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Results:
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Results: 15
Authors:
Sanchez, AM
Pacheco, FJ
Molina, SI
Stemmer, J
Aderhold, J
Graul, J
Citation: Am. Sanchez et al., Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 299-303
Authors:
Sanchez, AM
Pacheco, FJ
Molina, SI
Stemmer, J
Aderhold, J
Graul, J
Citation: Am. Sanchez et al., Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001), J ELEC MAT, 30(5), 2001, pp. L17-L20
Authors:
Weizel, R
Aderhold, J
Baitsch, C
Citation: R. Weizel et al., Network control between management and moderation: Significance and handling of concepts of moderation in the control of business networks, GRUPPEND-Z, 32(1), 2001, pp. 21-36
Authors:
Mistele, D
Fedler, F
Klausing, H
Rotter, T
Stemmer, J
Semchinova, OK
Aderhold, J
Citation: D. Mistele et al., Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres, J CRYST GR, 230(3-4), 2001, pp. 564-568
Authors:
Rotter, T
Ferretti, R
Mistele, D
Fedler, F
Klausing, H
Stemmer, J
Semchinova, OK
Aderhold, J
Graul, J
Citation: T. Rotter et al., Electrical properties of photoanodically generated thin oxide films on n-GaN, J CRYST GR, 230(3-4), 2001, pp. 602-606
Authors:
Aderhold, J
Davydov, VY
Fedler, F
Klausing, H
Mistele, D
Rotter, T
Semchinova, O
Stemmer, J
Graul, J
Citation: J. Aderhold et al., InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates, J CRYST GR, 222(4), 2001, pp. 701-705
Authors:
Rotter, T
Mistele, D
Stemmer, J
Seyboth, M
Schwegler, V
Paprotta, S
Fedler, F
Klausing, H
Semchinova, OK
Aderhold, J
Graul, J
Citation: T. Rotter et al., First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide, ELECTR LETT, 37(11), 2001, pp. 715-716
Authors:
Klausing, H
Aderhold, J
Fedler, F
Mistele, D
Stemmer, J
Semchinova, O
Graul, J
Danhardt, J
Panzer, S
Citation: H. Klausing et al., Electron beam pumping in nitride vertical cavities with GaN/Al0.25Ga0.75N Bragg reflectors, MRS I J N S, 5, 2000, pp. NIL_562-NIL_567
Authors:
Emtsev, VV
Davydov, VY
Kozlovskii, VV
Lundin, VV
Poloskin, DS
Smirnov, AN
Shmidt, NM
Usikov, AS
Aderhold, J
Klausing, H
Mistele, D
Rotter, T
Stemmer, J
Semchinova, O
Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Authors:
Klochikhin, AA
Davydov, VY
Goncharuk, IN
Smirnov, AN
Nikolaev, AE
Baidakova, MV
Aderhold, J
Graul, J
Stemmer, J
Semchinova, O
Citation: Aa. Klochikhin et al., Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys, PHYS REV B, 62(4), 2000, pp. 2522-2535
Authors:
Stemmer, J
Fedler, F
Klausing, H
Mistele, D
Rotter, T
Semchinova, O
Aderhold, J
Sanchez, AM
Pacheco, FJ
Molina, SI
Fehrer, M
Hommel, D
Graul, J
Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20
Authors:
Emtsev, VV
Davydov, VY
Lundin, VV
Poloskin, DS
Aderhold, J
Klausing, H
Mistele, D
Rotter, T
Stemmer, J
Fedler, F
Semchinova, O
Graul, J
Citation: Vv. Emtsev et al., Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films, J CRYST GR, 210(1-3), 2000, pp. 273-277
Authors:
Rotter, T
Mistele, D
Stemmer, J
Fedler, F
Aderhold, J
Graul, J
Schwegler, V
Kirchner, C
Kamp, M
Heuken, M
Citation: T. Rotter et al., Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions, APPL PHYS L, 76(26), 2000, pp. 3923-3925
Authors:
Davydov, VY
Goncharuk, IN
Baidakova, MV
Smirnov, AN
Subashiev, AV
Aderhold, J
Stemmer, J
Rotter, T
Uffmann, D
Semchinova, O
Citation: Vy. Davydov et al., Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions, MAT SCI E B, 59(1-3), 1999, pp. 222-225
Authors:
Rotter, T
Aderhold, J
Mistele, D
Semchinova, O
Stemmer, J
Uffmann, D
Graul, J
Citation: T. Rotter et al., Smooth GaN surfaces by photoinduced electro-chemical etching, MAT SCI E B, 59(1-3), 1999, pp. 350-354
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