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Results: 26-50/90
Authors:
Nitta, S
Kashima, T
Kariya, M
Yukawa, Y
Yamaguchi, S
Amano, H
Akasaki, I
Citation: S. Nitta et al., Mass transport, faceting and behavior of dislocations in GaN, MRS I J N S, 5, 2000, pp. NIL_82-NIL_87
Authors:
Benamara, M
Liliental-Weber, Z
Mazur, JH
Swider, W
Washburn, J
Iwaya, M
Akasaki, I
Amano, H
Citation: M. Benamara et al., The role of the multi buffer layer technique on the structural quality of GaN, MRS I J N S, 5, 2000, pp. NIL_341-NIL_346
Authors:
Akasaki, I
Kamiyama, S
Detchprohm, T
Takeuchi, T
Amano, H
Citation: I. Akasaki et al., Growth of crack-free thick AlGaN layer and its application to GaN-based laser diode, MRS I J N S, 5, 2000, pp. NIL_388-NIL_393
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Spectroscopy in polarized and piezoelectric AlGaInN heterostructures, MRS I J N S, 5, 2000, pp. NIL_822-NIL_833
Authors:
Akasaki, I
Citation: I. Akasaki, The evolution of group III nitride semiconductors - Seeking blue light emission, MAT SCI E B, 74(1-3), 2000, pp. 101-106
Authors:
Sato, T
Iwaya, M
Isomura, K
Ukai, T
Kamiyama, S
Amano, H
Akasaki, I
Citation: T. Sato et al., Theoretical analysis of optical transverse-mode control on GaN-based laserdiodes, IEICE TR EL, E83C(4), 2000, pp. 573-578
Authors:
Wetzel, C
Detchprohm, T
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices, J ELEC MAT, 29(3), 2000, pp. 252-255
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, YW
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, YS
Yamada, N
Citation: T. Takeuchi et al., Nitride-based laser diodes using thick n-AlGaN layers, J ELEC MAT, 29(3), 2000, pp. 302-305
Authors:
Nitta, S
Kashima, T
Nakamura, R
Iwaya, M
Amano, H
Akasaki, I
Citation: S. Nitta et al., Mass transport of GaN and reduction of threading dislocations, SURF REV L, 7(5-6), 2000, pp. 561-564
Authors:
Iwaya, M
Terao, S
Hayashi, N
Kashima, T
Amano, H
Akasaki, I
Citation: M. Iwaya et al., Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer, APPL SURF S, 159, 2000, pp. 405-413
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Strain relief by In-doping and its effect on the surface and on the interface structures in (Al) GaN on sapphire grown by metalorganic vapor-phase epitaxy, APPL SURF S, 159, 2000, pp. 414-420
Authors:
Nitta, S
Kariya, M
Kashima, T
Yamaguchi, S
Amano, H
Akasaki, I
Citation: S. Nitta et al., Mass transport and the reduction of threading dislocation in GaN, APPL SURF S, 159, 2000, pp. 421-426
Authors:
Tabuchi, M
Hirayama, K
Takeda, Y
Takeuchi, T
Amano, H
Akasaki, I
Citation: M. Tabuchi et al., Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method, APPL SURF S, 159, 2000, pp. 432-440
Authors:
Shapiro, NA
Kim, Y
Feick, H
Weber, ER
Perlin, P
Yang, JW
Akasaki, I
Amano, H
Citation: Na. Shapiro et al., Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain, PHYS REV B, 62(24), 2000, pp. R16318-R16321
Authors:
Wagner, M
Buyanova, IA
Thinh, NQ
Chen, WM
Monemar, B
Lindstrom, JL
Amano, H
Akasaki, I
Citation: M. Wagner et al., Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN, PHYS REV B, 62(24), 2000, pp. 16572-16577
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells, PHYS REV B, 62(20), 2000, pp. R13302-R13305
Authors:
Hai, PN
Chen, WM
Buyanova, IA
Monemar, B
Amano, H
Akasaki, I
Citation: Pn. Hai et al., Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study, PHYS REV B, 62(16), 2000, pp. R10607-R10609
Authors:
Pozina, G
Bergman, JP
Bonemar, B
Takeuchi, T
Amano, H
Akasaki, I
Citation: G. Pozina et al., Multiple peak spectra from InGaN/GaN multiple quantum wells, PHYS ST S-A, 180(1), 2000, pp. 85-89
Authors:
Akasaki, I
Citation: I. Akasaki, Progress in crystal growth of nitride semiconductors, J CRYST GR, 221, 2000, pp. 231-239
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Kashima, T
Kosaki, M
Yukawa, Y
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N-2 carrier gas, J CRYST GR, 221, 2000, pp. 327-333
Authors:
Kariya, M
Nitta, S
Yamaguchi, S
Kashima, T
Kato, H
Amano, H
Akasaki, I
Citation: M. Kariya et al., Structural characterization of Al1-xInxN lattice-matched to GaN, J CRYST GR, 209(2-3), 2000, pp. 419-423
Authors:
Pozina, G
Bergman, JP
Monemar, B
Takeuchi, T
Amano, H
Akasaki, I
Citation: G. Pozina et al., Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells, J APPL PHYS, 88(5), 2000, pp. 2677-2681
Authors:
Marinelli, C
Khrushchev, IY
Rorison, JM
Penty, RV
White, IH
Kaneko, Y
Watanabe, S
Yamada, N
Takeuchi, T
Amano, H
Akasaki, I
Hasnain, G
Schneider, R
Wang, SY
Tan, MRT
Citation: C. Marinelli et al., Gain-switching of GaInN multiquantum well laser diodes, ELECTR LETT, 36(1), 2000, pp. 83-84
Authors:
Pozina, G
Bergman, JP
Monemar, B
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport, APPL PHYS L, 77(11), 2000, pp. 1638-1640
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy, APPL PHYS L, 76(7), 2000, pp. 876-878