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DEENAPANRAY PNK
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NEL JM
DEMANET CM
HILLIE KT
AURET FD
GAIGHER HL
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DEENAPANRAY PNK
RIDGWAY MC
AURET FD
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Citation: Pnk. Deenapanray et al., A DLTS AND RBS ANALYSIS OF THE ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN SI DURING ION-BEAM CHANNELING USING 435 KEV ALPHA-PARTICLES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1322-1326
Authors:
DEENAPANRAY PNK
AURET FD
MYBURG G
HILLIE KT
DEMANET CM
Citation: Pnk. Deenapanray et al., ATOMIC-FORCE MICROSCOPY STUDY OF SI(111) SURFACE-MORPHOLOGY AND ELECTRICAL CHARACTERISTICS OF PD N-SI SCHOTTKY DIODES - EFFECT OF CLEANING PROCEDURES/, Surface and interface analysis, 26(10), 1998, pp. 748-757
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MYBURG G
AURET FD
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Authors:
DEENAPANRAY PNK
AURET FD
RIDGWAY MC
GOODMAN SA
MYBURG G
MALHERBE JB
Citation: Pnk. Deenapanray et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI, Journal of applied physics, 84(5), 1998, pp. 2565-2570
Authors:
DEENAPANRAY PNK
PERRET NE
BRINK DJ
AURET FD
MALHERBE JB
Citation: Pnk. Deenapanray et al., CHARACTERIZATION OF OPTICALLY-ACTIVE DEFECTS CREATED BY NOBLE-GAS ION-BOMBARDMENT OF SILICON, Journal of applied physics, 83(8), 1998, pp. 4075-4080
Authors:
AURET FD
DEENAPANRAY PNK
GOODMAN SA
MEYER WE
MYBURG G
Citation: Fd. Auret et al., A DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF DEFECTS INDUCED IN EPITAXIALLY GROWN N-SI BY LOW-ENERGY HE-ION BOMBARDMENT, Journal of applied physics, 83(10), 1998, pp. 5576-5578
Citation: Sa. Goodman et al., ELECTRONIC-PROPERTIES OF DEFECTS INTRODUCED IN P-TYPE SI1-XGEX DURINGION ETCHING, Applied physics letters, 73(2), 1998, pp. 256-258
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MAMOR M
AURET FD
GOODMAN SA
MEYER WE
MYBURG G
Citation: M. Mamor et al., ELECTRONIC AND TRANSFORMATION PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN EPITAXIALLY GROWN BORON-DOPED P-TYPE SI BY ALPHA-PARTICLE IRRADIATION, Applied physics letters, 72(24), 1998, pp. 3178-3180
Citation: Sa. Goodman et al., DEFECT CHARACTERIZATION OF N-TYPE SI1-XGEX AFTER 1.0 KEV HELIUM-ION ETCHING, Journal of electronic materials, 26(5), 1997, pp. 463-469
Authors:
AURET FD
GOODMAN SA
LECLERC Y
MYBURG G
SCHUTTE C
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DEENAPANRAY PNK
GOODMAN SA
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MEYER WE
MYBURG G
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AURET FD
MYBURG G
MEYER WE
DEENAPANRAY PNK
NORDHOFF H
GOODMAN SA
MURTAGH M
YE SR
CREAN GM
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Citation: Fd. Auret et Sa. Goodman, ELECTRONIC-PROPERTIES OF DEFECTS INTRODUCED DURING LOW-ENERGY HE-ION BOMBARDMENT OF EPITAXIALLY GROWN N-GAAS, Applied physics letters, 68(23), 1996, pp. 3275-3277
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AURET FD
GOODMAN SA
ERASMUS RM
MEYER WE
MYBURG G
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