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Results:
1-14
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Results: 14
Authors:
Evstratov, IY
Kalaev, VV
Zhmakin, AI
Makarov, YN
Abramov, AG
Ivanov, NG
Smirnov, EM
Dornberger, E
Virbulis, J
Tomzig, E
von Ammon, W
Citation: Iy. Evstratov et al., Modeling analysis of unsteady three-dimensional turbulent melt flow duringCzochralski growth of Si crystals, J CRYST GR, 230(1-2), 2001, pp. 22-29
Authors:
Wetzel, T
Muiznieks, A
Muhlbauer, A
Gelfgat, Y
Gorbunov, L
Virbulis, J
Tomzig, E
von Ammon, W
Citation: T. Wetzel et al., Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility, J CRYST GR, 230(1-2), 2001, pp. 81-91
Authors:
Virbulis, J
Wetzel, T
Muiznieks, A
Hanna, B
Dornberger, E
Tomzig, E
Muhlbauer, A
von Ammon, W
Citation: J. Virbulis et al., Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields, J CRYST GR, 230(1-2), 2001, pp. 92-99
Authors:
Dornberger, E
von Ammon, W
Virbulis, J
Hanna, B
Sinno, T
Citation: E. Dornberger et al., Modeling of transient point defect dynamics in Czochralski silicon crystals, J CRYST GR, 230(1-2), 2001, pp. 291-299
Authors:
Dornberger, E
Virbulis, J
Hanna, B
Hoelzl, R
Daub, E
von Ammon, W
Citation: E. Dornberger et al., Silicon crystals for future requirements of 300 mm wafers, J CRYST GR, 229(1), 2001, pp. 11-16
Authors:
von Ammon, W
Holzl, R
Virbulis, J
Dornberger, E
Schmolke, R
Graf, D
Citation: W. Von Ammon et al., The impact of nitrogen on the defect aggregation in silicon, J CRYST GR, 226(1), 2001, pp. 19-30
Authors:
Sinno, T
Dornberger, E
von Ammon, W
Brown, RA
Dupret, F
Citation: T. Sinno et al., Defect engineering of Czochralski single-crystal silicon, MAT SCI E R, 28(5-6), 2000, pp. 149-198
Authors:
Grabner, O
Muhe, A
Muller, G
Tomzig, E
Virbulis, J
von Ammon, W
Citation: O. Grabner et al., Analysis of turbulent flow in silicon melts by optical temperature measurement, MAT SCI E B, 73(1-3), 2000, pp. 130-133
Authors:
Tomzig, E
von Ammon, W
Dornberger, E
Lambert, U
Zulehner, W
Citation: E. Tomzig et al., Challenges for economical growth of high quality 300 mm CZ Si crystals, MICROEL ENG, 45(2-3), 1999, pp. 113-125
Authors:
Muller, G
Muhe, A
Backofen, R
Tomzig, E
von Ammon, W
Citation: G. Muller et al., Study of oxygen transport in Czochralski growth of silicon, MICROEL ENG, 45(2-3), 1999, pp. 135-147
Authors:
von Ammon, W
Dornberger, E
Hansson, PO
Citation: W. Von Ammon et al., Bulk properties of very large diameter silicon single crystals, J CRYST GR, 199, 1999, pp. 390-398
Authors:
Muhe, A
Backofen, R
Fainberg, J
Muller, G
Dornberger, E
Tomzig, E
von Ammon, W
Citation: A. Muhe et al., Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation, J CRYST GR, 199, 1999, pp. 409-413
Authors:
Kissinger, G
Grabolla, T
Morgenstern, G
Richter, H
Graf, D
Vanhellemont, J
Lambert, U
von Ammon, W
Citation: G. Kissinger et al., Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing, J ELCHEM SO, 146(5), 1999, pp. 1971-1976
Authors:
Sinno, T
Susanto, H
Brown, RA
von Ammon, W
Dornberger, E
Citation: T. Sinno et al., Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics, APPL PHYS L, 75(11), 1999, pp. 1544-1546
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1-14
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