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Results: 1-25/37
Authors:
HERTEL T
MARTEL R
AVOURIS P
Citation: T. Hertel et al., MANIPULATION OF INDIVIDUAL CARBON NANOTUBES AND THEIR INTERACTION WITH SURFACES, JOURNAL OF PHYSICAL CHEMISTRY B, 102(6), 1998, pp. 910-915
Authors:
AVOURIS P
MARTEL R
HERTEL T
SANDSTROM R
Citation: P. Avouris et al., AFM-TIP-INDUCED AND CURRENT-INDUCED LOCAL OXIDATION OF SILICON AND METALS, Applied physics A: Materials science & processing, 66, 1998, pp. 659-667
Authors:
LYDING JW
HESS K
ABELN GC
THOMPSON DS
MOORE JS
HERSAM MC
FOLEY ET
LEE J
CHEN Z
HWANG ST
CHOI H
AVOURIS P
KIZILYALLI IC
Citation: Jw. Lyding et al., ULTRAHIGH VACUUM-SCANNING TUNNELING MICROSCOPY NANOFABRICATION AND HYDROGEN DEUTERIUM DESORPTION FROM SILICON SURFACES - IMPLICATIONS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY/, Applied surface science, 132, 1998, pp. 221-230
Authors:
AKPATI HC
NORDLANDER P
LOU L
AVOURIS P
Citation: Hc. Akpati et al., A DENSITY-FUNCTIONAL STUDY OF THE EFFECTS OF AN EXTERNAL ELECTRIC-FIELD ON ADMOLECULE-SURFACE SYSTEMS, Surface science, 401(1), 1998, pp. 47-55
Authors:
LANG ND
AVOURIS P
Citation: Nd. Lang et P. Avouris, OSCILLATORY CONDUCTANCE OF CARBON-ATOM WIRES, Physical review letters, 81(16), 1998, pp. 3515-3518
Authors:
FOLEY ET
KAM AF
LYDING JW
AVOURIS P
Citation: Et. Foley et al., CRYOGENIC UHV-STM STUDY OF HYDROGEN AND DEUTERIUM DESORPTION FROM SI(100), Physical review letters, 80(6), 1998, pp. 1336-1339
Authors:
ROCHEFORT A
SALAHUB DR
AVOURIS P
Citation: A. Rochefort et al., THE EFFECT OF STRUCTURAL DISTORTIONS ON THE ELECTRONIC-STRUCTURE OF CARBON NANOTUBES, Chemical physics letters, 297(1-2), 1998, pp. 45-50
Authors:
MARTEL R
SCHMIDT T
SHEA HR
HERTEL T
AVOURIS P
Citation: R. Martel et al., SINGLE-WALL AND MULTI-WALL CARBON NANOTUBE FIELD-EFFECT TRANSISTORS, Applied physics letters, 73(17), 1998, pp. 2447-2449
Authors:
SCHMIDT T
MARTEL R
SANDSTROM RL
AVOURIS P
Citation: T. Schmidt et al., CURRENT-INDUCED LOCAL OXIDATION OF METAL-FILMS - MECHANISM AND QUANTUM-SIZE EFFECTS, Applied physics letters, 73(15), 1998, pp. 2173-2175
Authors:
HASEGAWA Y
LYO IW
AVOURIS P
Citation: Y. Hasegawa et al., STM STUDY ON 2-DIMENSIONAL ELECTRONIC SYSTEM LOCALIZED ON SURFACES, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 44(1), 1997, pp. 99-104
Authors:
SHEN TC
AVOURIS P
Citation: Tc. Shen et P. Avouris, ELECTRON-STIMULATED DESORPTION INDUCED BY THE SCANNING TUNNELING MICROSCOPE, Surface science, 390(1-3), 1997, pp. 35-44
Authors:
PERSSON BNJ
AVOURIS P
Citation: Bnj. Persson et P. Avouris, LOCAL BOND BREAKING VIA STM-INDUCED EXCITATIONS - THE ROLE OF TEMPERATURE, Surface science, 390(1-3), 1997, pp. 45-54
Authors:
AKPATI HC
NORDLANDER P
LOU L
AVOURIS P
Citation: Hc. Akpati et al., THE EFFECTS OF AN EXTERNAL ELECTRIC-FIELD ON THE ADATOM-SURFACE BOND - H AND AL ADSORBED ON SI(111), Surface science, 372(1-3), 1997, pp. 9-20
Authors:
AVOURIS P
HERTEL T
MARTEL R
Citation: P. Avouris et al., ATOMIC-FORCE MICROSCOPE TIP-INDUCED LOCAL OXIDATION OF SILICON - KINETICS, MECHANISM, AND NANOFABRICATION, Applied physics letters, 71(2), 1997, pp. 285-287
Authors:
AVOURIS P
WALKUP RE
ROSSI AR
AKPATI HC
NORDLANDER P
SHEN TC
ABELN GC
LYDING JW
Citation: P. Avouris et al., BREAKING INDIVIDUAL CHEMICAL-BONDS VIA STM-INDUCED EXCITATIONS, Surface science, 363(1-3), 1996, pp. 368-377
Authors:
HASEGAWA Y
LYO IW
AVOURIS P
Citation: Y. Hasegawa et al., MEASUREMENT OF SURFACE-STATE CONDUCTANCE USING STM POINT CONTACTS, Surface science, 358(1-3), 1996, pp. 32-37
Authors:
MARTEL R
AVOURIS P
LYO IW
Citation: R. Martel et al., MOLECULARLY ADSORBED OXYGEN SPECIES ON SI(111)-(7X7) - STM-INDUCED DISSOCIATIVE ATTACHMENT STUDIES, Science, 272(5260), 1996, pp. 385-388
Authors:
LYDING JW
SHEN TC
ABELN GC
WANG C
SCOTT PA
TUCKER JR
AVOURIS P
WALKUP RE
Citation: Jw. Lyding et al., ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE-BASED NANOLITHOGRAPHY AND SELECTIVE CHEMISTRY ON SILICON SURFACES, Israel Journal of Chemistry, 36(1), 1996, pp. 3-10
Authors:
AVOURIS P
WALKUP RE
ROSSI AR
SHEN TC
ABELN GC
TUCKER JR
LYDING JW
Citation: P. Avouris et al., STM-INDUCED H ATOM DESORPTION FROM SI(100) - ISOTOPE EFFECTS AND SITESELECTIVITY, Chemical physics letters, 257(1-2), 1996, pp. 148-154
Authors:
SHEN TC
WANG C
ABELN GC
TUCKER JR
LYDING JW
AVOURIS P
WALKUP RE
Citation: Tc. Shen et al., ATOMIC-SCALE DESORPTION THROUGH ELECTRONIC AND VIBRATIONAL-EXCITATIONMECHANISMS, Science, 268(5217), 1995, pp. 1590-1592
Authors:
AVOURIS P
LYO IW
HASEGAWA Y
Citation: P. Avouris et al., PROBING ELECTRICAL-TRANSPORT, ELECTRON INTERFERENCE, AND QUANTUM-SIZEEFFECTS AT SURFACES WITH STM STS/, IBM journal of research and development, 39(6), 1995, pp. 603-616
Authors:
PERSSON BNJ
AVOURIS P
Citation: Bnj. Persson et P. Avouris, THE EFFECTS OF THE ELECTRIC-FIELD IN THE STM ON EXCITATION LOCALIZATION - IMPLICATIONS FOR LOCAL BOND BREAKING, Chemical physics letters, 242(4-5), 1995, pp. 483-489
Authors:
AVOURIS P
LYO IW
MOLINASMATA P
Citation: P. Avouris et al., STM STUDIES OF THE INTERACTION OF SURFACE-STATE ELECTRONS ON METALS WITH STEPS AND ADSORBATES, Chemical physics letters, 240(5-6), 1995, pp. 423-428
Authors:
AVOURIS P
Citation: P. Avouris, MANIPULATION OF MATTER AT THE ATOMIC AND MOLECULAR-LEVELS, Accounts of chemical research, 28(3), 1995, pp. 95-102
Authors:
HASEGAWA Y
AVOURIS P
Citation: Y. Hasegawa et P. Avouris, REAL-SPACE OBSERVATION OF STANDING WAVES AT METAL-SURFACES AND THE DETERMINATION OF SURFACE-STATE DISPERSION WITH THE SCANNING TUNNELING MICROSCOPE, JPN J A P 1, 33(6B), 1994, pp. 3675-3678