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Results: 1-18 |
Results: 18
INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS
Authors: WAKAYA F MATSUBARA T NAKAYAMA M YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2313-2316
PERFORMANCE COMPARISON OF 2 RETRANSMISSION CONTROL SCHEMES FOR SLOW-FREQUENCY-HOPPED COMMUNICATION-SYSTEMS
Authors: SAKAKIBARA K MOTONAGA K YUBA Y
Citation: K. Sakakibara et al., PERFORMANCE COMPARISON OF 2 RETRANSMISSION CONTROL SCHEMES FOR SLOW-FREQUENCY-HOPPED COMMUNICATION-SYSTEMS, IEICE transactions on fundamentals of electronics, communications and computer science, E81A(11), 1998, pp. 2346-2349
ON THE STABILITY OF 5 TYPES OF SLOTTED ALOHA SYSTEMS WITH CAPTURE ANDMULTIPLE PACKET RECEPTION
Authors: SAKAKIBARA K HANAOKA M YUBA Y
Citation: K. Sakakibara et al., ON THE STABILITY OF 5 TYPES OF SLOTTED ALOHA SYSTEMS WITH CAPTURE ANDMULTIPLE PACKET RECEPTION, IEICE transactions on fundamentals of electronics, communications and computer science, E81A(10), 1998, pp. 2092-2100
EFFECTS OF GROWTH INTERRUPTION IN IN-SITU PROCESS FOR BURIED QUANTUM STRUCTURES
Authors: WAKAYA F MATSUBARA T NAKAYAMA M YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., EFFECTS OF GROWTH INTERRUPTION IN IN-SITU PROCESS FOR BURIED QUANTUM STRUCTURES, Microelectronic engineering, 42, 1998, pp. 591-594
CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM
Authors: YANAGISAWA J NAKAYAMA H OKA K NAKAI M WAKAYA F YUBA Y TAKAOKA S MURASE K GAMO K
Citation: J. Yanagisawa et al., CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2930-2933
FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS
Authors: WAKAYA F YANAGISAWA J MATSUBARA T NAKAYAMA H YUBA Y TAKAOKA S GAMO K
Citation: F. Wakaya et al., FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS, Microelectronic engineering, 35(1-4), 1997, pp. 451-454
FABRICATION OF LATERALLY SELECTED SI DOPED LAYER IN GAAS USING A LOW-ENERGY FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM
Authors: YANAGISAWA J NAKAYAMA H WAKAYA F YUBA Y GAMO K
Citation: J. Yanagisawa et al., FABRICATION OF LATERALLY SELECTED SI DOPED LAYER IN GAAS USING A LOW-ENERGY FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3938-3941
EFFECTS OF GROWTH INTERRUPTION AND FIB IMPLANTATION IN THE UHV TOTAL VACUUM PROCESS FOR THE BURIED MESOSCOPIC STRUCTURES
Authors: WAKAYA F MATSUBARA T NAKAYAMA H YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., EFFECTS OF GROWTH INTERRUPTION AND FIB IMPLANTATION IN THE UHV TOTAL VACUUM PROCESS FOR THE BURIED MESOSCOPIC STRUCTURES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 268-270
ON THE UNEQUAL ERROR PROTECTION CAPABILITY OF A Q-ARY IMAGE OF A LOW-RATE Q(M)-ARY CYCLIC CODE
Authors: SAKAKIBARA K KASAHARA M YUBA Y
Citation: K. Sakakibara et al., ON THE UNEQUAL ERROR PROTECTION CAPABILITY OF A Q-ARY IMAGE OF A LOW-RATE Q(M)-ARY CYCLIC CODE, IEICE transactions on fundamentals of electronics, communications and computer science, E79A(9), 1996, pp. 1305-1312
SOME OPTICAL AND QUASI-OPTIMAL BINARY-CODES FROM CYCLIC CODES OVER GF(2(M))
Authors: SAKAKIBARA K KASAHARA M YUBA Y
Citation: K. Sakakibara et al., SOME OPTICAL AND QUASI-OPTIMAL BINARY-CODES FROM CYCLIC CODES OVER GF(2(M)), IEICE transactions on fundamentals of electronics, communications and computer science, E79A(10), 1996, pp. 1737-1738
INVESTIGATION OF GROWTH INTERRUPTION IN THE UHV TOTAL VACUUM PROCESS FOR BURIED QUANTUM STRUCTURES
Authors: WAKAYA F MATSUBARA T YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., INVESTIGATION OF GROWTH INTERRUPTION IN THE UHV TOTAL VACUUM PROCESS FOR BURIED QUANTUM STRUCTURES, Microelectronic engineering, 30(1-4), 1996, pp. 475-478
TRANSPORT-PROPERTIES AND FABRICATION OF COUPLED ELECTRON WAVE-GUIDES
Authors: WAKAYA F OTOI H YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K HASKO DG JONES GAC AHMED H
Citation: F. Wakaya et al., TRANSPORT-PROPERTIES AND FABRICATION OF COUPLED ELECTRON WAVE-GUIDES, JPN J A P 1, 34(8B), 1995, pp. 4446-4448
MASKLESS DEPOSITION OF AU ON GAAS BY LOW-ENERGY FOCUSED ION-BEAM
Authors: KITO K YANAGISAWA J MONDEN K NAKAYAMA H YUBA Y GAMO K
Citation: K. Kito et al., MASKLESS DEPOSITION OF AU ON GAAS BY LOW-ENERGY FOCUSED ION-BEAM, JPN J A P 1, 34(12B), 1995, pp. 6853-6856
INVESTIGATION OF IN-SITU PROCESS FOR GAAS ALGAAS BURIED QUANTUM WIRES/
Authors: WAKAYA F UMEDA K YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., INVESTIGATION OF IN-SITU PROCESS FOR GAAS ALGAAS BURIED QUANTUM WIRES/, JPN J A P 1, 33(12B), 1994, pp. 7223-7227
EFFECTS OF THE BEIGE MUTATION ON RESPIRATORY-TRACT INFECTION WITH PSEUDOMONAS-AERUGINOSA IN MICE
Authors: TANAKA E YUBA Y SATO A KUZE F
Citation: E. Tanaka et al., EFFECTS OF THE BEIGE MUTATION ON RESPIRATORY-TRACT INFECTION WITH PSEUDOMONAS-AERUGINOSA IN MICE, Experimental lung research, 20(4), 1994, pp. 351-366
LOW-ENERGY FOCUSED ION-BEAM AND BURIED ELECTRON WAVE-GUIDES FABRICATION
Authors: WAKAYA F NOZAWA A YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., LOW-ENERGY FOCUSED ION-BEAM AND BURIED ELECTRON WAVE-GUIDES FABRICATION, Microelectronic engineering, 23(1-4), 1994, pp. 123-126
TRANSPORT-PROPERTIES OF COUPLED ELECTRON WAVE-GUIDES BURIED IN HETEROSTRUCTURE
Authors: WAKAYA F YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., TRANSPORT-PROPERTIES OF COUPLED ELECTRON WAVE-GUIDES BURIED IN HETEROSTRUCTURE, JPN J A P 1, 32(12B), 1993, pp. 6242-6245
NEAR-SURFACE DEFECTS FORMED BY MEV ION-IMPLANTATION INTO SILICON
Authors: SAYAMA H KINOMURA A YUBA Y TAKAI M
Citation: H. Sayama et al., NEAR-SURFACE DEFECTS FORMED BY MEV ION-IMPLANTATION INTO SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 587-590
Risultati: 1-18 |