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Results:
1-14
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Results: 14
Authors:
GRENZER J
SCHOMBURG E
LINGOTT I
IGNATOV AA
RENK KF
PLETSCH U
ZEIMER U
MELZER BJ
IVANOV S
SCHAPOSCHNIKOV S
KOPEV PS
PAVELEV DG
KOSCHURINOV Y
Citation: J. Grenzer et al., X-RAY CHARACTERIZATION OF AN ESAKI-TSU SUPERLATTICE AND TRANSPORT-PROPERTIES, Semiconductor science and technology, 13(7), 1998, pp. 733-738
Authors:
BUGGE F
ZEIMER U
SATO M
WEYERS M
TRANKLE G
Citation: F. Bugge et al., MOVPE GROWTH OF HIGHLY STRAINED INGAAS GAAS QUANTUM-WELLS/, Journal of crystal growth, 183(4), 1998, pp. 511-518
Authors:
DAROWSKI N
PIETSCH U
ZEIMER U
SMIRNITZKI V
BUGGE F
Citation: N. Darowski et al., X-RAY STUDY OF LATERAL STRAIN AND COMPOSITION MODULATION IN AN ALGAASOVERLAYER INDUCED BY A GAAS LATERAL SURFACE GRATING, Journal of applied physics, 84(3), 1998, pp. 1366-1370
Authors:
OSTER A
BUGGE F
GRAMLICH S
PROCOP M
ZEIMER U
WEYERS M
Citation: A. Oster et al., INTERDIFFUSION IN INGAAS GAAS AND INGAAS/GAASP QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 20-23
Authors:
RICHTER E
KURPAS P
SATO M
TRAPP M
ZEIMER U
HAHLE S
WEYERS M
Citation: E. Richter et al., HYDROGEN IN CARBON-DOPED GAAS BASE LAYER OF GAINP GAAS HETEROJUNCTIONBIPOLAR-TRANSISTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 337-340
Authors:
RECHENBERG I
KNAUER A
BUGGE F
RICHTER U
ERBERT G
VOGEL K
KLEIN A
ZEIMER U
WEYERS M
Citation: I. Rechenberg et al., CRYSTALLINE PERFECTION IN GAINASP GAAS LASER STRUCTURES WITH GAINP ORALGAAS CLADDING LAYERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 368-372
Authors:
ZEIMER U
BUGGE F
GRAMLICH S
URBAN I
OSTER A
WEYERS M
Citation: U. Zeimer et al., HIGH-RESOLUTION X-RAY-DIFFRACTION INVESTIGATION OF CRYSTAL PERFECTIONAND RELAXATION OF GAAS INGAAS/GAAS QUANTUM-WELLS DEPENDING ON MOVPE GROWTH-CONDITIONS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 369-376
Authors:
DAROWSKI N
PASCHKE K
PIETSCH U
WANG KH
FORCHEL A
BAUMBACH T
ZEIMER U
Citation: N. Darowski et al., IDENTIFICATION OF A BURIED SINGLE-QUANTUM-WELL WITHIN SURFACE STRUCTURED SEMICONDUCTORS USING DEPTH RESOLVED X-RAY GRAZING-INCIDENCE DIFFRACTION, Journal of physics. D, Applied physics, 30(16), 1997, pp. 55-59
Authors:
ROSE D
PIETSCH U
ZEIMER U
Citation: D. Rose et al., CHARACTERIZATION OF INXGA1-XAS SINGLE QUANTUM-WELLS, BURIED IN GAAS[001], BY GRAZING-INCIDENCE DIFFRACTION, Journal of applied physics, 81(6), 1997, pp. 2601-2606
Authors:
SATO M
ZEIMER U
BUGGE F
GRAMLICH S
WEYERS M
Citation: M. Sato et al., EVALUATION OF STRAINED INGAAS GAAS QUANTUM-WELLS BY ATOMIC-FORCE MICROSCOPY/, Applied physics letters, 70(9), 1997, pp. 1134-1136
Authors:
PANEPINTO L
ZEIMER U
SEIFERT W
SEIBT M
BUGGE F
WEYERS M
SCHROTER W
Citation: L. Panepinto et al., TEMPERATURE-DEPENDENT EBIC AND DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF DIFFERENT TYPES OF MISFIT-DISLOCATIONS AT MOVPE GROWN GAAS INGAAS/GAAS-SINGLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 77-81
Authors:
BUGGE F
ERBERT G
PROCOP M
RECHENBERG I
ZEIMER U
WEYERS M
Citation: F. Bugge et al., EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/, Journal of electronic materials, 25(2), 1996, pp. 309-312
Authors:
KNAUER A
ERBERT G
GRAMLICH S
OSTER A
RICHTER E
ZEIMER U
WEYERS M
Citation: A. Knauer et al., METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP GAAS/, Journal of electronic materials, 24(11), 1995, pp. 1655-1658
Authors:
RESSEL P
STRUSNY H
GRAMLICH S
ZEIMER U
SEBASTIAN J
VOGEL K
Citation: P. Ressel et al., OPTIMIZED PROTON IMPLANTATION STEP FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 29(10), 1993, pp. 918-919
Risultati:
1-14
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