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Results: 1-25 | 26-50 | 51-66 |
Results: 51-66/66
GLASSY MATRIX OF PSEUDOTACHYLITE IN THE YAGAN EXTENSIONAL DETACHMENT FAULT IN THE SINO-MONGOLIAN BOUNDARY AND ITS KINEMATIC IMPLICATIONS
Authors: WANG YF ZHENG YD ZANG QJ ZHANG Q
Citation: Yf. Wang et al., GLASSY MATRIX OF PSEUDOTACHYLITE IN THE YAGAN EXTENSIONAL DETACHMENT FAULT IN THE SINO-MONGOLIAN BOUNDARY AND ITS KINEMATIC IMPLICATIONS, Chinese Science Bulletin, 39(22), 1994, pp. 1895-1899
THE OPTICALLY-ACTIVE PROCESS OF HIGHER-ORDER BANDS IN NEUTRON-IRRADIATED SILICON
Authors: SHI Y WU FM ZHENG YD SUEZAWA M IMAI M SUMINO K
Citation: Y. Shi et al., THE OPTICALLY-ACTIVE PROCESS OF HIGHER-ORDER BANDS IN NEUTRON-IRRADIATED SILICON, Journal of physics. Condensed matter, 6(41), 1994, pp. 8645-8653
SUBSTRATE-TEMPERATURE AND GE CONCENTRATION-DEPENDENCE OF THE MICROSTRUCTURE SI-GE ALLOYS
Authors: GU SL WANG RH ZHANG R QIN LH SHI Y ZHU SM ZHENG YD
Citation: Sl. Gu et al., SUBSTRATE-TEMPERATURE AND GE CONCENTRATION-DEPENDENCE OF THE MICROSTRUCTURE SI-GE ALLOYS, Journal of physics. Condensed matter, 6(31), 1994, pp. 6163-6168
HOLE TRANSPORT-PROPERTIES OF SI SI1-XGEX MODULATION-DOPED HETEROSTRUCTURES/
Authors: JIANG RL LIU JL ZHENG YD LI HF ZHENG HZ
Citation: Rl. Jiang et al., HOLE TRANSPORT-PROPERTIES OF SI SI1-XGEX MODULATION-DOPED HETEROSTRUCTURES/, Superlattices and microstructures, 16(4), 1994, pp. 375-377
ELLIPSOMETRIC STUDIES OF POROUS SILICON
Authors: QIN LH ZHENG YD ZHANG R GU SL SHI HT FENG D
Citation: Lh. Qin et al., ELLIPSOMETRIC STUDIES OF POROUS SILICON, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 163-165
HIGH HOLE MOBILITY SI SI1-XGEX/SI HETEROSTRUCTURE/
Authors: JIANG RL LIU JL ZHENG YD ZHENG GZ WEI YY SHEN XC
Citation: Rl. Jiang et al., HIGH HOLE MOBILITY SI SI1-XGEX/SI HETEROSTRUCTURE/, Chinese Physics Letters, 11(2), 1994, pp. 116-118
CUBIC SILICON-CARBIDE FILM GROWTH AND CHARACTERIZATION BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
Authors: SHI HT ZHANG R ZHENG YD HE YL LIU XN
Citation: Ht. Shi et al., CUBIC SILICON-CARBIDE FILM GROWTH AND CHARACTERIZATION BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Chinese Physics Letters, 11(11), 1994, pp. 709-712
RAMAN-STUDY OF STRAINED SIGE LAYERS
Authors: GU SL ZHANG R HAN P WANG RH ZHONG PX ZHENG YD
Citation: Sl. Gu et al., RAMAN-STUDY OF STRAINED SIGE LAYERS, Applied surface science, 81(4), 1994, pp. 431-434
OPTICAL ACTIVE PROCESS OF HIGHER-ORDER BANDS IN FAST-NEUTRON IRRADIATED SILICON
Authors: SHI Y WU FM ZHENG YD SUEZAWA M IMAI M SUMINO K
Citation: Y. Shi et al., OPTICAL ACTIVE PROCESS OF HIGHER-ORDER BANDS IN FAST-NEUTRON IRRADIATED SILICON, Solid state communications, 91(8), 1994, pp. 631-634
OPTICAL STUDIES OF INFRARED ACTIVE ELECTRONIC DEFECTS IN NEUTRON-IRRADIATED SILICON AFTER ANNEALING AT 450-DEGREES-C
Authors: SHI Y WU FM ZHENG YD SUEZAWA M IMAI M SUMINO K
Citation: Y. Shi et al., OPTICAL STUDIES OF INFRARED ACTIVE ELECTRONIC DEFECTS IN NEUTRON-IRRADIATED SILICON AFTER ANNEALING AT 450-DEGREES-C, Physica status solidi. a, Applied research, 144(1), 1994, pp. 139-148
TRANSPORT PROPERTY OF SI SI1-XGEX SI P-TYPE MODULATION-DOPED DOUBLE-HETEROSTRUCTURE
Authors: JIANG RL LIU JL ZHENG YD LI HF ZHENG HZ
Citation: Rl. Jiang et al., TRANSPORT PROPERTY OF SI SI1-XGEX SI P-TYPE MODULATION-DOPED DOUBLE-HETEROSTRUCTURE, Journal of applied physics, 76(4), 1994, pp. 2544-2546
GE COMPOSITION AND TEMPERATURE-DEPENDENCE OF THE DEPOSITION OF SIGE LAYERS
Authors: GU SL ZHENG YD ZHANG R WANG RH ZHONG PX
Citation: Sl. Gu et al., GE COMPOSITION AND TEMPERATURE-DEPENDENCE OF THE DEPOSITION OF SIGE LAYERS, Journal of applied physics, 75(10), 1994, pp. 5382-5384
INVESTIGATION ON HIGHER-ORDER BANDS IN IRRADIATED CZOCHRALSKI SILICON
Authors: SHI Y ZHENG YD SUEZAWA M IMAI M SUMINO K
Citation: Y. Shi et al., INVESTIGATION ON HIGHER-ORDER BANDS IN IRRADIATED CZOCHRALSKI SILICON, Applied physics letters, 64(10), 1994, pp. 1227-1229
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE AND RAMAN-SPECTRA FROM POROUSGESI SI HETEROSTRUCTURES/
Authors: SHI HT ZHENG YD WANG YB YUAN RK
Citation: Ht. Shi et al., TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE AND RAMAN-SPECTRA FROM POROUSGESI SI HETEROSTRUCTURES/, Applied physics. A, Solids and surfaces, 57(6), 1993, pp. 573-575
ELECTRICALLY-INDUCED LIGHT-EMISSION AND NOVEL PHOTOCURRENT RESPONSE OF A POROUS SILICON DEVICE
Authors: SHI HT ZHENG YD WANG YB YUAN RK
Citation: Ht. Shi et al., ELECTRICALLY-INDUCED LIGHT-EMISSION AND NOVEL PHOTOCURRENT RESPONSE OF A POROUS SILICON DEVICE, Applied physics letters, 63(6), 1993, pp. 770-772
STUDY OF GE MOVEMENT DURING THERMAL-REACTIONS BETWEEN PT AND GESI SI HETEROSTRUCTURES/
Authors: ZHONG PX ZHENG YD
Citation: Px. Zhong et Yd. Zheng, STUDY OF GE MOVEMENT DURING THERMAL-REACTIONS BETWEEN PT AND GESI SI HETEROSTRUCTURES/, Applied physics letters, 62(25), 1993, pp. 3259-3261
Risultati: 1-25 | 26-50 | 51-66 |