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Results: 26-39/39
Authors:
Dharmawardana, KGP
Amaratunga, GAJ
Citation: Kgp. Dharmawardana et Gaj. Amaratunga, Modeling of high current density trench gate MOSFET, IEEE DEVICE, 47(12), 2000, pp. 2420-2428
Authors:
Rupesinghe, NL
Chhowalla, M
Amaratunga, GAJ
Weightman, P
Martin, D
Unsworth, P
Murray, J
Citation: Nl. Rupesinghe et al., Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si, APPL PHYS L, 77(12), 2000, pp. 1908-1910
Authors:
Chhowalla, M
Ferrari, AC
Robertson, J
Amaratunga, GAJ
Citation: M. Chhowalla et al., Evolution of sp(2) bonding with deposition temperature in tetrahedral amorphous carbon studied by Raman spectroscopy, APPL PHYS L, 76(11), 2000, pp. 1419-1421
Authors:
Amaratunga, GAJ
Baxendale, M
Rupesinghe, N
Alexandrou, I
Chhowalla, M
Butler, T
Munindradasa, A
Kiley, CJ
Zhang, L
Sakai, T
Citation: Gaj. Amaratunga et al., Field emission from a new form of thin film amorphous carbon having nanoparticle inclusions and carbon nanotubes, NEW DIAM FR, 9(1), 1999, pp. 31-51
Authors:
Garner, DM
Amaratunga, GAJ
Citation: Dm. Garner et Gaj. Amaratunga, Single-mask silicon microtriode, J VAC SCI B, 17(2), 1999, pp. 315-319
Authors:
Silva, SRP
Amaratunga, GAJ
Okano, K
Citation: Srp. Silva et al., Modeling of the electron field emission process in polycrystalline diamondand diamond-like carbon thin films, J VAC SCI B, 17(2), 1999, pp. 557-561
Authors:
Udrea, F
Chan, SSM
Thomson, S
Trajkovic, T
Waind, PR
Amaratunga, GAJ
Crees, DE
Citation: F. Udrea et al., 1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance, IEEE ELEC D, 20(8), 1999, pp. 428-430
Authors:
Baxendale, M
Amaratunga, GAJ
Citation: M. Baxendale et Gaj. Amaratunga, Metallic conductivity in bundles of intercalated multiwall carbon nanotubes, SYNTH METAL, 103(1-3), 1999, pp. 2496-2497
Authors:
Musa, I
Baxendale, M
Amaratunga, GAJ
Eccleston, W
Citation: I. Musa et al., Properties of regioregular poly(3-octylthiophene)/multi-wall carbon nanotube composites, SYNTH METAL, 102(1-3), 1999, pp. 1250-1250
Authors:
Alexandrou, I
Zergioti, I
Amaratunga, GAJ
Healy, MJF
Kiely, CJ
Hatto, P
Velegrakis, M
Fotakis, C
Citation: I. Alexandrou et al., A new reactive pulsed laser ablation technique for the deposition of hard carbon and carbon-nitride thin films, MATER LETT, 39(2), 1999, pp. 97-102
Authors:
Alexandrou, I
Scheibe, HJ
Kiely, CJ
Papworth, AJ
Amaratunga, GAJ
Schultrich, B
Citation: I. Alexandrou et al., Carbon films with an sp(2) network structure, PHYS REV B, 60(15), 1999, pp. 10903-10907
Authors:
Garner, DM
Amaratunga, GAJ
Citation: Dm. Garner et Gaj. Amaratunga, A silicon heterojunction bipolar transistor with an amorphous silicon emitter and a crystalline silicon emitter region, SOL ST ELEC, 43(11), 1999, pp. 1973-1983
Authors:
Trajkovic, T
Udrea, F
Amaratunga, GAJ
Milne, WI
Chan, SSM
Waind, PR
Thomson, J
Crees, DE
Citation: T. Trajkovic et al., Silicon MOS controlled bipolar power switching devices using trench technology, INT J ELECT, 86(10), 1999, pp. 1153-1168
Authors:
Alexandrou, I
Zergioti, I
Healy, MJF
Amaratunga, GAJ
Kiely, CJ
Davock, H
Papworth, A
Fotakis, C
Citation: I. Alexandrou et al., Enhancement of the properties of pulsed laser-deposited carbon nitride by the synchronisation of laser and N-2 gas jet pulses, SURF COAT, 110(3), 1998, pp. 147-152