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Results: 1-25/56
Authors:
AFANASEV VV
USHAKOV OK
SHLISHEVSKII VB
Citation: Vv. Afanasev et al., TECHNIQUE OF CONSTRUCTING NEW 2-DIMENSIONAL RASTERS, Journal of optical technology, 65(9), 1998, pp. 709-711
Authors:
AFANASEV VV
POLSKII YE
CHERNYAVSKII VS
Citation: Vv. Afanasev et al., QUALITATIVE-ANALYSIS OF THE BEHAVIOR OF A LORENZ DYNAMIC SYSTEM BASEDON GEOMETRIC CONCEPTS, Technical physics letters, 24(7), 1998, pp. 575-576
Authors:
STESMANS A
NOUWEN B
AFANASEV VV
Citation: A. Stesmans et al., SI-29 HYPERFINE-STRUCTURE OF THE P-B1 INTERFACE DEFECT IN THERMAL (100)SI SIO2/, Journal of physics. Condensed matter, 10(27), 1998, pp. 465-472
Authors:
STESMANS A
AFANASEV VV
REVESZ AG
Citation: A. Stesmans et al., BLOCKING OF THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 BY HE/, Journal of physics. Condensed matter, 10(22), 1998, pp. 367-371
Authors:
STESMANS A
AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, UNDETECTABILITY OF THE P-B1 POINT-DEFECT AS AN INTERFACE STATE IN THERMAL (100)SI SIO2/, Journal of physics. Condensed matter, 10(1), 1998, pp. 19-25
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, POSITIVELY CHARGED BONDED STATES OF HYDROGEN AT THE (111)SI SIO2 INTERFACE/, Journal of physics. Condensed matter, 10(1), 1998, pp. 89-93
Authors:
STESMANS A
AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, ELECTRICAL-ACTIVITY OF INTERFACIAL PARAMAGNETIC DEFECTS IN THERMAL (100)-SI SIO2/, Physical review. B, Condensed matter, 57(16), 1998, pp. 10030-10034
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, HYDROGEN-INDUCED VALENCE ALTERNATION STATE AT SIO2 INTERFACES, Physical review letters, 80(23), 1998, pp. 5176-5179
Authors:
STESMANS A
AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, ELECTRON-SPIN-RESONANCE FEATURES OF INTERFACE DEFECTS IN THERMAL (100)SI SIO2/, Journal of applied physics, 83(5), 1998, pp. 2449-2457
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., OXYGEN VACANCIES IN SIO2, LAYERS AN SI PRODUCED AT HIGH-TEMPERATURE, Journal of the Electrochemical Society, 145(9), 1998, pp. 3157-3160
HYDROGEN-INDUCED THERMAL INTERFACE DEGRADATION IN (111) SI SIO2 REVEALED BY ELECTRON-SPIN-RESONANCE/
Authors:
STESMANS A
AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, HYDROGEN-INDUCED THERMAL INTERFACE DEGRADATION IN (111) SI SIO2 REVEALED BY ELECTRON-SPIN-RESONANCE/, Applied physics letters, 72(18), 1998, pp. 2271-2273
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, POSITIVE CHARGING OF THERMAL SIO2 (100)SI INTERFACE BY HYDROGEN ANNEALING/, Applied physics letters, 72(1), 1998, pp. 79-81
Authors:
AFANASEV VV
POLSKII YE
CHERNYAVSKII VS
Citation: Vv. Afanasev et al., APPLICATION OF MELNIKOVS METHOD FOR ESTIMATING THE EFFICACY OF EXTERNAL SIGNALS ON COMPLEX NONLINEAR-SYSTEMS WITH STRANGE ATTRACTORS, Technical physics letters, 23(12), 1997, pp. 917-919
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, PHOTON-STIMULATED TUNNELING OF ELECTRONS IN SIO2 - EVIDENCE FOR A DEFECT-ASSISTED PROCESS, Journal of physics. Condensed matter, 9(6), 1997, pp. 55-60
Authors:
STESMANS A
AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT - REPLY/, Journal of physics. Condensed matter, 9(15), 1997, pp. 3299-3301
Authors:
AFANASEV VV
Citation: Vv. Afanasev, MODELING THE SHAPING CHANNELS OF AUTOCOMPENSATION SYSTEMS, Measurement techniques, 40(8), 1997, pp. 727-732
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, ANALYSIS OF NEAR-INTERFACIAL SIO2 TRAPS USING PHOTON-STIMULATED ELECTRON-TUNNELING, Microelectronic engineering, 36(1-4), 1997, pp. 149-152
Authors:
HARRIS CI
AFANASEV VV
Citation: Ci. Harris et Vv. Afanasev, SIO2 AS AN INSULATOR FOR SIC DEVICES, Microelectronic engineering, 36(1-4), 1997, pp. 167-174
Authors:
STESMANS A
AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, POINT-DEFECT GENERATION IN SIO2 BY INTERACTION WITH SIO AT ELEVATED-TEMPERATURES, Microelectronic engineering, 36(1-4), 1997, pp. 201-204
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, INTERFACIAL DEFECTS IN SIO2 REVEALED BY PHOTON-STIMULATED TUNNELING OF ELECTRONS, Physical review letters, 78(12), 1997, pp. 2437-2440
Authors:
AFANASEV VV
BASSLER M
PENSL G
SCHULZ M
Citation: Vv. Afanasev et al., INTRINSIC SIC SIO2 INTERFACE STATES, Physica status solidi. a, Applied research, 162(1), 1997, pp. 321-337
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., STRUCTURAL INHOMOGENEITY AND SILICON ENRICHMENT OF BURIED SIO2 LAYERSFORMED BY OXYGEN-ION IMPLANTATION IN SILICON, Journal of applied physics, 82(5), 1997, pp. 2184-2199
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., TRAP GENERATION IN BURIED OXIDES OF SILICON-ON-INSULATOR STRUCTURES BY VACUUM-ULTRAVIOLET RADIATION, Journal of the Electrochemical Society, 144(2), 1997, pp. 749-753
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, H-COMPLEXED OXYGEN VACANCY IN SIO2 - ENERGY-LEVEL OF A NEGATIVELY CHARGED STATE, Applied physics letters, 71(26), 1997, pp. 3844-3846
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., MECHANISM OF SI ISLAND RETENTION IN BURIED SIO2 LAYERS FORMED BY OXYGEN-ION IMPLANTATION, Applied physics letters, 71(15), 1997, pp. 2106-2108