Authors:
KIM S
MOHSENI H
ERDTMANN M
MICHEL E
JELEN C
RAZEGHI M
Citation: S. Kim et al., GROWTH AND CHARACTERIZATION OF INGAAS INGAP QUANTUM DOTS FOR MIDINFRARED PHOTOCONDUCTIVE DETECTOR/, Applied physics letters, 73(7), 1998, pp. 963-965
Authors:
HARRIS L
MOWBRAY DJ
SKOLNICK MS
HOPKINSON M
HILL G
Citation: L. Harris et al., EMISSION-SPECTRA AND MODE STRUCTURE OF INAS GAAS SELF-ORGANIZED QUANTUM-DOT LASERS/, Applied physics letters, 73(7), 1998, pp. 969-971
Citation: V. Ng et al., NONLINEAR ELECTRON-TRANSPORT CHARACTERISTICS IN ULTRATHIN WIRES OF RECRYSTALLIZED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 73(7), 1998, pp. 972-974
Authors:
KOZODOY P
IBBETSON JP
MARCHAND H
FINI PT
KELLER S
SPECK JS
DENBAARS SP
MISHRA UK
Citation: P. Kozodoy et al., ELECTRICAL CHARACTERIZATION OF GAN P-N-JUNCTIONS WITH AND WITHOUT THREADING DISLOCATIONS, Applied physics letters, 73(7), 1998, pp. 975-977
Authors:
WATANABE H
HAYASHI K
TAKEUCHI D
YAMANAKA S
OKUSHI H
KAJIMURA K
SEKIGUCHI T
Citation: H. Watanabe et al., STRONG EXCITONIC RECOMBINATION RADIATION FROM HOMOEPITAXIAL DIAMOND THIN-FILMS AT ROOM-TEMPERATURE, Applied physics letters, 73(7), 1998, pp. 981-983
Authors:
CHATRAPHORN S
FLEET EF
BLACK RC
WELLSTOOD FC
Citation: S. Chatraphorn et al., MICROWAVE ELECTRIC-FIELD IMAGING USING A HIGH-T-C SCANNING SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE, Applied physics letters, 73(7), 1998, pp. 984-986
Citation: Y. Motoi et S. Ikegawa, INFLUENCE OF THE NUMBER OF DEPOSITED ATOMS PER SHUTTERING CYCLE ON SURFACE-MORPHOLOGY OF SEQUENTIALLY DEPOSITED PB2SR2EUCU3OY FILMS, Applied physics letters, 73(7), 1998, pp. 987-989
Citation: Lr. Narasimhan et al., FIELD-DEPENDENT MICROSUSCEPTOMETRY ON MAGNETIC CRYSTALLITES WITH INTEGRATED DC SQUID, Applied physics letters, 73(7), 1998, pp. 993-995
Citation: H. Schulze et al., NB AL/ALOX/ALOX/AL/NB JOSEPHSON-JUNCTIONS FOR PROGRAMMABLE VOLTAGE STANDARDS/, Applied physics letters, 73(7), 1998, pp. 996-998
Authors:
PIGNARD S
VINCENT H
SENATEUR JP
FROHLICH K
SOUC J
Citation: S. Pignard et al., EFFECT OF CRYSTALLINITY ON THE MAGNETORESISTIVE PROPERTIES OF LA0.8MNO3-DELTA THIN-FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 73(7), 1998, pp. 999-1001
Authors:
COHEN LF
DESILVA PSIPN
MALDE N
HOSSAIN AKMA
THOMAS KA
CHATER R
MACMANUSDRISCOLL JD
TATE T
MATHUR ND
BLAMIRE MG
EVETTS JE
Citation: Lf. Cohen et al., REENTRANT METAL-INSULATOR-TYPE TRANSITION INDUCED BY HIGH FLUENCE CHROMIUM ION-IMPLANTATION OF LA0.7CA0.3MNO3 THIN-FILMS, Applied physics letters, 73(7), 1998, pp. 1005-1007
Citation: Jz. Sun et al., TEMPERATURE AND BIAS DEPENDENCE OF MAGNETORESISTANCE IN DOPED MANGANITE THIN-FILM TRILAYER JUNCTIONS, Applied physics letters, 73(7), 1998, pp. 1008-1010
Citation: Aa. Kamshilin et al., ADAPTIVE CORRELATION FILTER FOR STABILIZATION OF INTERFERENCE-FIBER-OPTIC SENSORS, Applied physics letters, 73(6), 1998, pp. 705-707
Authors:
BROUWER HJ
KRASNIKOV VV
PHAM TA
GILL RE
HADZIIOANNOU G
Citation: Hj. Brouwer et al., STIMULATED-EMISSION FROM VACUUM-DEPOSITED THIN-FILMS OF A SUBSTITUTEDOLIGO(P-PHENYLENE VINYLENE), Applied physics letters, 73(6), 1998, pp. 708-710
Authors:
VURGAFTMAN I
MEYER JR
JULIEN FH
RAMMOHAN LR
Citation: I. Vurgaftman et al., DESIGN AND SIMULATION OF LOW-THRESHOLD ANTIMONIDE INTERSUBBAND LASERS, Applied physics letters, 73(6), 1998, pp. 711-713
Authors:
BODE M
SPIEKERMANN S
FALLNICH C
WELLING H
FREITAG I
Citation: M. Bode et al., ULTRAVIOLET SINGLE-FREQUENCY PULSES WITH 110 MW AVERAGE POWER USING FREQUENCY-CONVERTED PASSIVELY Q-SWITCHED MINIATURE ND-YAG RING LASERS, Applied physics letters, 73(6), 1998, pp. 714-716
Citation: E. Brundermann et al., TERAHERTZ EMISSION OF POPULATION-INVERTED HOT-HOLES IN SINGLE-CRYSTALLINE SILICON, Applied physics letters, 73(6), 1998, pp. 723-725