AAAAAA

   
Results: 1-12 |
Results: 12
Interface properties of annealed and nitrided HTO layers
Authors: Polignano, ML Carpanese, C Crivelli, B Giussani, A Zonca, R Bersani, A
Citation: Ml. Polignano et al., Interface properties of annealed and nitrided HTO layers, MICROEL ENG, 59(1-4), 2001, pp. 379-384
High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications
Authors: Brazzelli, D Ghidini, G Crivelli, B Zonca, R Bersani, M
Citation: D. Brazzelli et al., High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications, SOL ST ELEC, 45(8), 2001, pp. 1271-1278
The impact of the nitridation process on the properties of the Si-SiO2 interface
Authors: Polignano, ML Alessandri, M Crivelli, B Zonca, R Caricato, AP Bersani, M Sbetti, M Vanzetti, L
Citation: Ml. Polignano et al., The impact of the nitridation process on the properties of the Si-SiO2 interface, J NON-CRYST, 280(1-3), 2001, pp. 39-47
Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology
Authors: Gerardi, C Melanotte, M Crivelli, B Zonca, R Alessandri, M
Citation: C. Gerardi et al., Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology, MICRON, 31(3), 2000, pp. 291-297
Surface characterization by photocurrent measurements
Authors: Polignano, ML Caricato, AP Modelli, A Zonca, R
Citation: Ml. Polignano et al., Surface characterization by photocurrent measurements, APPL SURF S, 154, 2000, pp. 276-282
Electrical characterisation of oxides grown in different RTP ambients
Authors: Brazzelli, D Ghidini, G Crivelli, B Zonca, R Bersani, M Xing, GC Miner, GE D'Astici, N Kuppurao, S Lopes, D
Citation: D. Brazzelli et al., Electrical characterisation of oxides grown in different RTP ambients, MICROEL REL, 40(4-5), 2000, pp. 641-644
Effects of nitridation by nitric oxide on the leakage current of thin SiO2gate oxides
Authors: Gerardi, C Melanotte, M Lombardo, S Alessandri, M Crivelli, B Zonca, R
Citation: C. Gerardi et al., Effects of nitridation by nitric oxide on the leakage current of thin SiO2gate oxides, J APPL PHYS, 87(1), 2000, pp. 498-501
A novel method for the simultaneous characterization of bulk impurities and surface states by photocurrent measurements
Authors: Polignano, ML Caricato, AP Modelli, A Zonca, R
Citation: Ml. Polignano et al., A novel method for the simultaneous characterization of bulk impurities and surface states by photocurrent measurements, J ELCHEM SO, 147(4), 2000, pp. 1577-1582
Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy
Authors: Tallarida, G Cazzaniga, F Crivelli, B Zonca, R Alessandri, M
Citation: G. Tallarida et al., Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy, J NON-CRYST, 245, 1999, pp. 210-216
Nitridation of thin gate or tunnel oxides by nitric oxide
Authors: Gerardi, C Zonca, R Crivelli, B Alessandri, M
Citation: C. Gerardi et al., Nitridation of thin gate or tunnel oxides by nitric oxide, J ELCHEM SO, 146(8), 1999, pp. 3058-3064
Surface recombination velocity from photocurrent measurements - Validationand applications
Authors: Polignano, ML Bellafiore, N Caputo, D Caricato, AP Modelli, A Zonca, R
Citation: Ml. Polignano et al., Surface recombination velocity from photocurrent measurements - Validationand applications, J ELCHEM SO, 146(12), 1999, pp. 4640-4646
Kinetic modeling and dopant effect on silicon deposition - Low pressure and plasma assisted chemical vapor deposition
Authors: Masi, M Zonca, R Carra, S
Citation: M. Masi et al., Kinetic modeling and dopant effect on silicon deposition - Low pressure and plasma assisted chemical vapor deposition, J ELCHEM SO, 146(1), 1999, pp. 103-110
Risultati: 1-12 |