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Results: 76-100/1514
Authors:
RHIGER DR
PETERSON JM
EMERSON RM
GORDON EE
SEN S
CHEN Y
DUDLEY M
Citation: Dr. Rhiger et al., INVESTIGATION OF THE CROSS-HATCH PATTERN AND LOCALIZED DEFECTS IN EPITAXIAL HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 615-623
Authors:
HAILS JE
COLEHAMILTON DJ
GIESS J
Citation: Je. Hails et al., THE ORIGIN OF HILLOCKS IN (HG,CD)TE GROWN BY MOVPE, Journal of electronic materials, 27(6), 1998, pp. 624-633
Authors:
ZHANG LH
SUMMERS CJ
Citation: Lh. Zhang et Cj. Summers, A STUDY OF VOID DEFECTS IN METALORGANIC MOLECULAR-BEAM EPITAXY-GROWN HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 634-639
Authors:
CHANDRA D
SHIH HD
AQARIDEN F
DAT R
GUTZLER S
BEVAN MJ
ORENT T
Citation: D. Chandra et al., FORMATION AND CONTROL OF DEFECTS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 640-647
Authors:
DENISOV IA
LAKEENKOV VM
JOURAVLEV OK
Citation: Ia. Denisov et al., PHYSICOCHEMICAL PROPERTIES OF GA AND IN DOPANTS DURING LIQUID-PHASE EPITAXY OF CDXHG1-XTE, Journal of electronic materials, 27(6), 1998, pp. 648-650
Authors:
HIRSCH LS
ZIEMER KS
RICHARDSBABB MR
STINESPRING CD
MYERS TH
COLIN T
Citation: Ls. Hirsch et al., THE USE OF ATOMIC-HYDROGEN FOR LOW-TEMPERATURE OXIDE REMOVAL FROM HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 651-656
Authors:
JOHNSON JN
ALMEIDA LA
BENSON JD
DINAN JH
MARTINKA M
Citation: Jn. Johnson et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA PREPARATION OF CDZNTE (211)B SURFACES FOR HGCDTE MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 27(6), 1998, pp. 657-660
Authors:
MUSCA CA
SILIQUINI JF
SMITH EPG
DELL JM
FARAONE L
Citation: Ca. Musca et al., LASER-BEAM INDUCED CURRENT IMAGING OF REACTIVE ION ETCHING INDUCED N-TYPE DOPING IN HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 661-667
Authors:
LEE CH
PAIK SW
PARK JW
LEE J
MOON YM
CHOI JB
JUNG H
LEE HC
KIM CK
HAHN MS
SONG BK
HOU YB
KANG TW
YOO KH
JEOUNG YT
KIM HK
KIM JM
Citation: Ch. Lee et al., HGCDTE-MISFET FABRICATION WITH MULTISTEP SURFACE PASSIVATION AND QUANTUM EFFECTS, Journal of electronic materials, 27(6), 1998, pp. 668-671
Authors:
HOLANDERGLEIXNER S
ROBINSON HG
HELMS CR
Citation: S. Holandergleixner et al., SIMULATION OF HGTE CDTE INTERDIFFUSION USING FUNDAMENTAL POINT-DEFECTMECHANISMS/, Journal of electronic materials, 27(6), 1998, pp. 672-679
Authors:
HAN MS
HAHN SR
KWON HC
BIN Y
KANG TW
LEEM JH
HOU YB
JEON HC
HYUN JK
JEOUNG YT
KIM HK
KIM JM
KIM TW
Citation: Ms. Han et al., INTERDIFFUSION BEHAVIOR OF HG IN HGTE CDTE SUPERLATTICES GROWN ON CD0.96ZN0.04TE (211)B SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of electronic materials, 27(6), 1998, pp. 680-683
Authors:
LEE SH
BAE SH
LEE HC
KIM CK
Citation: Sh. Lee et al., SURFACE-TREATMENT EFFECTS ON THE ELECTRICAL-PROPERTIES OF THE INTERFACES BETWEEN ZNS AND LPE-GROWN HG0.7CD0.3TE, Journal of electronic materials, 27(6), 1998, pp. 684-688
Authors:
HOLLINGSWORTH RE
DEHART C
WANG L
JOHNSON JN
BENSON JD
DINAN EH
Citation: Re. Hollingsworth et al., AN A-SI-H VACUUM-COMPATIBLE PHOTORESIST PROCESS FOR FABRICATING DEVICE STRUCTURES IN HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 689-693
Authors:
KRISHNAMURTHY S
CHEN AB
SHER A
Citation: S. Krishnamurthy et al., FULL BAND-STRUCTURE CALCULATION OF MINORITY-CARRIER LIFETIMES IN HGCDTE AND THALLIUM-BASED ALLOYS, Journal of electronic materials, 27(6), 1998, pp. 694-697
Authors:
EDWALL DD
DEWAMES RE
MCLEVIGE WV
PASKO JG
ARIAS JM
Citation: Dd. Edwall et al., MEASUREMENT OF MINORITY-CARRIER LIFETIME IN N-TYPE MBE HGCDTE AND ITSDEPENDENCE ON ANNEALING, Journal of electronic materials, 27(6), 1998, pp. 698-702
Authors:
MAO DH
SYLLAIOS AJ
ROBINSON HG
HELMS CR
Citation: Dh. Mao et al., OPTICAL-ABSORPTION OF UN-IMPLANTED AND IMPLANTED HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 703-708
Authors:
LEE D
BRIGGS R
NORTON T
PARKER D
SMITH F
TOBIN S
WELSCH J
CASE F
MCCURDY J
MITRA P
Citation: D. Lee et al., AUTOMATED LIFETIME MONITORING FOR FACTORY PROCESS-CONTROL, Journal of electronic materials, 27(6), 1998, pp. 709-717
Authors:
CHU JH
GUI YS
LI BO
TANG DY
Citation: Jh. Chu et al., DETERMINATION OF CUTOFF WAVELENGTH AND COMPOSITION DISTRIBUTION IN HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 718-721
Authors:
DEWAMES RE
EDWALL DD
ZANDIAN M
BUBULAC LO
PASKO JG
TENNANT WE
ARIAS JM
DSOUZA A
Citation: Re. Dewames et al., DARK CURRENT GENERATING MECHANISMS IN SHORT-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 722-726
Authors:
DSOUZA AI
BAJAJ J
DEWAMES RE
EDWALL DD
WIJEWARNASURIYA PS
NAYAR N
Citation: Ai. Dsouza et al., MWIR DLPH HGCDTE PHOTODIODE PERFORMANCE DEPENDENCE ON SUBSTRATE MATERIAL, Journal of electronic materials, 27(6), 1998, pp. 727-732
Authors:
JONES CL
METCALFE NE
BEST A
CATCHPOLE R
MAXEY CD
GORDON NT
HALL RS
COLIN H
SKAULI T
Citation: Cl. Jones et al., EFFECT OF DEVICE PROCESSING ON 1 F NOISE IN UNCOOLED, AUGER-SUPPRESSED CDHGTE DIODES/, Journal of electronic materials, 27(6), 1998, pp. 733-739
Authors:
MUSCA C
ANTOSZEWSKI J
DELL J
FARAONE L
PIOTROWSKI J
NOWAK Z
Citation: C. Musca et al., MULTI-HETEROJUNCTION LARGE-AREA HGCDTE LONG-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTOR FOR OPERATION AT NEAR ROOM TEMPERATURES, Journal of electronic materials, 27(6), 1998, pp. 740-746
Authors:
RAJAVEL RD
JAMBA DM
JENSEN JE
WU OK
BREWER PD
WILSON JA
JOHNSON JL
PATTEN EA
KOSAI K
CAULFIELD JT
GOETZ PM
Citation: Rd. Rajavel et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND PERFORMANCE OF HGCDTE-BASED SIMULTANEOUS-MODE 2-COLOR DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 747-751
Authors:
MEHENDALE M
SIVANANTHAN S
POTZ W
SCHROEDER WA
Citation: M. Mehendale et al., HOT PHONON EFFECTS IN ZNSE, Journal of electronic materials, 27(6), 1998, pp. 752-755
Authors:
MOLDOVAN M
HIRSCH LS
PTAK AJ
STINESPRING CD
MYERS TH
GILES NC
Citation: M. Moldovan et al., NITROGEN DOPING OF ZNSE AND CDTE EPILAYERS - A COMPARISON OF 2 RF SOURCES, Journal of electronic materials, 27(6), 1998, pp. 756-762