AAAAAA

   
Results: 1-10 |
Results: 10
Bands, bonds, and polarizations in nitrides - from electronic orbitals to electronic devices
Authors: Majewski, JA Zandler, G Vogl, P
Citation: Ja. Majewski et al., Bands, bonds, and polarizations in nitrides - from electronic orbitals to electronic devices, ACT PHY P A, 100(2), 2001, pp. 249-260
Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs
Authors: Sleiman, A Di Carlo, A Tocca, L Lugli, P Zandler, G Meneghesso, G Zanoni, E Canali, C Cetronio, A Lanzieri, M Peroni, M
Citation: A. Sleiman et al., Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs, SEMIC SCI T, 16(5), 2001, pp. 315-319
Polarization induced 2D hole gas in GaN/AlGaN heterostructures
Authors: Hackenbuchner, S Majewski, JA Zandler, G Vogl, P
Citation: S. Hackenbuchner et al., Polarization induced 2D hole gas in GaN/AlGaN heterostructures, J CRYST GR, 230(3-4), 2001, pp. 607-610
Breakdown quenching in high electron mobility transistor by using body contact
Authors: Sleiman, A Di Carlo, A Lugli, P Zandler, G
Citation: A. Sleiman et al., Breakdown quenching in high electron mobility transistor by using body contact, IEEE DEVICE, 48(10), 2001, pp. 2188-2191
Monte Carlo study of the dynamic breakdown effects in HEMT's
Authors: Di Carlo, A Rossi, L Lugli, P Zandler, G Meneghesso, G Jackson, M Zanoni, E
Citation: A. Di Carlo et al., Monte Carlo study of the dynamic breakdown effects in HEMT's, IEEE ELEC D, 21(4), 2000, pp. 149-151
The lower branch of plasmon-phonon coupled modes
Authors: Fischler, W Bratschitsch, R Hopfel, RA Zandler, G Strasser, G Unterrainer, K
Citation: W. Fischler et al., The lower branch of plasmon-phonon coupled modes, SEMIC SCI T, 15(8), 2000, pp. 813-817
Novel nitride devices based on polarization fields
Authors: Majewski, JA Zandler, G Vogl, P
Citation: Ja. Majewski et al., Novel nitride devices based on polarization fields, PHYS ST S-A, 179(1), 2000, pp. 285-293
Explaining the dependences of the hole and electron mobilities in Si inversion layers
Authors: Pirovano, A Lacaita, AL Zandler, G Oberhuber, R
Citation: A. Pirovano et al., Explaining the dependences of the hole and electron mobilities in Si inversion layers, IEEE DEVICE, 47(4), 2000, pp. 718-724
Pyroelectronics: Novel device concepts based on nitride interfaces
Authors: Zandler, G Majewski, JA Vogl, P
Citation: G. Zandler et al., Pyroelectronics: Novel device concepts based on nitride interfaces, J VAC SCI B, 17(4), 1999, pp. 1617-1621
Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs
Authors: Zandler, G Rossi, L DiCarlo, A Tocca, L Bonfiglio, A Brunori, M Lugli, P Meneghesso, G Zanoni, E
Citation: G. Zandler et al., Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs, PHYSICA B, 272(1-4), 1999, pp. 558-561
Risultati: 1-10 |