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Results: 1-25/44
Authors:
KOHLER R
PFEIFFER JU
RAIDT H
NEUMANN W
ZAUMSEIL P
RICHTER U
Citation: R. Kohler et al., NUCLEATION, GLIDE VELOCITY AND BLOCKING OF MISFIT DISLOCATIONS IN SIGE SI/, Crystal research and technology, 33(4), 1998, pp. 593-604
Authors:
ZAUMSEIL P
Citation: P. Zaumseil, HIGH-RESOLUTION DETERMINATION OF THE GE DEPTH PROFILE IN SIGE HETEROBIPOLAR TRANSISTOR STRUCTURES BY X-RAY-DIFFRACTOMETRY, Physica status solidi. a, Applied research, 165(1), 1998, pp. 195-204
Authors:
RAZ T
EDELMAN F
KOMEM Y
STOLZER M
ZAUMSEIL P
Citation: T. Raz et al., TRANSPORT-PROPERTIES OF BORON-DOPED CRYSTALLIZED AMORPHOUS SI1-XGEX FILMS, Journal of applied physics, 84(8), 1998, pp. 4343-4350
Authors:
ZAUMSEIL P
Citation: P. Zaumseil, CHARACTERIZATION OF SIGE HBT-STRUCTURES BY DOUBLE-CRYSTAL AND TRIPLE-CRYSTAL DIFFRACTOMETRY, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 361-367
Authors:
OSTEN HJ
KIM M
LIPPERT G
ZAUMSEIL P
Citation: Hj. Osten et al., TERNARY SIGEC ALLOYS - GROWTH AND PROPERTIES OF A NEW SEMICONDUCTING MATERIAL, Thin solid films, 294(1-2), 1997, pp. 93-97
Authors:
PRESSEL K
FISCHER GG
ZAUMSEIL P
KIM M
OSTEN HJ
Citation: K. Pressel et al., INFRARED-SPECTROSCOPY OF STRAINED SI1-YCY ALLOYS SS-THAN-OR-EQUAL-TO-Y-LESS-THAN-OR-EQUAL-TO-0.015) GROWN ON SILICON, Thin solid films, 294(1-2), 1997, pp. 133-136
Authors:
FISCHER GG
ZAUMSEIL P
Citation: Gg. Fischer et P. Zaumseil, SIMULATION OF THE PROCESS OF STRAIN RELAXATION IN SI1-XGEX SI(100) HETEROSTRUCTURES/, Physica status solidi. a, Applied research, 164(2), 1997, pp. 767-778
Authors:
NIKULIN AY
ZAUMSEIL P
Citation: Ay. Nikulin et P. Zaumseil, MODEL-INDEPENDENT DETERMINATION OF CRYSTAL-LATTICE STRAINS IN EPITAXIALLY GROWN LAYERS IN THE CASE OF INCOMPLETE EXPERIMENTAL-DATA, Physica status solidi. a, Applied research, 163(2), 1997, pp. 305-312
Authors:
NIKULIN AY
ZAUMSEIL P
PETRASHEN PV
Citation: Ay. Nikulin et al., THE CHARACTERIZATION OF SIGE SI MULTILAYERS VIA AN UNAMBIGUOUS SOLUTION OF THE INVERSE PROBLEM IN X-RAY BRAGG-DIFFRACTION/, Journal of physics. D, Applied physics, 30(17), 1997, pp. 2373-2378
Authors:
LIPPERT G
ZAUMSEIL P
OSTEN HJ
KIM M
Citation: G. Lippert et al., ENHANCEMENT OF SUBSTITUTIONAL CARBON INCORPORATION IN HYDROGEN-MEDIATED PSEUDOMORPHIC GROWTH OF STRAINED ALLOY LAYERS ON SI(001), Journal of crystal growth, 175, 1997, pp. 473-476
Authors:
BHAGAVANNARAYANA G
ZAUMSEIL P
Citation: G. Bhagavannarayana et P. Zaumseil, DIFFUSE-X-RAY SCATTERING OF MISFIT DISLOCATIONS AT SI1-XGEX SI INTERFACES BY TRIPLE-CRYSTAL DIFFRACTOMETRY/, Journal of applied physics, 82(3), 1997, pp. 1172-1177
Authors:
OSTEN HJ
BUGIEL E
ZAUMSEIL P
Citation: Hj. Osten et al., SELF-ORGANIZATION DURING SI1-YCY ALLOY LAYER GROWTH ON SI(001) USING HOMOGENEOUS COEVAPORATION, Journal of applied physics, 82(1), 1997, pp. 231-235
Authors:
ZAUMSEIL P
FISCHER GG
BRUNNER K
EBERL K
Citation: P. Zaumseil et al., COMPARISON OF THE THERMAL-STABILITY OF SI0.603GE0.397 SI AND SI0.597GE0.391C0.012/SI SUPERLATTICE STRUCTURES/, Journal of applied physics, 81(9), 1997, pp. 6134-6140
Authors:
ZAUMSEIL P
KAR S
Citation: P. Zaumseil et S. Kar, NOVEL FEATURES IN THE STRAIN PROFILE AND GATE OXIDE CAPACITANCE OF THROUGH-GATE-OXIDE IMPLANTED STRUCTURES, Applied physics letters, 71(21), 1997, pp. 3102-3104
Authors:
KUHNE H
FISCHER A
MORGENSTERN T
ZAUMSEIL P
Citation: H. Kuhne et al., ADSORPTION CONTROLLED SI((1-X))GE-X GROWTH DURING CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2282-2288
Authors:
OSTEN HJ
ENDISCH D
BUGIEL E
DIETRICH B
FISCHER GG
KIM M
KRUGER D
ZAUMSEIL P
Citation: Hj. Osten et al., STRAIN RELAXATION IN TENSILE-STRAINED SI1-YCY LAYERS ON SI(001), Semiconductor science and technology, 11(11), 1996, pp. 1678-1687
Authors:
ZAUMSEIL P
Citation: P. Zaumseil, A COMPARISON OF DIFFERENT MULTIPLE-CRYSTAL DIFFRACTOMETER ARRANGEMENTS TO MEASURE THE REFLECTION CURVE OF SIGE LAYERS ON SI SUBSTRATES, Crystal research and technology, 31(4), 1996, pp. 529-537
Authors:
NIKULIN AY
ZAUMSEIL P
Citation: Ay. Nikulin et P. Zaumseil, AN ENHANCED TECHNIQUE FOR THE CHARACTERIZATION OF CRYSTAL-LATTICE STRAINS IN EPITAXIALLY GROWN LAYERS FROM X-RAY-DIFFRACTION PROFILES, Physica status solidi. a, Applied research, 158(2), 1996, pp. 523-527
Authors:
ZOLLNER JP
EICHHORN G
CIMALLA V
BOZMAROV J
ZAUMSEIL P
KURSCHNER H
Citation: Jp. Zollner et al., SLIP GENERATION DURING RAPID THERMAL-PROCESSING, Physica status solidi. a, Applied research, 156(1), 1996, pp. 63-70
Authors:
ZAUMSEIL P
FISCHER GG
QUICK C
MISIUK A
Citation: P. Zaumseil et al., THE RELAXATION BEHAVIOR OF STRAINED SI1-XGEX LAYERS AT HIGH-TEMPERATURE UNDER HYDROSTATIC-PRESSURE, Physica status solidi. a, Applied research, 153(2), 1996, pp. 401-408
Authors:
NIKULIN AY
ZAUMSEIL P
PETRASHEN PV
Citation: Ay. Nikulin et al., UNAMBIGUOUS DETERMINATION OF CRYSTAL-LATTICE STRAINS IN EPITAXIALLY GROWN SIGE SI MULTILAYERS/, Journal of applied physics, 80(12), 1996, pp. 6683-6688
Authors:
OSTEN HJ
KIM MC
PRESSEL K
ZAUMSEIL P
Citation: Hj. Osten et al., SUBSTITUTIONAL VERSUS INTERSTITIAL CARBON INCORPORATION DURING PSEUDOMORPHIC GROWTH OF SI1-YCY ON SI(001), Journal of applied physics, 80(12), 1996, pp. 6711-6715
Authors:
TILLACK B
RITTER G
KRUGER D
ZAUMSEIL P
MORGENSTERN G
Citation: B. Tillack et al., SHARP BORON DOPING WITHIN THIN SIGE LAYER BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Materials science and technology, 11(10), 1995, pp. 1060-1064
Authors:
ENDISCH D
OSTEN HJ
ZAUMSEIL P
ZINKEALLMANG M
Citation: D. Endisch et al., BACKSCATTERING ANALYSIS OF SI1-YCY LAYERS USING THE C-12(HE-4,HE-4)C-12 RESONANCE AT 4.265 MEV, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(1), 1995, pp. 125-132
Authors:
FISCHER GG
ZAUMSEIL P
Citation: Gg. Fischer et P. Zaumseil, IN-SITU X-RAY-INVESTIGATION OF THE HIGH-TEMPERATURE BEHAVIOR OF STRAINED SI1-XGEX SI AND SI1-YCY/SI HETEROSTRUCTURES/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 109-113