Authors: Lu, Q Yeo, YC Yang, KJ Lin, R Polishchuk, I King, TJ Hu, CM Song, SC Luan, HF Kwong, DL Guo, X Luo, ZJ Wang, XW Ma, TP

Citation: Q. Lu et al., Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric, IEEE ELEC D, 22(7), 2001, pp. 324-326

Authors: Yeo, YC Lu, Q Ranade, P Takeuchi, H Yang, KJ Polishchuk, I King, TJ Hu, C Song, SC Luan, HF Kwong, DL

Citation: Yc. Yeo et al., Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric, IEEE ELEC D, 22(5), 2001, pp. 227-229

Authors: Yeo, YC Subramanian, V Kedzierski, J King, TJ Bokor, J Hu, CM Xuan, PQ

Citation: Yc. Yeo et al., Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel, IEEE ELEC D, 21(4), 2000, pp. 161-163

Authors: Yeo, YC Lu, Q Lee, WC King, TJ Hu, CM Wang, XW Guo, X Ma, TP

Citation: Yc. Yeo et al., Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric, IEEE ELEC D, 21(11), 2000, pp. 540-542

Authors: Tay, BK Sheeja, D Lau, SP Shi, X Seet, BC Yeo, YC

Citation: Bk. Tay et al., Time and temperature-dependent changes in the structural properties of tetrahedral amorphous carbon films, SURF COAT, 130(2-3), 2000, pp. 248-251