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Krauss, AR
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Citation: O. Auciello et al., Review of synthesis of low-work function Cu-Li alloy coatings and characterization of the field emission properties for application to field emissiondevices, J VAC SCI B, 19(3), 2001, pp. 877-883
Authors:
Baumann, PK
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Bai, GR
Ghosh, K
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Kim, DJ
Maria, JP
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Citation: Pk. Baumann et al., Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD, INTEGR FERR, 35(1-4), 2001, pp. 1881-1888
Authors:
York, RA
Nagra, AS
Periaswamy, P
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Citation: Ra. York et al., Synthesis and characterization of (BxSr1-x)Ti1+yO3+z thin films and integration into microwave varactors and phase shifters, INTEGR FERR, 34(1-4), 2001, pp. 1617-1628
Authors:
Im, J
Auciello, O
Baumann, PK
Streiffer, SK
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Krauss, AR
Citation: J. Im et al., Magnetron sputter-deposited multilayer (BaxSr1x)Ti1+yO3+Z thin films for passive and active devices, INTEGR FERR, 34(1-4), 2001, pp. 1703-1710
Authors:
Krauss, AR
Auciello, O
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Im, J
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Gao, Y
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Citation: Ar. Krauss et al., Studies of ferroelectric film growth and capacitor interface processes viain situ analytical techniques and correlation with electrical properties, INTEGR FERR, 32(1-4), 2001, pp. 813-823
Citation: R. Ramesh et al., Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories, MAT SCI E R, 32(6), 2001, pp. 191-236
Authors:
Krauss, AR
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Sumant, A
Tucek, J
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Citation: Ar. Krauss et al., Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices, DIAM RELAT, 10(11), 2001, pp. 1952-1961
Authors:
Jiao, S
Sumant, A
Kirk, MA
Gruen, DM
Krauss, AR
Auciello, O
Citation: S. Jiao et al., Microstructure of ultrananocrystalline diamond films grown by microwave Ar-CH4 plasma chemical vapor deposition with or without added H-2, J APPL PHYS, 90(1), 2001, pp. 118-122
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Krauss, AR
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Gruen, DM
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Givargizov, EI
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Shefer, E
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Citation: Ar. Krauss et al., Electron field emission for ultrananocrystalline diamond films, J APPL PHYS, 89(5), 2001, pp. 2958-2967
Authors:
Dhote, AM
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Citation: Am. Dhote et al., Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques, APPL PHYS L, 79(6), 2001, pp. 800-802
Authors:
Bhattacharyya, S
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Curtiss, LA
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Zapol, P
Citation: S. Bhattacharyya et al., Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films, APPL PHYS L, 79(10), 2001, pp. 1441-1443
Authors:
Thompson, C
Munkholm, A
Streiffer, SK
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Ghosh, K
Eastman, JA
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Bai, GR
Lee, MK
Eom, CB
Citation: C. Thompson et al., X-ray scattering evidence for the structural nature of fatigue in epitaxial Pb(Zr, Ti)O-3 films, APPL PHYS L, 78(22), 2001, pp. 3511-3513
Authors:
Aggarwal, S
Nagaraj, B
Jenkins, IG
Li, H
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Ramesh, R
Dhote, AM
Krauss, AR
Auciello, O
Citation: S. Aggarwal et al., Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories, ACT MATER, 48(13), 2000, pp. 3387-3394
Authors:
Tucek, JC
Krauss, AR
Gruen, DM
Auciello, O
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Mancini, DC
Zurn, S
Polla, D
Citation: Jc. Tucek et al., Development of edge field emission cold cathodes based on low work function Cu-Li alloy coatings, J VAC SCI B, 18(5), 2000, pp. 2427-2432
Authors:
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Krauss, AR
Im, J
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Gao, Y
Mueller, AH
Ramesh, R
Citation: O. Auciello et al., Studies of ferroelectric heterostructure thin films and interfaces, via insitu analytical techniques, INTEGR FERR, 29(1-2), 2000, pp. 1-12
Authors:
Auciello, O
Van Keuls, F
Bhalla, A
Desu, SB
Horwitz, J
Payne, DA
Ramesh, R
Citation: O. Auciello et al., Round table discussion, FWPR'99: Future trends in ferroelectric research and technology, INTEGR FERR, 29(1-2), 2000, pp. A161-A163
Authors:
Munkholm, A
Thompson, C
Stephenson, GB
Eastman, JA
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Speck, JS
DenBaars, SP
Citation: A. Munkholm et al., Transition between the 1 x 1 and (root 3 x 2 root 3)R30 degrees surface structures of GaN in the vapor-phase environment, PHYSICA B, 283(1-3), 2000, pp. 217-222
Authors:
Poonawala, N
Dravid, VP
Auciello, O
Im, J
Krauss, AR
Citation: N. Poonawala et al., Transmission electron microscopy study of hydrogen-induced degradation in strontium bismuth tantalate thin films, J APPL PHYS, 87(5), 2000, pp. 2227-2231
Authors:
Angadi, M
Auciello, O
Krauss, AR
Gundel, HW
Citation: M. Angadi et al., The role of electrode material and polarization fatigue on electron emission from ferroelectric Pb(ZrxTi1-x)O-3 cathodes, APPL PHYS L, 77(17), 2000, pp. 2659-2661