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Results: 176-200/1514
Authors:
FAN JC
TSAI CM
CHEN KY
WANG SY
LIN G
LEE CP
Citation: Jc. Fan et al., LOW-RESISTANCE VERTICAL CONDUCTION ACROSS EPITAXIALLY LIFTED-OFF N-GAAS FILM AND PD GE/PD COATED SI SUBSTRATE/, Journal of electronic materials, 27(3), 1998, pp. 110-113
Authors:
BERDINSKIKH T
RUDA HE
MEI XY
BUCHANAN M
Citation: T. Berdinskikh et al., A KINETIC-STUDY OF STRUCTURED SURFACE-RELIEF PATTERNING OF GAP((1)OVER-BAR(1)OVER-BAR(1)OVER-BAR), Journal of electronic materials, 27(3), 1998, pp. 114-121
Authors:
WIRTH R
GENG C
SCHOLZ F
HANGLEITER A
Citation: R. Wirth et al., DETERMINATION OF ORDERING INDUCED BIREFRINGENCE IN (AL)GAINP, Journal of electronic materials, 27(3), 1998, pp. 122-126
Authors:
YEO JS
AKELLA A
HUANG TF
HESSELINK L
Citation: Js. Yeo et al., GROWTH OF CSLIB6O10 THIN-FILMS ON SI SUBSTRATE BY PULSED-LASER DEPOSITION USING SIO2 AND CAF2 AS BUFFER LAYERS, Journal of electronic materials, 27(3), 1998, pp. 127-131
Authors:
HONG J
LAMBERS ES
ABERNATHY CR
PEARTON SJ
SHUL RJ
HOBSON WS
Citation: J. Hong et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CL-2AND BCL3 CHEMISTRIES, Journal of electronic materials, 27(3), 1998, pp. 132-137
Authors:
LAPASIN R
PRICL S
SIRTORI V
CASATI D
Citation: R. Lapasin et al., VISCOELASTIC PROPERTIES OF SOLDER PASTES, Journal of electronic materials, 27(3), 1998, pp. 138-148
Authors:
KORHONEN TM
KIVILAHTI JK
Citation: Tm. Korhonen et Jk. Kivilahti, THERMODYNAMICS OF THE SN-IN-AG SOLDER SYSTEM, Journal of electronic materials, 27(3), 1998, pp. 149-158
Authors:
BELTRAN NH
BALOCCHI C
ERRAZU X
AVILA RE
PIDERIT G
Citation: Nh. Beltran et al., RAPID THERMAL ANNEALING OF ZIRCONIA FILMS DEPOSITED BY SPRAY-PYROLYSIS, Journal of electronic materials, 27(2), 1998, pp. 9-11
Authors:
LI B
GUI YS
ZHU JQ
CHU JH
Citation: B. Li et al., STRUCTURE INVESTIGATION ON HG1-XCDXTE LIQUID-PHASE EPITAXIAL-FILMS GROWN BY THE MELTETCH TECHNIQUE, Journal of electronic materials, 27(2), 1998, pp. 51-54
Authors:
SHI Z
ZOGG H
KELLER U
Citation: Z. Shi et al., THICK CRACK-FREE CAF2 EPITAXIAL LAYER ON GAAS(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 27(2), 1998, pp. 55-58
Authors:
WANG ZM
FENG SL
LU ZD
ZHAO Q
YANG XP
CHEN ZG
XU ZY
ZHENG HZ
Citation: Zm. Wang et al., ANNEALING BEHAVIOR OF INAS GAAS QUANTUM-DOT STRUCTURES/, Journal of electronic materials, 27(2), 1998, pp. 59-61
Authors:
FANG ZQ
LOOK DC
MIER MG
Citation: Zq. Fang et al., CHARACTERIZATION OF DEEP CENTERS IN UNDOPED SEMIINSULATING GAAS SUBSTRATES BY NORMALIZED THERMALLY STIMULATED CURRENT SPECTROSCOPY - COMPARISON OF 100 AND 150 MM WAFERS, Journal of electronic materials, 27(2), 1998, pp. 62-68
Authors:
KOPF RF
HAMM RA
MALIK RJ
RYAN RW
GEVA M
BURM J
TATE A
Citation: Rf. Kopf et al., ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/, Journal of electronic materials, 27(2), 1998, pp. 69-72
Authors:
KRESTNIKOV IL
IVANOV SV
KOPEV PS
LEDENTSOV NN
MAXIMOV MV
SAKHAROV AV
SOROKIN SV
TORRES CMS
BIMBERG D
ALFEROV ZI
Citation: Il. Krestnikov et al., RT LASING VIA NANOSCALE CDSE ISLANDS IN A (ZN,MG)(S,SE) MATRIX, Journal of electronic materials, 27(2), 1998, pp. 73-76
Authors:
FELIX CL
BEWLEY WW
AIFER EH
VURGAFTMAN I
MEYER JR
LIN CH
ZHANG D
MURRY SJ
YANG RQ
PEI SS
Citation: Cl. Felix et al., LOW-THRESHOLD 3 MU-M INTERBAND CASCADE W-LASER, Journal of electronic materials, 27(2), 1998, pp. 77-80
Authors:
HAN BK
LI L
KAPPERS MJ
HICKS RF
YOON H
GOORSKY MS
HIGA KT
Citation: Bk. Han et al., CHARACTERIZATION OF INGAAS GAAS(001) FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING ALTERNATIVE SOURCES/, Journal of electronic materials, 27(2), 1998, pp. 81-84
Authors:
CHO MW
KOH KW
BAGNALL DM
ZHU Z
YAO T
Citation: Mw. Cho et al., ZNSE HETEROEPITAXY ON GAAS(110) SUBSTRATE, Journal of electronic materials, 27(2), 1998, pp. 85-88
Authors:
IVEY DG
LUO J
INGREY S
MOORE R
WOODS I
Citation: Dg. Ivey et al., GALVANIC CORROSION EFFECTS IN INP-BASED LASER RIDGE STRUCTURES, Journal of electronic materials, 27(2), 1998, pp. 89-95
Authors:
LIANG S
GORLA CR
EMANETOGLU N
LIU Y
MAYO WE
LU Y
Citation: S. Liang et al., EPITAXIAL-GROWTH OF (1 1 (2)OVER-BAR 0) ZNO ON (0 1 (1)OVER-BAR 2) AL2O3 BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 27(11), 1998, pp. 72-76
Authors:
WANG YZ
AWADELKARIM OO
Citation: Yz. Wang et Oo. Awadelkarim, THE EFFECTS OF GLASS-SUBSTRATES SURFACE-TREATMENT ON THE CHARACTERISTICS OF N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of electronic materials, 27(11), 1998, pp. 77-80
Authors:
GHOSH G
KANG S
MURTY KL
NOTIS M
Citation: G. Ghosh et al., SPECIAL ISSUE ON INTERFACIAL REACTIONS, SOLID-STATE TRANSFORMATIONS AND THERMAL MANAGEMENT - FOREWORD, Journal of electronic materials, 27(11), 1998, pp. 1137-1137
Authors:
DHEURLE FM
Citation: Fm. Dheurle, SILICIDE INTERFACES IN SILICON TECHNOLOGY, Journal of electronic materials, 27(11), 1998, pp. 1138-1147
Authors:
JIN S
MAVOORI H
Citation: S. Jin et H. Mavoori, PROCESSING AND PROPERTIES OF CVD DIAMOND FOR THERMAL MANAGEMENT, Journal of electronic materials, 27(11), 1998, pp. 1148-1153
Authors:
GHOSH G
Citation: G. Ghosh, DIFFUSION AND PHASE-TRANSFORMATIONS DURING INTERFACIAL REACTION BETWEEN LEAD-TIN SOLDERS AND PALLADIUM, Journal of electronic materials, 27(11), 1998, pp. 1154-1160
Authors:
LEE HM
YOON SW
LEE BJ
Citation: Hm. Lee et al., THERMODYNAMIC PREDICTION OF INTERFACE PHASES AT CU SOLDER JOINTS/, Journal of electronic materials, 27(11), 1998, pp. 1161-1166