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Results:
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Results: 20
Authors:
von Kanel, H
Rosenblad, C
Kummer, M
Muller, E
Graf, T
Hackbarth, T
Citation: H. Von Kanel et al., Fast deposition process for graded SiGe buffer layers, JPN J A P 1, 39(4B), 2000, pp. 2050-2053
Authors:
Rosenblad, C
Kummer, M
Dommann, A
Muller, E
Gusso, M
Tapfer, L
von Kanel, H
Citation: C. Rosenblad et al., Virtual substrates for the n- and p-type Si-MODFET grown at very high rates, MAT SCI E B, 74(1-3), 2000, pp. 113-117
Authors:
Rosenblad, C
Stangl, J
Muller, E
Bauer, G
von Kanel, H
Citation: C. Rosenblad et al., Strain relaxation of graded SiGe buffers grown at very high rates, MAT SCI E B, 71, 2000, pp. 20-23
Authors:
Kummer, M
Vogeli, B
von Kanel, H
Citation: M. Kummer et al., Si overgrowth of self-assembled Ge clusters on Si(001) - a scanning tunnelling microscopy study, MAT SCI E B, 69, 2000, pp. 247-250
Authors:
von Kanel, H
Meyer, T
Klemenc, M
Citation: H. Von Kanel et al., Microscopy and spectroscopy of buried nanostructures, J ELEC SPEC, 109(1-2), 2000, pp. 197-209
Authors:
Klemenc, M
Meyer, T
von Kanel, H
Citation: M. Klemenc et al., Si surface band-gap shift on top of buried Ge quantum dots, APPL SURF S, 166(1-4), 2000, pp. 268-272
Authors:
Vogeli, B
von Kanel, H
Citation: B. Vogeli et H. Von Kanel, AFM-study of sticking effects for microparts handling, WEAR, 238(1), 2000, pp. 20-24
Authors:
Hackbarth, T
Herzog, HJ
Zeuner, M
Hock, G
Fitzgerald, BA
Bulsara, M
Rosenblad, C
von Kanel, H
Citation: T. Hackbarth et al., Alternatives to thick MBE-grown relaxed SiGe buffers, THIN SOL FI, 369(1-2), 2000, pp. 148-151
Authors:
Meyer, T
Klemenc, M
von Kanel, H
Niedermann, P
Citation: T. Meyer et al., Diamond tips in low temperature scanning tunneling microscopy, SURF SCI, 470(1-2), 2000, pp. 164-170
Authors:
Meyer, T
Migas, D
Miglio, L
von Kanel, H
Citation: T. Meyer et al., Electron and hole focusing in CoSi2/Si(111) observed by ballistic electronemission microscopy, PHYS REV L, 85(7), 2000, pp. 1520-1523
Authors:
Kummer, M
Vogeli, B
Meyer, T
von Kanel, H
Citation: M. Kummer et al., D-A steps and 2D islands of double layer height in the SiGe(001) system, PHYS REV L, 84(1), 2000, pp. 107-110
Authors:
von Kanel, H
Meyer, T
Citation: H. Von Kanel et T. Meyer, Nano-scale defect analysis by BEEM, J CRYST GR, 210(1-3), 2000, pp. 401-407
Authors:
Rosenblad, C
von Kanel, H
Kummer, M
Dommann, A
Muller, E
Citation: C. Rosenblad et al., A plasma process for ultrafast deposition of SiGe graded buffer layers, APPL PHYS L, 76(4), 2000, pp. 427-429
Authors:
Hock, G
Kohn, E
Rosenblad, C
von Kanel, H
Herzog, HJ
Konig, U
Citation: G. Hock et al., High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition, APPL PHYS L, 76(26), 2000, pp. 3920-3922
Authors:
Meyer, T
Klemenc, M
Graf, T
von Kanel, H
Citation: T. Meyer et al., Self-organization in Si/CoSi2(111) heteroepitaxy, J VAC SCI B, 17(4), 1999, pp. 1848-1851
Authors:
Rosenblad, C
Deller, HR
von Kanel, H
Citation: C. Rosenblad et al., Influence of hydrogen desorption on the generation of defects in LEPECVD, MAT SCI E B, 58(1-2), 1999, pp. 76-80
Authors:
Meyer, T
Klemenc, M
von Kanel, H
Citation: T. Meyer et al., Surface electronic structure modifications due to buried quantum dots, PHYS REV B, 60(12), 1999, pp. R8493-R8496
Authors:
Fanciulli, M
Weyer, G
Svane, A
Christensen, NE
von Kanel, H
Muller, E
Onda, N
Miglio, L
Tavazza, F
Celino, M
Citation: M. Fanciulli et al., Microscopic environment of Fe in epitaxially stabilized c-FeSi, PHYS REV B, 59(5), 1999, pp. 3675-3687
Authors:
Bennett, PA
von Kanel, H
Citation: Pa. Bennett et H. Von Kanel, Scanning tunnelling microscopy studies of silicides, J PHYS D, 32(15), 1999, pp. R71-R87
Authors:
Rosenblad, C
Graf, T
Stangl, J
Zhuang, Y
Bauer, G
Schulze, J
von Kanel, H
Citation: C. Rosenblad et al., Epitaxial growth at high rates with LEPECVD, THIN SOL FI, 336(1-2), 1998, pp. 89-91
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