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Results: 1-25 | 26-49 |
Results: 26-49/49
Impact of the device scaling on the low-frequency noise in n-MOSFETs
Authors: Bu, HM Shi, Y Yuan, XL Zheng, YD Gu, SH Majima, H Ishikuro, H Hiramoto, T
Citation: Hm. Bu et al., Impact of the device scaling on the low-frequency noise in n-MOSFETs, APPL PHYS A, 71(2), 2000, pp. 133-136
The oxidation of gallium nitride epilayers in dry oxygen
Authors: Chen, P Zhang, R Xu, XF Zhou, YG Chen, ZZ Xie, SY Li, WP Zheng, YD
Citation: P. Chen et al., The oxidation of gallium nitride epilayers in dry oxygen, APPL PHYS A, 71(2), 2000, pp. 191-194
Influence of C on Ge incorporation in the growth of Ge-rich Ge1-x-ySixCy alloys on Si (100)
Authors: Liu, XB Zang, L Zhu, SM Cheng, XM Han, P Luo, ZY Zheng, YD
Citation: Xb. Liu et al., Influence of C on Ge incorporation in the growth of Ge-rich Ge1-x-ySixCy alloys on Si (100), APPL PHYS A, 70(4), 2000, pp. 465-467
Dynamics of tunneling into charge-tunable Si quantum dots
Authors: Shi, Y Yuan, XL Wu, J Bu, HM Yang, HG Han, P Zheng, YD Hiramoto, T
Citation: Y. Shi et al., Dynamics of tunneling into charge-tunable Si quantum dots, SUPERLATT M, 28(5-6), 2000, pp. 387-392
Preparation of AlGaN/GaN heterostructures on sapphire using light radiation heating metal-organic chemical vapor deposition at low pressure
Authors: Zhou, YG Shen, B Zhang, R Li, WP Chen, P Chen, ZZ Gu, SL Shi, Y Huang, ZC Zheng, YD
Citation: Yg. Zhou et al., Preparation of AlGaN/GaN heterostructures on sapphire using light radiation heating metal-organic chemical vapor deposition at low pressure, CHIN PHYS L, 17(8), 2000, pp. 617-618
Microstructures of GaN buffer layers grown on Si(111) using rapic thermal process low-pressure metalorganic chemical vapor deposition
Authors: Chen, P Shen, B Zhu, JM Chen, ZZ Zhou, YG Xie, SY Zhang, R Han, P Gu, SL Zheng, YD Jiang, SS Feng, D Huang, ZC
Citation: P. Chen et al., Microstructures of GaN buffer layers grown on Si(111) using rapic thermal process low-pressure metalorganic chemical vapor deposition, CHIN PHYS L, 17(3), 2000, pp. 224-226
Characterization of Pb(Zr0.53Ti0.47)O-3 films on GaN
Authors: Li, WP Zhang, R Zhou, YG Yin, J Shen, B Shi, Y Chen, ZZ Chen, P Liu, ZG Zheng, YD
Citation: Wp. Li et al., Characterization of Pb(Zr0.53Ti0.47)O-3 films on GaN, CHIN PHYS L, 17(2), 2000, pp. 137-138
Structure characterization of polyhydroxyalkanoates produced from activated sludge in waste water treatment process
Authors: Zheng, YD Zhong, BH Ma, WS Huang, JL
Citation: Yd. Zheng et al., Structure characterization of polyhydroxyalkanoates produced from activated sludge in waste water treatment process, CHEM J CH U, 21(6), 2000, pp. 991-993
Gas-phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal-organic chemical vapor deposition of AlGaN
Authors: Zhou, YG Zhang, R Li, WP Shen, B Chen, P Chen, ZZ Gu, SL Shi, Y Zheng, YD Huang, ZC
Citation: Yg. Zhou et al., Gas-phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal-organic chemical vapor deposition of AlGaN, MATER LETT, 45(6), 2000, pp. 331-335
Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures
Authors: Zheng, ZW Shen, B Zhang, R Gui, YS Jiang, CP Ma, ZX Zheng, GZ Guo, SL Shi, Y Han, P Zheng, YD Someya, T Arakawa, Y
Citation: Zw. Zheng et al., Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures, PHYS REV B, 62(12), 2000, pp. R7739-R7742
Deposition and crystallization of amorphous GaN buffer layers on Si(111)substrates
Authors: Chen, P Xie, SY Chen, ZZ Zhou, YG Shen, B Zhang, R Zheng, YD Zhu, JM Wang, M Wu, XS Jiang, SS Feng, D
Citation: P. Chen et al., Deposition and crystallization of amorphous GaN buffer layers on Si(111)substrates, J CRYST GR, 213(1-2), 2000, pp. 27-32
Evidence for ferroelectric border traps near the SrBi2Ta2O9/Si interface through capacitance-voltage measurement
Authors: Li, WP Zhang, R Shen, J Liu, YM Shen, B Chen, P Zhou, YG Li, J Yuan, XL Chen, ZZ Shi, Y Liu, ZG Zheng, YD
Citation: Wp. Li et al., Evidence for ferroelectric border traps near the SrBi2Ta2O9/Si interface through capacitance-voltage measurement, APPL PHYS L, 77(4), 2000, pp. 564-566
Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111)
Authors: Zhao, ZM Jiang, RL Chen, P Xi, DJ Luo, ZY Zhang, R Shen, B Chen, ZZ Zheng, YD
Citation: Zm. Zhao et al., Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111), APPL PHYS L, 77(3), 2000, pp. 444-446
Aluminum and GaN contacts on Si(111) and sapphire
Authors: Zhao, ZM Jiang, RL Chen, P Li, WP Xi, DJ Xie, SY Shen, B Zhang, R Zheng, YD
Citation: Zm. Zhao et al., Aluminum and GaN contacts on Si(111) and sapphire, APPL PHYS L, 77(20), 2000, pp. 3140-3142
Staircase band gap Si1-xGex/Si photodetectors
Authors: Lo, ZY Jiang, RL Zheng, YD Zang, L Chen, ZZ Zhu, SM Cheng, XM Liu, XB
Citation: Zy. Lo et al., Staircase band gap Si1-xGex/Si photodetectors, APPL PHYS L, 77(10), 2000, pp. 1548-1550
Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels
Authors: Bu, HM Shi, Y Yuan, XL Wu, J Gu, SL Zheng, YD Majima, H Ishikuro, H Hiramoto, T
Citation: Hm. Bu et al., Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels, APPL PHYS L, 76(22), 2000, pp. 3259-3261
Study of photocurrent properties of GaN ultraviolet photoconductor grown on 6H-SiC substrate
Authors: Shen, B Yang, K Zang, L Chen, ZZ Zhou, YG Chen, P Zhang, R Huang, ZC Zhou, HS Zheng, YD
Citation: B. Shen et al., Study of photocurrent properties of GaN ultraviolet photoconductor grown on 6H-SiC substrate, JPN J A P 1, 38(2A), 1999, pp. 767-769
Multistage extension and age dating of the Xiaoqinling metamorphic core complex, central China
Authors: Zhang, JJ Zheng, YD
Citation: Jj. Zhang et Yd. Zheng, Multistage extension and age dating of the Xiaoqinling metamorphic core complex, central China, ACT GEO S-E, 73(2), 1999, pp. 139-147
Growth of wurtzite GaN films on alpha-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition
Authors: Shen, B Zhou, YG Chen, ZZ Chen, P Zhang, R Shi, Y Zheng, YD Tong, W Park, W
Citation: B. Shen et al., Growth of wurtzite GaN films on alpha-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition, APPL PHYS A, 68(5), 1999, pp. 593-596
Influence of growth conditions on the incorporation of substitutional C inSi1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4
Authors: Jiang, N Zang, L Jiang, RL Zhu, SM Han, P Liu, XB Cheng, XM Wang, RH Zheng, YD Hu, XN Fang, JX
Citation: N. Jiang et al., Influence of growth conditions on the incorporation of substitutional C inSi1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4, APPL PHYS A, 68(4), 1999, pp. 457-460
Improvement of plant regeneration from long-term cultured calluses of Taipei 309, a model rice variety in in vitro studies
Authors: Yang, YS Zheng, YD Chen, YL Jian, YY
Citation: Ys. Yang et al., Improvement of plant regeneration from long-term cultured calluses of Taipei 309, a model rice variety in in vitro studies, PL CELL TIS, 57(3), 1999, pp. 199-206
Room-temperature blue luminescence of thermally oxidized Si1-x-yGexCy thinfilms on Si (100) substrates
Authors: Cheng, XM Zheng, YD Liu, XB Zang, L Lo, ZY Zhu, SM Han, P Jiang, RL
Citation: Xm. Cheng et al., Room-temperature blue luminescence of thermally oxidized Si1-x-yGexCy thinfilms on Si (100) substrates, APPL PHYS L, 75(21), 1999, pp. 3333-3335
Studies of metal-ferroelectric-GaN structures
Authors: Li, WP Zhang, R Zhou, YG Yin, J Bu, HM Luo, ZY Shen, B Shi, Y Jiang, RL Gu, SL Liu, ZG Zheng, YD Huang, ZC
Citation: Wp. Li et al., Studies of metal-ferroelectric-GaN structures, APPL PHYS L, 75(16), 1999, pp. 2416-2417
Syn-deformation P-T paths of Xiaoqinling metamorphic core complex
Authors: Liu, SW Zhang, JJ Zheng, YD
Citation: Sw. Liu et al., Syn-deformation P-T paths of Xiaoqinling metamorphic core complex, CHIN SCI B, 43(22), 1998, pp. 1927-1934
Risultati: 1-25 | 26-49 |