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Results:
1-7
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Results: 7
Authors:
ZELENIN VV
LEBEDEV AA
STAROBINETS SM
CHELNOKOV VE
Citation: Vv. Zelenin et al., GROWTH AND INVESTIGATION OF EPITAXIAL 6H-SIC LAYERS OBTAINED BY CVD ON LELY-GROWN SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 300-303
Authors:
ZELENIN VV
SOLOVEV VG
STAROBINETS SM
KONNIKOV SG
CHELNOKOV VE
Citation: Vv. Zelenin et al., GROWTH OF EPITAXIAL-FILMS OF SIC BY CHEMICAL-VAPOR-DEPOSITION IN THE CH3SICL3-H-2 SYSTEM, Semiconductors, 29(6), 1995, pp. 581-583
Authors:
ANDREEV AN
ANIKIN MM
ZELENIN VV
IVANOV PA
LEBEDEV AA
RASTEGAEVA MG
SAVKINA NS
STRELCHUK AM
SYRKIN AL
CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
Authors:
ANDREEV AN
LEBEDEV AA
ZELENIN VV
MALTSEV AA
PASTEGAEVA MG
SAVKINA NS
SOKOLOVA TV
CHELNOKOV VE
Citation: An. Andreev et al., FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H, Pis'ma v Zurnal tehniceskoj fiziki, 21(4), 1995, pp. 60-64
Authors:
IVANOV PA
ZELENIN VV
DANISHEVSKII AM
STAROBINETS SG
CHELNOKOV VE
Citation: Pa. Ivanov et al., PROPERTIES OF SILICON-CARBIDE EPITAXIAL L AYERS GROWN BY CHEMICAL-DEPOSIT ION FROM GAS-PHASE IN METHYLTRICHLOROSILANE-HYDROGEN SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 21(3), 1995, pp. 1-9
Authors:
STRELCHUK AM
ANIKIN MM
ANDREEV AN
ZELENIN VV
LEBEDEV AA
RASTEGAEVA MG
SAVKINA NS
SYRKIN AP
CHELNOKOV VE
SHESTOPALOVA LN
Citation: Am. Strelchuk et al., CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE, Zurnal tehniceskoj fiziki, 65(8), 1995, pp. 98-103
Authors:
ANTONOV IV
GUBA SK
ZHILYAEV YV
ZELENIN VV
KULIKOV AY
Citation: Iv. Antonov et al., KINETICS OF FORMATION OF ISOTHERMAL SUPERSATURATED VAPOR-PHASE IN THESYSTEM GAAS-GAP-ASCL3-H2, Inorganic materials, 29(2), 1993, pp. 157-161
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