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Results: 1-25/44
Authors:
GOODMAN SA
AURET FD
DEENAPANRAY PNK
MYBURG G
Citation: Sa. Goodman et al., ELECTRICAL-PROPERTIES OF SC SCHOTTKY-BARRIER DIODES FABRICATED ON ARGON-ION SPUTTERED P-GAAS, JPN J A P 2, 37(1AB), 1998, pp. 10-12
Authors:
DEENAPANRAY PNK
AURET FD
MYBURG G
Citation: Pnk. Deenapanray et al., ELECTRICAL CHARACTERIZATION AND ANNEALING BEHAVIOR OF DEFECT INTRODUCED IN SI DURING SPUTTER ETCHING IN AN AR PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1873-1880
Authors:
NEL JM
DEMANET CM
HILLIE KT
AURET FD
GAIGHER HL
Citation: Jm. Nel et al., USING SCANNING FORCE MICROSCOPY (SFM) TO INVESTIGATE VARIOUS CLEANINGPROCEDURES OF DIFFERENT TRANSPARENT CONDUCTING OXIDE SUBSTRATES, Applied surface science, 134(1-4), 1998, pp. 22-30
Authors:
DEENAPANRAY PNK
RIDGWAY MC
AURET FD
FRIEDLAND E
Citation: Pnk. Deenapanray et al., A DLTS AND RBS ANALYSIS OF THE ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN SI DURING ION-BEAM CHANNELING USING 435 KEV ALPHA-PARTICLES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1322-1326
Authors:
DEENAPANRAY PNK
AURET FD
MYBURG G
HILLIE KT
DEMANET CM
Citation: Pnk. Deenapanray et al., ATOMIC-FORCE MICROSCOPY STUDY OF SI(111) SURFACE-MORPHOLOGY AND ELECTRICAL CHARACTERISTICS OF PD N-SI SCHOTTKY DIODES - EFFECT OF CLEANING PROCEDURES/, Surface and interface analysis, 26(10), 1998, pp. 748-757
Authors:
MYBURG G
AURET FD
MEYER WE
LOUW CW
VANSTADEN MJ
Citation: G. Myburg et al., SUMMARY OF SCHOTTKY-BARRIER HEIGHT DATA ON EPITAXIALLY GROWN N-GAAS AND P-GAAS, Thin solid films, 325(1-2), 1998, pp. 181-186
Authors:
DEENAPANRAY PNK
AURET FD
RIDGWAY MC
GOODMAN SA
MYBURG G
MALHERBE JB
Citation: Pnk. Deenapanray et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI, Journal of applied physics, 84(5), 1998, pp. 2565-2570
Authors:
AURET FD
MEYER WE
DEENAPANRAY PNK
GOODMAN SA
MYBURG G
MURTAGH M
YE SR
CREAN GM
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF HE-PLASMA PROCESSED N-GAAS, Journal of applied physics, 84(4), 1998, pp. 1973-1976
Authors:
DEENAPANRAY PNK
PERRET NE
BRINK DJ
AURET FD
MALHERBE JB
Citation: Pnk. Deenapanray et al., CHARACTERIZATION OF OPTICALLY-ACTIVE DEFECTS CREATED BY NOBLE-GAS ION-BOMBARDMENT OF SILICON, Journal of applied physics, 83(8), 1998, pp. 4075-4080
Authors:
AURET FD
DEENAPANRAY PNK
GOODMAN SA
MEYER WE
MYBURG G
Citation: Fd. Auret et al., A DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF DEFECTS INDUCED IN EPITAXIALLY GROWN N-SI BY LOW-ENERGY HE-ION BOMBARDMENT, Journal of applied physics, 83(10), 1998, pp. 5576-5578
Authors:
GOODMAN SA
AURET FD
MAMOR M
GREINER A
Citation: Sa. Goodman et al., ELECTRONIC-PROPERTIES OF DEFECTS INTRODUCED IN P-TYPE SI1-XGEX DURINGION ETCHING, Applied physics letters, 73(2), 1998, pp. 256-258
Authors:
MAMOR M
AURET FD
GOODMAN SA
MYBURG G
Citation: M. Mamor et al., ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN P-SI1-XGEX DURING ELECTRON-BEAM DEPOSITION OF SC SCHOTTKY-BARRIER DIODES, Applied physics letters, 72(9), 1998, pp. 1069-1071
Authors:
MAMOR M
AURET FD
GOODMAN SA
MEYER WE
MYBURG G
Citation: M. Mamor et al., ELECTRONIC AND TRANSFORMATION PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN EPITAXIALLY GROWN BORON-DOPED P-TYPE SI BY ALPHA-PARTICLE IRRADIATION, Applied physics letters, 72(24), 1998, pp. 3178-3180
Authors:
GOODMAN SA
AURET FD
Citation: Sa. Goodman et Fd. Auret, DEFECT CHARACTERIZATION OF SPUTTER-DEPOSITED AU CONTACTS ON N-TYPE SI1-XGEX, JPN J A P 1, 36(2), 1997, pp. 633-637
Authors:
GOODMAN SA
AURET FD
NAUKA K
MALHERBE JB
Citation: Sa. Goodman et al., DEFECT CHARACTERIZATION OF N-TYPE SI1-XGEX AFTER 1.0 KEV HELIUM-ION ETCHING, Journal of electronic materials, 26(5), 1997, pp. 463-469
Authors:
AURET FD
GOODMAN SA
LECLERC Y
MYBURG G
SCHUTTE C
Citation: Fd. Auret et al., ELECTRONIC-PROPERTIES OF DEFECTS INTRODUCED IN GAAS DURING SPUTTER-DEPOSITION OF GOLD SCHOTTKY CONTACTS, Materials science and technology, 13(11), 1997, pp. 945-948
Authors:
AURET FD
HAYES M
DEENAPANRAY PNK
RIDGWAY M
Citation: Fd. Auret et al., ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN GAAS BY ALPHA-PARTICLE BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 112-114
Authors:
AURET FD
DEENAPANRAY PNK
GOODMAN SA
MALHERBE JB
MEYER WE
MYBURG G
HAYES M
Citation: Fd. Auret et al., ELECTRONIC-PROPERTIES OF DEFECTS CREATED IN EPITAXIALLY GROWN N-SI BYLOW-ENERGY HE AND AR IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 393-396
Authors:
AURET FD
MYBURG G
MEYER WE
DEENAPANRAY PNK
NORDHOFF H
GOODMAN SA
MURTAGH M
YE SR
CREAN GM
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF DEFECTS IN SICL4 PLASMA-ETCHED N-GAAS AND PD SCHOTTKY DIODES FABRICATED ON IT, Applied physics letters, 71(5), 1997, pp. 668-670
Authors:
MEYER WE
AURET FD
GOODMAN SA
Citation: We. Meyer et al., ELECTRIC-FIELD ENHANCED EMISSION FROM 2 ALPHA-PARTICLE IRRADIATION-INDUCED TRAPS IN N-GAAS, JPN J A P 2, 35(1A), 1996, pp. 1-3
Authors:
BARNARD WO
MYBURG G
AURET FD
GOODMAN SA
MEYER WE
Citation: Wo. Barnard et al., METAL CONTACTS TO GALLIUM-ARSENIDE, Journal of electronic materials, 25(11), 1996, pp. 1695-1702
Authors:
AURET FD
GOODMAN SA
Citation: Fd. Auret et Sa. Goodman, ELECTRONIC-PROPERTIES OF DEFECTS INTRODUCED DURING LOW-ENERGY HE-ION BOMBARDMENT OF EPITAXIALLY GROWN N-GAAS, Applied physics letters, 68(23), 1996, pp. 3275-3277
Authors:
AURET FD
GOODMAN SA
MEYER WE
Citation: Fd. Auret et al., ELECTRIC-FIELD-ENHANCED EMISSION FROM RADIATION-INDUCED HOLE TRAPS INP-GAAS, Semiconductor science and technology, 10(10), 1995, pp. 1376-1381
Authors:
AURET FD
GOODMAN SA
ERASMUS RM
MEYER WE
MYBURG G
Citation: Fd. Auret et al., ELECTRONIC AND ANNEALING PROPERTIES OF A METASTABLE HE-ION IMPLANTATION-INDUCED DEFECT IN GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 323-327
Authors:
AURET FD
ERASMUS RM
GOODMAN SA
MEYER WE
Citation: Fd. Auret et al., ELECTRONIC AND TRANSFORMATION PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN N-TYPE GAAS BY ALPHA-PARTICLE IRRADIATION, Physical review. B, Condensed matter, 51(24), 1995, pp. 17521-17525