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Results: 1-25 | 26-35
Results: 1-25/35
PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION
Authors: CHARBONNEAU S KOTELES ES POOLE PJ HE JJ AERS GC HAYSOM J BUCHANAN M FENG Y DELAGE A YANG F DAVIES M GOLDBERG RD PIVA PG MITCHELL IV
Citation: S. Charbonneau et al., PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 772-793
PHOTOLUMINESCENCE IN UHV-CVD-GROWN SI1-XGEX QUANTUM-WELLS ON SI(100) - BAND ALIGNMENT VARIATION WITH EXCITATION DENSITY AND APPLIED UNIAXIAL-STRESS
Authors: ROWELL NL AERS GC LAFONTAINE H WILLIAMS RL
Citation: Nl. Rowell et al., PHOTOLUMINESCENCE IN UHV-CVD-GROWN SI1-XGEX QUANTUM-WELLS ON SI(100) - BAND ALIGNMENT VARIATION WITH EXCITATION DENSITY AND APPLIED UNIAXIAL-STRESS, Thin solid films, 321, 1998, pp. 158-162
STRUCTURAL CHARACTERIZATION OF A UHV CVD-GROWN SIGE HBT WITH GRADED BASE/
Authors: DION M HOUGHTON DC ROWELL NL PEROVIC DD AERS GC ROLFE SJ SPROULE GI PHILLIPS JR
Citation: M. Dion et al., STRUCTURAL CHARACTERIZATION OF A UHV CVD-GROWN SIGE HBT WITH GRADED BASE/, Thin solid films, 321, 1998, pp. 167-171
A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/
Authors: PIVA PG GOLDBERG RD MITCHELL IV CHEN HJ FEENSTRA RM WEATHERLY GC MCCOMB DW AERS GC POOLE PJ CHARBONNEAU S
Citation: Pg. Piva et al., A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/, Applied physics letters, 72(13), 1998, pp. 1599-1601
BAND ALIGNMENT IN SI1-YCY SI(001) HETEROSTRUCTURES/
Authors: WILLIAMS RL AERS GC ROELL NL BRUNNER K WINTER W EBERL K
Citation: Rl. Williams et al., BAND ALIGNMENT IN SI1-YCY SI(001) HETEROSTRUCTURES/, Applied physics letters, 72(11), 1998, pp. 1320-1322
INTRINSIC ELECTRIC-FIELDS IN SILICON
Authors: SIMPSON PJ KNIGHTS AP GOLDBERG RD AERS GC LANDHEER D
Citation: Pj. Simpson et al., INTRINSIC ELECTRIC-FIELDS IN SILICON, Applied surface science, 116, 1997, pp. 211-214
ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS
Authors: GOLDBERG RD MITCHELL IV POOLE P LABRIE D LAFONTAINE H AERS GC WILLIAMS R DION M CHARBONNEAU S RAMANUJANCHA K WEATHERLY GC
Citation: Rd. Goldberg et al., ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 418-422
BAND ALIGNMENT IN SI1-YCY SI(001) AND SI1-XGEX/SI1-YCY/SI(001) QUANTUM-WELLS BY PHOTOLUMINESCENCE UNDER APPLIED [100] AND [110] UNIAXIAL-STRESS/
Authors: HOUGHTON DC AERS GC ROWELL NL BRUNNER K WINTER W EBERL K
Citation: Dc. Houghton et al., BAND ALIGNMENT IN SI1-YCY SI(001) AND SI1-XGEX/SI1-YCY/SI(001) QUANTUM-WELLS BY PHOTOLUMINESCENCE UNDER APPLIED [100] AND [110] UNIAXIAL-STRESS/, Physical review letters, 78(12), 1997, pp. 2441-2444
DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER
Authors: POOLE PJ CHARBONNEAU S DION M AERS GC BUCHANAN M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER, IEEE photonics technology letters, 8(1), 1996, pp. 16-18
STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GAXIN1-XASYP1-Y QUANTUM-WELLS AND INTERFACIAL LAYERS/
Authors: ROTH AP LEVESQUE P SYME RWG LOCKWOOD DJ AERS GC RAO TS LACELLE C
Citation: Ap. Roth et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GAXIN1-XASYP1-Y QUANTUM-WELLS AND INTERFACIAL LAYERS/, Journal of applied physics, 80(7), 1996, pp. 4033-4039
POSITRON BEAM STUDY OF ANNEALED SILICON-NITRIDE FILMS
Authors: LANDHEER D AERS GC SPROULE GI LAWTHER DW SIMPSON PJ MASSOUMI GR TONG SY
Citation: D. Landheer et al., POSITRON BEAM STUDY OF ANNEALED SILICON-NITRIDE FILMS, Journal of applied physics, 79(5), 1996, pp. 2458-2462
POLARIZATION-INSENSITIVE INGAAS INGAASP/INP AMPLIFIERS USING QUANTUM-WELL INTERMIXING/
Authors: HE JJ CHARBONNEAU S POOLE PJ AERS GC FENG Y KOTELES ES GOLDBERG RD MITCHELL IV
Citation: Jj. He et al., POLARIZATION-INSENSITIVE INGAAS INGAASP/INP AMPLIFIERS USING QUANTUM-WELL INTERMIXING/, Applied physics letters, 69(4), 1996, pp. 562-564
EFFECTS OF LOW-TEMPERATURE PREANNEALING ON ION-IMPLANT ASSISTED INTERMIXING OF SI1-XGEX SI QUANTUM-WELLS/
Authors: LABRIE D AERS GC LAFONTAINE H WILLIAMS RL CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: D. Labrie et al., EFFECTS OF LOW-TEMPERATURE PREANNEALING ON ION-IMPLANT ASSISTED INTERMIXING OF SI1-XGEX SI QUANTUM-WELLS/, Applied physics letters, 69(25), 1996, pp. 3866-3868
PHOTOLUMINESCENCE STUDY OF INITIAL INTERDIFFUSION OF SIGE SI QUANTUM-WELLS GROWN BY ULTRAHIGH VACUUM-CHEMICAL VAPOR-DEPOSITION/
Authors: LAFONTAINE H HOUGHTON DC ROWELL NL AERS GC
Citation: H. Lafontaine et al., PHOTOLUMINESCENCE STUDY OF INITIAL INTERDIFFUSION OF SIGE SI QUANTUM-WELLS GROWN BY ULTRAHIGH VACUUM-CHEMICAL VAPOR-DEPOSITION/, Applied physics letters, 69(10), 1996, pp. 1444-1446
ELECTRICAL AND STRUCTURAL-PROPERTIES OF PTSI FILMS IN DEEP-SUBMICRON LINES
Authors: XU DX MCCAFFREY JP DAS SR AERS GC ERICKSON LE
Citation: Dx. Xu et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF PTSI FILMS IN DEEP-SUBMICRON LINES, Applied physics letters, 68(25), 1996, pp. 3588-3590
DEFECT PROFILING IN MULTILAYERED SYSTEMS USING MEAN DEPTH SCALING
Authors: AERS GC MARSHALL PA LEUNG TC GOLDBERG RD
Citation: Gc. Aers et al., DEFECT PROFILING IN MULTILAYERED SYSTEMS USING MEAN DEPTH SCALING, Applied surface science, 85(1-4), 1995, pp. 196-209
SHOT-NOISE SUPPRESSION IN RESONANT-TUNNELING
Authors: LIU HC LI JM AERS GC LEAVENS CR BUCHANAN M WASILEWSKI ZR
Citation: Hc. Liu et al., SHOT-NOISE SUPPRESSION IN RESONANT-TUNNELING, Physical review. B, Condensed matter, 51(8), 1995, pp. 5116-5120
POSITRON STOPPING IN ELEMENTAL SYSTEMS - MONTE-CARLO CALCULATIONS ANDSCALING PROPERTIES
Authors: GHOSH VJ AERS GC
Citation: Vj. Ghosh et Gc. Aers, POSITRON STOPPING IN ELEMENTAL SYSTEMS - MONTE-CARLO CALCULATIONS ANDSCALING PROPERTIES, Physical review. B, Condensed matter, 51(1), 1995, pp. 45-59
TYPE-I BAND ALIGNMENT IN SI1-XGEX SI(001) QUANTUM-WELLS - PHOTOLUMINESCENCE UNDER APPLIED [110] AND [100] UNIAXIAL-STRESS/
Authors: HOUGHTON DC AERS GC YANG SRE WANG E ROWELL NL
Citation: Dc. Houghton et al., TYPE-I BAND ALIGNMENT IN SI1-XGEX SI(001) QUANTUM-WELLS - PHOTOLUMINESCENCE UNDER APPLIED [110] AND [100] UNIAXIAL-STRESS/, Physical review letters, 75(5), 1995, pp. 866-869
SURFACE-STRUCTURE, LATTICE-DYNAMICS, AND RAMAN-SPECTROSCOPY OF SULFURPASSIVATED INP(001)
Authors: JIN JM DHARMAWARDANA MWC LOCKWOOD DJ AERS GC LU ZH LEWIS LJ
Citation: Jm. Jin et al., SURFACE-STRUCTURE, LATTICE-DYNAMICS, AND RAMAN-SPECTROSCOPY OF SULFURPASSIVATED INP(001), Physical review letters, 75(5), 1995, pp. 878-881
STOPPING POWERS FOR POSITRONS AND ELECTRONS
Authors: LENNARD WN MASSOUMI GR SCHULTZ PJ SIMPSON PJ AERS GC
Citation: Wn. Lennard et al., STOPPING POWERS FOR POSITRONS AND ELECTRONS, Physical review letters, 74(20), 1995, pp. 3947-3950
PHOTOLUMINESCENCE STUDY OF SIGE QUANTUM-WELL BROADENING BY RAPID THERMAL ANNEALING
Authors: LAFONTAINE H HOUGHTON DC ROWELL N AERS GC RINFRET R
Citation: H. Lafontaine et al., PHOTOLUMINESCENCE STUDY OF SIGE QUANTUM-WELL BROADENING BY RAPID THERMAL ANNEALING, Journal of crystal growth, 157(1-4), 1995, pp. 57-60
QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION
Authors: CHARBONNEAU S POOLE PJ PIVA PG AERS GC KOTELES ES FALLAHI M HE JJ MCCAFFREY JP BUCHANAN M DION M GOLDBERG RD MITCHELL IV
Citation: S. Charbonneau et al., QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION, Journal of applied physics, 78(6), 1995, pp. 3697-3705
DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING
Authors: POOLE PJ CHARBONNEAU S AERS GC JACKMAN TE BUCHANAN M DION M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING, Journal of applied physics, 78(4), 1995, pp. 2367-2371
POSITRON STUDY OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FILMS
Authors: LANDHEER D AERS GC SPROULE GI KHATRI R SIMPSON PJ GUJRATHI SC
Citation: D. Landheer et al., POSITRON STUDY OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FILMS, Journal of applied physics, 78(4), 1995, pp. 2568-2574
Risultati: 1-25 | 26-35