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Results: 1-15 |
Results: 15
Novel materials for thermal via incorporation into SOI structures
Authors: Baine, P Choon, KY Gamble, HS Armstrong, BM Mitchell, SJN
Citation: P. Baine et al., Novel materials for thermal via incorporation into SOI structures, J MAT S-M E, 12(4-6), 2001, pp. 215-218
LPCVD of tungsten by selective deposition on silicon
Authors: Li, FX Armstrong, BM Gamble, HS
Citation: Fx. Li et al., LPCVD of tungsten by selective deposition on silicon, J MAT S-M E, 12(4-6), 2001, pp. 303-306
Characterization of CVD tungsten deposited by silane reduction
Authors: Bain, MF Armstrong, BM Gamble, HS
Citation: Mf. Bain et al., Characterization of CVD tungsten deposited by silane reduction, J MAT S-M E, 12(4-6), 2001, pp. 327-331
SiGeHBTs on bonded wafer substrates
Authors: Hall, S Lamb, AC Bain, M Armstrong, BM Gamble, H El Mubarek, HAW Ashburn, P
Citation: S. Hall et al., SiGeHBTs on bonded wafer substrates, MICROEL ENG, 59(1-4), 2001, pp. 449-454
Silicon-on-insulator substrates with buried tungsten silicide layer
Authors: Gamble, HS Armstrong, BM Baine, P Bain, M McNeill, DW
Citation: Hs. Gamble et al., Silicon-on-insulator substrates with buried tungsten silicide layer, SOL ST ELEC, 45(4), 2001, pp. 551-557
Integrated self-steered silicon detector array
Authors: Wu, Y Fusco, VF Chen, Q Stewart, JAC Gamble, HS Armstrong, BM
Citation: Y. Wu et al., Integrated self-steered silicon detector array, IEE P-MIC A, 147(2), 2000, pp. 106-110
Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI)
Authors: Hamel, JS Stefanou, S Bain, M Armstrong, BM Gamble, HS
Citation: Js. Hamel et al., Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI), IEEE MICR G, 10(4), 2000, pp. 134-135
Surface electromigration in copper interconnects
Authors: McCusker, ND Gamble, HS Armstrong, BM
Citation: Nd. Mccusker et al., Surface electromigration in copper interconnects, MICROEL REL, 40(1), 2000, pp. 69-76
Deposition of tungsten by plasma enhanced chemical vapour deposition
Authors: Bain, MF Armstrong, BM Gamble, HS
Citation: Mf. Bain et al., Deposition of tungsten by plasma enhanced chemical vapour deposition, J PHYS IV, 9(P8), 1999, pp. 827-833
Low-loss CPW lines on surface stabilized high-resistivity silicon
Authors: Gamble, HS Armstrong, BM Mitchell, SJN Wu, Y Fusco, VF Stewart, JAC
Citation: Hs. Gamble et al., Low-loss CPW lines on surface stabilized high-resistivity silicon, IEEE MICR G, 9(10), 1999, pp. 395-397
SiO2 interface layer effects on microwave loss of high-resistivity CPW line
Authors: Wu, YH Gamble, HS Armstrong, BM Fusco, VF Stewart, JAC
Citation: Yh. Wu et al., SiO2 interface layer effects on microwave loss of high-resistivity CPW line, IEEE MICR G, 9(1), 1999, pp. 10-12
The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers
Authors: Goh, WL Raza, SH Montgomery, JH Armstrong, BM Gamble, HS
Citation: Wl. Goh et al., The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers, IEEE ELEC D, 20(5), 1999, pp. 212-214
A potential chemical source of C-2
Authors: Pan, WT Armstrong, BM Shevlin, PB Crittell, CH Stang, PJ
Citation: Wt. Pan et al., A potential chemical source of C-2, CHEM LETT, (8), 1999, pp. 849-849
Polycrystalline silicon film growth in a SiF4/SiH4/H-2 plasma
Authors: Lee, B Quinn, LJ Baine, PT Mitchell, SJN Armstrong, BM Gamble, HS
Citation: B. Lee et al., Polycrystalline silicon film growth in a SiF4/SiH4/H-2 plasma, THIN SOL FI, 337(1-2), 1999, pp. 55-58
An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures
Authors: Len, VSC Hurley, RE McCusker, N McNeill, DW Armstrong, BM Gamble, HS
Citation: Vsc. Len et al., An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures, SOL ST ELEC, 43(6), 1999, pp. 1045-1049
Risultati: 1-15 |