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1-12
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Results: 12
Authors:
NOSHO BZ
WEINBERG WH
ZINCK JJ
SHANABROOK BV
BENNETT BR
WHITMAN LJ
Citation: Bz. Nosho et al., STRUCTURE OF INAS ALSB/INAS RESONANT-TUNNELING DIODE INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2381-2386
Authors:
CHOW DH
HAFIZI M
STANCHINA WE
ROTH JA
ZINCK JJ
DUBRAY JJ
DUNLAP HL
Citation: Dh. Chow et al., MONOLITHIC INTEGRATION OF RESONANT-TUNNELING DIODES AND HETEROJUNCTION BIPOLAR-TRANSISTORS ON PATTERNED INP SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1413-1416
Authors:
GYURE MF
ZINCK JJ
RATSCH C
VVEDENSKY DD
Citation: Mf. Gyure et al., UNSTABLE GROWTH ON ROUGH SURFACES, Physical review letters, 81(22), 1998, pp. 4931-4934
Authors:
ZINCK JJ
CHOW DH
Citation: Jj. Zinck et Dh. Chow, EFFECTS OF MORPHOLOGY ON PHOTOEMISSION OSCILLATION MEASUREMENTS DURING GROWTH OF RESONANT-TUNNELING DEVICES, Journal of crystal growth, 175, 1997, pp. 323-327
Authors:
ZINCK JJ
TARSA EJ
BRAR B
SPECK JS
Citation: Jj. Zinck et al., DESORPTION BEHAVIOR OF ANTIMONY MULTILAYER PASSIVATION ON GAAS (001), Journal of applied physics, 82(12), 1997, pp. 6067-6072
Authors:
ZINCK JJ
CHOW DH
SCHULMAN J
Citation: Jj. Zinck et al., PHOTOEMISSION OSCILLATIONS AS AN IN-SITU MONITOR OF LAYER THICKNESS WITH MONOLAYER RESOLUTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2163-2165
Authors:
ZINCK JJ
CHOW DH
SCHULMAN JN
DUNLAP HL
Citation: Jj. Zinck et al., PHOTOEMISSION OSCILLATION MEASUREMENT OF BARRIER THICKNESS FOR INAS ALSB RESONANT-TUNNELING DIODES/, Applied physics letters, 68(10), 1996, pp. 1406-1408
Authors:
TARSA EJ
WU XH
IBBETSON JP
SPECK JS
ZINCK JJ
Citation: Ej. Tarsa et al., GROWTH OF EPITAXIAL MGO FILMS ON SB-PASSIVATED (001)GAAS - PROPERTIESOF THE MGO GAAS INTERFACE/, Applied physics letters, 66(26), 1995, pp. 3588-3590
Authors:
ZINCK JJ
CHOW DH
Citation: Jj. Zinck et Dh. Chow, MEASUREMENT OF PHOTOEMISSION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF (001) GAAS, ALAS, ALGAAS, INAS, AND ALSB, Applied physics letters, 66(25), 1995, pp. 3524-3526
Authors:
RAJAVEL D
ZINCK JJ
JENSEN JE
Citation: D. Rajavel et al., METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH KINETICS AND DOPING STUDIES OF (001) ZNSE, Journal of crystal growth, 138(1-4), 1994, pp. 19-27
Authors:
RAJAVEL D
ZINCK JJ
Citation: D. Rajavel et Jj. Zinck, GROWTH-KINETICS AND PROPERTIES OF HETEROEPITAXIAL (CD,ZN)TE FILMS PREPARED BY METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 22(8), 1993, pp. 803-808
Authors:
RAJAVEL D
ZINCK JJ
Citation: D. Rajavel et Jj. Zinck, METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY CD1-XZNXTE ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.27) FILMS, Applied physics letters, 63(3), 1993, pp. 322-324
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1-12
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