AAAAAA

   
Results: 1-23 |
Results: 23
FIELD-INDUCED OXIDATION OF SILICON BY SPM - STUDY OF THE MECHANISM ATNEGATIVE SAMPLE VOLTAGE BY STM, ESTM AND AFM
Authors: ABADAL G PEREZMURANO F BARNIOL N AYMERICH X
Citation: G. Abadal et al., FIELD-INDUCED OXIDATION OF SILICON BY SPM - STUDY OF THE MECHANISM ATNEGATIVE SAMPLE VOLTAGE BY STM, ESTM AND AFM, Applied physics A: Materials science & processing, 66, 1998, pp. 791-795
ELECTROCHEMICAL MODIFICATIONS AT THE NANOMETER-SCALE ON SI(100) SURFACES WITH SCANNING-TUNNELING-MICROSCOPY
Authors: ABADAL G PEREZMURANO F BARNIOL N AYMERICH X
Citation: G. Abadal et al., ELECTROCHEMICAL MODIFICATIONS AT THE NANOMETER-SCALE ON SI(100) SURFACES WITH SCANNING-TUNNELING-MICROSCOPY, Thin solid films, 317(1-2), 1998, pp. 493-496
2-STEP STRESS METHOD FOR THE DYNAMIC TESTING OF VERY THIN (8 NM) SIO2-FILMS
Authors: RODRIGUEZ R MIRANDA E NAFRIA J SUNE J AYMERICH X
Citation: R. Rodriguez et al., 2-STEP STRESS METHOD FOR THE DYNAMIC TESTING OF VERY THIN (8 NM) SIO2-FILMS, Microelectronics and reliability, 38(6-8), 1998, pp. 1127-1131
TRAPPED CHARGE-DISTRIBUTIONS IN THIN (10 NM) SIO2-FILMS SUBJECTED TO STATIC AND DYNAMIC STRESSES
Authors: RODRIGUEZ R NAFRIA M SUNE J AYMERICH X
Citation: R. Rodriguez et al., TRAPPED CHARGE-DISTRIBUTIONS IN THIN (10 NM) SIO2-FILMS SUBJECTED TO STATIC AND DYNAMIC STRESSES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 881-888
SOFT BREAKDOWN FLUCTUATION EVENTS IN ULTRATHIN SIO2 LAYERS
Authors: MIRANDA E SUNE J RODRIGUEZ R NAFRIA M AYMERICH X
Citation: E. Miranda et al., SOFT BREAKDOWN FLUCTUATION EVENTS IN ULTRATHIN SIO2 LAYERS, Applied physics letters, 73(4), 1998, pp. 490-492
ANALYSIS OF THE EVOLUTION OF THE TRAPPED CHARGE-DISTRIBUTIONS IN 10NMSIO2-FILMS DURING DC AND BIPOLAR DYNAMIC STRESS
Authors: RODRIGUEZ R NAFRIA M SUNE J AYMERICH X
Citation: R. Rodriguez et al., ANALYSIS OF THE EVOLUTION OF THE TRAPPED CHARGE-DISTRIBUTIONS IN 10NMSIO2-FILMS DURING DC AND BIPOLAR DYNAMIC STRESS, Microelectronics and reliability, 37(10-11), 1997, pp. 1517-1520
NANOMETER-SCALE LITHOGRAPHY OF SILICON(100) SURFACES USING TAPPING MODE ATOMIC-FORCE MICROSCOPY
Authors: SERVAT J GOROSTIZA P SANZ F PEREZMURANO F BARNIOL N ABADAL G AYMERICH X
Citation: J. Servat et al., NANOMETER-SCALE LITHOGRAPHY OF SILICON(100) SURFACES USING TAPPING MODE ATOMIC-FORCE MICROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1208-1212
A NEW METHOD TO PERFORM IN-SITU CURRENT-VOLTAGE CURVES WITH AN ELECTROCHEMICAL SCANNING TUNNELING MICROSCOPE
Authors: ABADAL G PEREZMURANO F BARNIOL N BORRISE X AYMERICH X
Citation: G. Abadal et al., A NEW METHOD TO PERFORM IN-SITU CURRENT-VOLTAGE CURVES WITH AN ELECTROCHEMICAL SCANNING TUNNELING MICROSCOPE, Ultramicroscopy, 66(3-4), 1996, pp. 133-139
BOHM TRAJECTORIES AND THEIR POTENTIAL USE FOR THE MONTE-CARLO SIMULATION OF RESONANT-TUNNELING DIODES
Authors: SUNE J ORIOLS X MARTIN F AYMERICH X
Citation: J. Sune et al., BOHM TRAJECTORIES AND THEIR POTENTIAL USE FOR THE MONTE-CARLO SIMULATION OF RESONANT-TUNNELING DIODES, Applied surface science, 102, 1996, pp. 255-258
BREAKDOWN OF THIN GATE SILICON DIOXIDE FILMS - A REVIEW
Authors: NAFRIA M SUNE J AYMERICH X
Citation: M. Nafria et al., BREAKDOWN OF THIN GATE SILICON DIOXIDE FILMS - A REVIEW, Microelectronics and reliability, 36(7-8), 1996, pp. 871-905
DEGRADATION AND BREAKDOWN OF THIN SILICON DIOXIDE FILMS UNDER DYNAMICELECTRICAL STRESS
Authors: NAFRIA M SUNE J YELAMOS D AYMERICH X
Citation: M. Nafria et al., DEGRADATION AND BREAKDOWN OF THIN SILICON DIOXIDE FILMS UNDER DYNAMICELECTRICAL STRESS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2215-2226
LOCAL MODIFICATION OF N-SI(100) SURFACE IN AQUEOUS-SOLUTIONS UNDER ANODIC AND CATHODIC POTENTIAL POLARIZATION WITH AN IN-SITU SCANNING TUNNELING MICROSCOPE
Authors: YE JH PEREZMURANO F BARNIOL N ABADAL G AYMERICH X
Citation: Jh. Ye et al., LOCAL MODIFICATION OF N-SI(100) SURFACE IN AQUEOUS-SOLUTIONS UNDER ANODIC AND CATHODIC POTENTIAL POLARIZATION WITH AN IN-SITU SCANNING TUNNELING MICROSCOPE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1423-1428
FREQUENCY-DEPENDENCE OF DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS
Authors: NAFRIA M YELAMOS D SUNE J AYMERICH X
Citation: M. Nafria et al., FREQUENCY-DEPENDENCE OF DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS, Quality and reliability engineering international, 11(4), 1995, pp. 257-261
NANOMODIFICATION OF SILICON (100) SURFACE WITH SCANNING-TUNNELING-MICROSCOPY USING POLYSILICON ON SILICON STRUCTURE
Authors: PEREZMURANO F BARNIOL N ABADAL G YE JH AYMERICH X CANE C
Citation: F. Perezmurano et al., NANOMODIFICATION OF SILICON (100) SURFACE WITH SCANNING-TUNNELING-MICROSCOPY USING POLYSILICON ON SILICON STRUCTURE, Materials science and technology, 11(1), 1995, pp. 85-89
RELATION BETWEEN DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS UNDER AC STRESS CONDITIONS
Authors: NAFRIA M YELAMOS D SUNE J AYMERICH X
Citation: M. Nafria et al., RELATION BETWEEN DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS UNDER AC STRESS CONDITIONS, Microelectronic engineering, 28(1-4), 1995, pp. 321-324
FIELD-INDUCED NANOMODIFICATION ON SILICON (100) WITH SCANNING-TUNNELING-MICROSCOPY
Authors: BARNIOL N PEREZMURANO F ABADAL G YE JH AYMERICH X
Citation: N. Barniol et al., FIELD-INDUCED NANOMODIFICATION ON SILICON (100) WITH SCANNING-TUNNELING-MICROSCOPY, Microelectronic engineering, 27(1-4), 1995, pp. 27-30
MORPHOLOGIC AND SPECTROSCOPIC CHARACTERIZATION OF POROUS PT GAAS SCHOTTKY DIODES BY SCANNING-TUNNELING-MICROSCOPY/
Authors: MASO J BARNIOL N PEREZMURANO F AYMERICH X
Citation: J. Maso et al., MORPHOLOGIC AND SPECTROSCOPIC CHARACTERIZATION OF POROUS PT GAAS SCHOTTKY DIODES BY SCANNING-TUNNELING-MICROSCOPY/, Thin solid films, 261(1-2), 1995, pp. 299-306
HIGH-FIELD DYNAMIC STRESS OF THIN SIO2-FILMS
Authors: NAFRIA M SUNE J YELAMOS D AYMERICH X
Citation: M. Nafria et al., HIGH-FIELD DYNAMIC STRESS OF THIN SIO2-FILMS, Microelectronics and reliability, 35(3), 1995, pp. 539-553
NANOSCALE MODIFICATION OF H-TERMINATED N-SI(100) SURFACES IN AQUEOUS-SOLUTIONS WITH AN IN-SITU ELECTROCHEMICAL SCANNING TUNNELING MICROSCOPE
Authors: YE JH PEREZMURANO F BARNIOL N ABADAL G AYMERICH X
Citation: Jh. Ye et al., NANOSCALE MODIFICATION OF H-TERMINATED N-SI(100) SURFACES IN AQUEOUS-SOLUTIONS WITH AN IN-SITU ELECTROCHEMICAL SCANNING TUNNELING MICROSCOPE, Journal of physical chemistry, 99(49), 1995, pp. 17650-17652
STATIONARY MODELING OF 2-DIMENSIONAL STATES IN RESONANT-TUNNELING DEVICES
Authors: ORIOLS X SUNE J MARTIN F AYMERICH X
Citation: X. Oriols et al., STATIONARY MODELING OF 2-DIMENSIONAL STATES IN RESONANT-TUNNELING DEVICES, Journal of applied physics, 78(3), 1995, pp. 2135-2137
NANOMETER-SCALE OXIDATION OF SI(100) SURFACES BY TAPPING MODE ATOMIC-FORCE MICROSCOPY
Authors: PEREZMURANO F ABADAL G BARNIOL N AYMERICH X SERVAT J GOROSTIZA P SANZ F
Citation: F. Perezmurano et al., NANOMETER-SCALE OXIDATION OF SI(100) SURFACES BY TAPPING MODE ATOMIC-FORCE MICROSCOPY, Journal of applied physics, 78(11), 1995, pp. 6797-6801
REVERSIBLE DIELECTRIC-BREAKDOWN OF THIN GATE OXIDES IN MOS DEVICES
Authors: SUNE J NAFRIA M AYMERICH X
Citation: J. Sune et al., REVERSIBLE DIELECTRIC-BREAKDOWN OF THIN GATE OXIDES IN MOS DEVICES, Microelectronics and reliability, 33(7), 1993, pp. 1031-1039
CHARACTERIZATION OF SIO2 DIELECTRIC-BREAKDOWN FOR RELIABILITY SIMULATION
Authors: NAFRIA M SUNE J AYMERICH X
Citation: M. Nafria et al., CHARACTERIZATION OF SIO2 DIELECTRIC-BREAKDOWN FOR RELIABILITY SIMULATION, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1662-1668
Risultati: 1-23 |