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Citation: Yc. Zhang et al., Structure and photoluminescence of InGaAs quantum dots formed on an InAlAswetting layer, CHIN PHYS L, 18(10), 2001, pp. 1411-1414
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Ye, XL
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Citation: Xl. Ye et al., Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices - art. no. 115317, PHYS REV B, 6311(11), 2001, pp. 5317
Authors:
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Citation: Hy. Liu et al., Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots, J APPL PHYS, 90(4), 2001, pp. 2048-2050
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Ye, XL
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Citation: Xl. Ye et al., In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells, J APPL PHYS, 90(3), 2001, pp. 1266-1270
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Citation: Yf. Li et al., InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy, J APPL PHYS, 89(7), 2001, pp. 4186-4188
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Citation: Jt. He et al., Electron impact fragmentation mechanisms of some cyclic esters with helical structures, RAP C MASS, 14(24), 2000, pp. 2357-2361
Citation: Xl. Ye et al., The effects of surfactants on the activity of invertase and superoxide dismutase of soybean leaf in vitro and in vivo, COLL SURF A, 175(1-2), 2000, pp. 249-255
Authors:
Li, YF
Ye, XL
Liu, FQ
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Citation: Yf. Li et al., Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates, APPL SURF S, 167(3-4), 2000, pp. 191-196
Citation: Ww. Pei et al., Stereoselective synthesis of 2-aryltetrahydrofuran-3,4-dicarboxylate derivatives: Efficient approach to tetrahydrofuran lignans, SYNTHESIS-S, (14), 2000, pp. 2069-2077
Citation: Sh. Tung et al., The microtubular cytoskeleton during megasporogenesis in the Nun orchid, Phaius tankervilliae, NEW PHYTOL, 146(3), 2000, pp. 503-513
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Zhang, YC
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Citation: Yc. Zhang et al., Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots, J CRYST GR, 219(3), 2000, pp. 199-204
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Li, YF
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Citation: Yf. Li et al., Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate, J CRYST GR, 219(1-2), 2000, pp. 17-21
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Li, YF
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Citation: Yf. Li et al., Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy, J CRYST GR, 218(2-4), 2000, pp. 451-454
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Jiang, WH
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Citation: Wh. Jiang et al., Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy, J CRYST GR, 212(1-2), 2000, pp. 356-359
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Citation: Zz. Sun et al., The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate, J CRYST GR, 212(1-2), 2000, pp. 360-363
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Liu, HY
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Li, YF
Sun, ZZ
Zhang, JF
Liang, JB
Wang, ZG
Citation: Hy. Liu et al., Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers, J CRYST GR, 210(4), 2000, pp. 451-457
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Liu, HY
Wang, XD
Wu, J
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Lin, F
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Liang, JB
Wang, ZG
Citation: Hy. Liu et al., Structural and optical properties of self-assembled InAs/GaAs quantum dotscovered by InxGa1-xAs (0 <= x <= 0.3), J APPL PHYS, 88(6), 2000, pp. 3392-3395
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Sun, S
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Chen, YH
Ye, XL
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Xu, B
Wang, ZG
Citation: S. Sun et al., Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate, J APPL PHYS, 88(1), 2000, pp. 533-536