Authors:
Kalitzova, M
Zollo, G
Yankov, R
Angelov, C
Simov, S
Pizzuto, C
Faure, J
Kilian, L
Bonhomme, P
Manno, D
Voelskow, M
Vitali, G
Citation: M. Kalitzova et al., Ion-beam-assisted nanocrystal formation in silicon implanted with high doses of Pb+ and Bi+ ions, JPN J A P 1, 40(10), 2001, pp. 5841-5849
Authors:
Tzolov, M
Tzenov, N
Dimova-Malinovska, D
Kalitzova, M
Pizzuto, C
Vitali, G
Zollo, G
Ivanov, I
Citation: M. Tzolov et al., Modification of the structure of ZnO : Al films by control of the plasma parameters, THIN SOL FI, 396(1-2), 2001, pp. 274-279
Authors:
Pizzuto, C
Vitali, G
Zollo, G
Kalitzova, M
Citation: C. Pizzuto et al., Effects of the annealing atmosphere on the electrical properties of low-power pulsed-laser annealed Zn-implanted InP, VACUUM, 58(2-3), 2000, pp. 516-522
Authors:
Tzolov, M
Tzenov, N
Dimova-Malinovska, D
Kalitzova, M
Pizzuto, C
Vitali, G
Zollo, G
Ivanov, I
Citation: M. Tzolov et al., Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering, THIN SOL FI, 379(1-2), 2000, pp. 28-36
Authors:
Dinia, A
Zollo, G
Pizzuto, C
Vitali, G
Kalitzova, M
Citation: A. Dinia et al., In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP, SOL ST COMM, 113(7), 2000, pp. 385-388
Authors:
Zollo, G
Pizzuto, C
Vitali, G
Kalitzova, M
Manno, D
Citation: G. Zollo et al., High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs, J APPL PHYS, 88(4), 2000, pp. 1806-1810
Citation: C. Pizzuto et al., Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere, J MAT S-M E, 10(5-6), 1999, pp. 407-411
Authors:
Vitali, G
Pizzuto, C
Zollo, G
Karpuzov, D
Kalitzova, M
van der Heide, P
Scamarcio, G
Spagnolo, V
Chiavarone, L
Manno, D
Citation: G. Vitali et al., Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere, PHYS REV B, 59(4), 1999, pp. 2986-2994