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Results: 1-17 |
Results: 17
IDENTIFICATION OF DEEP BANDGAP STATES IN 4H-SIC AND 6H-SIC BY RADIOTRACER DLTS AND PAC-SPECTROSCOPY
Authors: ACHTZIGER N FORKELWIRTH D GRILLENBERGER J LICHT T WITTHUHN W
Citation: N. Achtziger et al., IDENTIFICATION OF DEEP BANDGAP STATES IN 4H-SIC AND 6H-SIC BY RADIOTRACER DLTS AND PAC-SPECTROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 756-762
BAND-GAP STATES OF TI, V, AND CR IN 4H-SIC - IDENTIFICATION AND CHARACTERIZATION BY ELEMENTAL TRANSMUTATION OF RADIOACTIVE ISOTOPES
Authors: ACHTZIGER N WITTHUHN W
Citation: N. Achtziger et W. Witthuhn, BAND-GAP STATES OF TI, V, AND CR IN 4H-SIC - IDENTIFICATION AND CHARACTERIZATION BY ELEMENTAL TRANSMUTATION OF RADIOACTIVE ISOTOPES, Physical review. B, Condensed matter, 57(19), 1998, pp. 12181-12196
HYDROGEN PASSIVATION OF SILICON-CARBIDE BY LOW-ENERGY ION-IMPLANTATION
Authors: ACHTZIGER N GRILLENBERGER J WITTHUHN W
Citation: N. Achtziger et al., HYDROGEN PASSIVATION OF SILICON-CARBIDE BY LOW-ENERGY ION-IMPLANTATION, Applied physics letters, 73(7), 1998, pp. 945-947
BAND-GAP STATES OF V AND CR IN 6H-SILICON CARBIDE
Authors: ACHTZIGER N GRILLENBERGER J WITTHUHN W
Citation: N. Achtziger et al., BAND-GAP STATES OF V AND CR IN 6H-SILICON CARBIDE, Applied physics A: Materials science & processing, 65(3), 1997, pp. 329-331
HAFNIUM, CADMIUM AND INDIUM IMPURITIES IN 4H-SIC OBSERVED BY PERTURBED-ANGULAR-CORRELATION SPECTROSCOPY
Authors: LICHT T ACHTZIGER N FORKELWIRTH D FREITAG K GRILLENBERGER J KALTENHAUSER M REISLOHNER U RUB M UHRMACHER M WITTHUHN W
Citation: T. Licht et al., HAFNIUM, CADMIUM AND INDIUM IMPURITIES IN 4H-SIC OBSERVED BY PERTURBED-ANGULAR-CORRELATION SPECTROSCOPY, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1436-1439
DEEP LEVELS OF CHROMIUM IN 4H-SIC
Authors: ACHTZIGER N WITTHUHN W
Citation: N. Achtziger et W. Witthuhn, DEEP LEVELS OF CHROMIUM IN 4H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 333-335
BAND-GAP STATES OF TI, V, AND CR IN 4H SILICON-CARBIDE
Authors: ACHTZIGER N WITTHUHN W
Citation: N. Achtziger et W. Witthuhn, BAND-GAP STATES OF TI, V, AND CR IN 4H SILICON-CARBIDE, Applied physics letters, 71(1), 1997, pp. 110-112
DAMAGE PRODUCTION IN GAAS DURING MEV ION-IMPLANTATION
Authors: HERRE O WENDLER E ACHTZIGER N LICHT T REISLOHNER U RUB M BACHMANN T WESCH W GAIDUK PI KOMAROV FF
Citation: O. Herre et al., DAMAGE PRODUCTION IN GAAS DURING MEV ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 230-235
INVESTIGATION OF DEFECTS IN KTIOPO4 AFTER INDIUM IMPLANTATION AND DIFFUSION
Authors: RUB M ACHTZIGER N LICHT T REISLOHNER U WITTHUHN W
Citation: M. Rub et al., INVESTIGATION OF DEFECTS IN KTIOPO4 AFTER INDIUM IMPLANTATION AND DIFFUSION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 502-506
COMPLEX-FORMATION AT INDIUM DONORS IN P-CDTE
Authors: REISLOHNER U ACHTZIGER N RUB M WITTHUHN W
Citation: U. Reislohner et al., COMPLEX-FORMATION AT INDIUM DONORS IN P-CDTE, Journal of crystal growth, 159(1-4), 1996, pp. 372-375
SCANDIUM CORRELATED DEEP LEVELS IN SILICON
Authors: ACHTZIGER N
Citation: N. Achtziger, SCANDIUM CORRELATED DEEP LEVELS IN SILICON, Journal of applied physics, 80(11), 1996, pp. 6286-6292
HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY
Authors: FORKELWIRTH D ACHTZIGER N BURCHARD A CORREIA JC DEICHER M LICHT T MAGERLE R MARQUES JG MEIER J PFEIFFER W REISLOHNER U RUB M TOULEMONDE M WITTHUHN W
Citation: D. Forkelwirth et al., HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY, Solid state communications, 93(5), 1995, pp. 425-430
COMBINED PAC, C-V AND DLTS MEASUREMENTS ON P-CDTE
Authors: REISLOHNER U ACHTZIGER N RUB M WIENECKE M WITTHUHN W
Citation: U. Reislohner et al., COMBINED PAC, C-V AND DLTS MEASUREMENTS ON P-CDTE, Solid state communications, 93(5), 1995, pp. 462-463
IDENTIFICATION OF SE2 AND SE-AS PAIRS IN SILICON BY ELEMENTAL TRANSMUTATION
Authors: ACHTZIGER N WITTHUHN W
Citation: N. Achtziger et W. Witthuhn, IDENTIFICATION OF SE2 AND SE-AS PAIRS IN SILICON BY ELEMENTAL TRANSMUTATION, Physical review letters, 75(24), 1995, pp. 4484-4487
RECOIL IMPLANTATION OF RADIOACTIVE TRANSITION-METALS AND THEIR INVESTIGATION IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: ACHTZIGER N GOTTSCHALK H LICHT T MEIER J RUB M REISLOHNER U WITTHUHN W
Citation: N. Achtziger et al., RECOIL IMPLANTATION OF RADIOACTIVE TRANSITION-METALS AND THEIR INVESTIGATION IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics letters, 66(18), 1995, pp. 2370-2372
COMPLEX-FORMATION IN IN-DOPED AND AG CU-DOPED CDTE/
Authors: RUB M ACHTZIGER N MEIER J REISLOHNER U RUDOLPH P WIENECKE M WITTHUHN W
Citation: M. Rub et al., COMPLEX-FORMATION IN IN-DOPED AND AG CU-DOPED CDTE/, Journal of crystal growth, 138(1-4), 1994, pp. 285-289
ANNEALING BEHAVIOR OF IN IMPURITIES IN SIC AFTER ION-IMPLANTATION
Authors: MEIER J ACHTZIGER N LICHT T UHRMACHER M WITTHUHN W
Citation: J. Meier et al., ANNEALING BEHAVIOR OF IN IMPURITIES IN SIC AFTER ION-IMPLANTATION, Physica. B, Condensed matter, 185(1-4), 1993, pp. 207-210
Risultati: 1-17 |