al., FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT, IEEE electron device letters, 15(8), 1994, pp. 266-268
EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS
Authors: HAN LK YOON GW KWONG DL MATHEWS VK FAZAN PC
Citation: Lk. Han et al., EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS, IEEE electron device letters, 15(8), 1994, pp. 280-282
MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES
Authors: BHAT M KIM J YAN J YOON GW HAN LK KWONG DL
Citation: M. Bhat et al., MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES, IEEE electron device letters, 15(10), 1994, pp. 421-423
APPLICATIONS OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY TOULSI MATERIAL PROCESSING AND DEVICE FABRICATION
Authors: SNNIKRISHNAN U YOON GW KWONG DL
Citation: U. Snnikrishnan et al., APPLICATIONS OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY TOULSI MATERIAL PROCESSING AND DEVICE FABRICATION, Thin solid films, 241(1-2), 1994, pp. 329-334
EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS
Authors: YOON GW JOSHI AB KWONG DL MATHEWS VK THAKUR RPS FAZAN PC
Citation: Gw. Yoon et al., EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 347-351
EFFECTS OF NH3 NITRIDATION ON OXIDES GROWN IN PURE N2O AMBIENT
Authors: BHAT M YOON GW KIM J KWONG DL ARENDT M WHITE JM
Citation: M. Bhat et al., EFFECTS OF NH3 NITRIDATION ON OXIDES GROWN IN PURE N2O AMBIENT, Applied physics letters, 64(16), 1994, pp. 2116-2118
HIGH-FIELD-INDUCED LEAKAGE IN ULTRATHIN N2O OXIDES
Authors: YOON GW JOSHI AB KIM J KWONG DL
Citation: Gw. Yoon et al., HIGH-FIELD-INDUCED LEAKAGE IN ULTRATHIN N2O OXIDES, IEEE electron device letters, 14(5), 1993, pp. 231-233
EFFECTS OF RESIDUAL SURFACE NITROGEN ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF REGROWN OXIDES
Authors: KIM J JOSHI AB YOON GW KWONG DL
Citation: J. Kim et al., EFFECTS OF RESIDUAL SURFACE NITROGEN ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF REGROWN OXIDES, IEEE electron device letters, 14(5), 1993, pp. 265-267
HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT
Authors: JOSHI AB YOON GW KIM JH LO GQ KWONG DL
Citation: Ab. Joshi et al., HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1437-1445
Risultati: 1-11 |