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Results: 1-18 |
Results: 18

Authors: He, JH Ling, GP Ye, ZZ
Citation: Jh. He et al., Magnetic properties of hexagonal YbCu5-xAlx - Crossover from intermediate valence to trivalence of Yb ion, J ALLOY COM, 325(1-2), 2001, pp. 54-58

Authors: Huang, JY Ye, ZZ Qi, ZL Que, D
Citation: Jy. Huang et al., The growth of Si1-x-yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition, J MAT SCI L, 20(12), 2001, pp. 1173-1175

Authors: Huang, YP Zhu, SY Li, AZ Wang, J Huang, JY Ye, ZZ
Citation: Yp. Huang et al., Epitaxial growth of high-quality silicon films on double-layer porous silicon, CHIN PHYS L, 18(11), 2001, pp. 1507-1509

Authors: Huang, JY Ye, ZZ Zhao, BH Ma, XY Wang, YD Que, DL
Citation: Jy. Huang et al., Photoluminescence of Ge quantum dots prepared on porous silicon by ultrahigh vacuum chemical vapor deposition, APPL PHYS L, 78(13), 2001, pp. 1858-1860

Authors: Zhang, HX Ye, ZZ Zhao, BH Liu, HX
Citation: Hx. Zhang et al., X-ray diffraction, photoluminescence and secondary ion mass spectroscopy study of GaN films grown on Si(111) substrate by vacuum reactive evaporation, SEMIC SCI T, 15(7), 2000, pp. 649-652

Authors: Zhang, HX Ye, ZZ Zhao, BH
Citation: Hx. Zhang et al., An investigation on the epitaxial growth of GaN film on Si(111) substrate, J MAT SCI L, 19(6), 2000, pp. 529-531

Authors: Ye, ZZ Rodriguez, R Tran, A Hoang, H de los Santos, D Brown, S Vellanoweth, RL
Citation: Zz. Ye et al., The developmental transition to flowering represses ascorbate peroxidase activity and induces enzymatic lipid peroxidation in leaf tissue in Arabidopsis thaliana, PLANT SCI, 158(1-2), 2000, pp. 115-127

Authors: Zhang, HX Ye, ZZ Zhao, BH
Citation: Hx. Zhang et al., Hexagonal GaN epitaxial growth on Si(111) by a vacuum reaction method, PHYS ST S-A, 177(2), 2000, pp. 485-493

Authors: Tan, WY Ye, ZZ
Citation: Wy. Tan et Zz. Ye, Estimation of HIV infection and incubation via state space models, MATH BIOSCI, 167(1), 2000, pp. 31-50

Authors: Liu, HX Ye, ZZ Zhang, HX Zhao, BH
Citation: Hx. Liu et al., Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer, MATER RES B, 35(11), 2000, pp. 1837-1842

Authors: Zhang, HX Ye, ZZ Zhao, BH
Citation: Hx. Zhang et al., Investigation of preparation and properties of epitaxial growth GaN film on Si(111) substrate, J CRYST GR, 210(4), 2000, pp. 511-515

Authors: Zhang, HX Ye, ZZ Zhao, BH
Citation: Hx. Zhang et al., Epitaxial growth of wurtzite GaN on Si(111) by a vacuum reactive evaporation, J APPL PHYS, 87(6), 2000, pp. 2830-2834

Authors: Zhang, HX Lu, HM Ye, ZZ Zhao, BH Wang, L Que, DL
Citation: Hx. Zhang et al., Secondary ion mass spectroscopy and photoluminescence investigations on the GaN epilayer grown on Si substrate, ACT PHY C E, 48(7), 1999, pp. 1315-1319

Authors: Steen, RG Langston, JW Ogg, RJ Xiong, XP Ye, ZZ Wang, WC
Citation: Rg. Steen et al., Diffuse t(1) reduction in gray matter of sickle cell disease patients: Evidence of selective vulnerability to damage?, MAGN RES IM, 17(4), 1999, pp. 503-515

Authors: Ye, ZZ Zhang, HX Lu, HM Zhao, BH
Citation: Zz. Ye et al., Structural and photoluminescence characterization of GaN film grown on Si (111) substrate, CHIN PHYS L, 16(4), 1999, pp. 293-294

Authors: Qi, Z Huang, JY Ye, ZZ Lu, HM Chen, WH Zhao, BH Wang, L
Citation: Z. Qi et al., Growth and characterization of high quality Si1-x-yGexCy alloy grown by ultra-high vacuum chemical vapor deposition, CHIN PHYS L, 16(10), 1999, pp. 750-752

Authors: Huang, JY Ye, ZZ Chen, WH Qi, Z Lu, HM Lei, W Zhao, BH Que, DL
Citation: Jy. Huang et al., The growth and investigation of SiGe films on buried Ge islands, J CRYST GR, 206(4), 1999, pp. 294-298

Authors: Jiang, YH Yue, WZ Ye, ZZ
Citation: Yh. Jiang et al., Oncolites of the Lower Permian Chuanshan Formation in South China and their geological and economic significance, ACT GEO S-E, 72(4), 1998, pp. 441-454
Risultati: 1-18 |