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Results:
1-8
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Results: 8
Authors:
BALASINSKI A
WORLEY J
HUANG KW
WALTERS J
LIOU FT
Citation: A. Balasinski et al., OBSERVATION OF 2 TYPES OF TRAPPING CENTERS IN THIN-FILM TRANSISTORS USING CHARGE-PUMPING TECHNIQUE, IEEE electron device letters, 16(10), 1995, pp. 460-462
Authors:
BALASINSKI A
WORLEY J
HUANG KW
LIOU FT
Citation: A. Balasinski et al., IDENTIFICATION OF SI SIO2 INTERFACE PROPERTIES IN THIN-FILM TRANSISTORS WITH CHARGE-PUMPING TECHNIQUE/, Journal of the Electrochemical Society, 142(8), 1995, pp. 2717-2721
Authors:
ZHANG BL
BALASINSKI A
MA TP
Citation: Bl. Zhang et al., HOT-CARRIER EFFECTS ON GATE-INDUCED-DRAIN-LEAKAGE (GIDL) CURRENT IN THIN-FILM SOI NMOSFETS, IEEE electron device letters, 15(5), 1994, pp. 169-171
Authors:
BALASINSKI A
TSAI MH
VISHNUBHOTLA L
MA TP
TSENG HH
TOBIN PJ
Citation: A. Balasinski et al., INTERFACE PROPERTIES IN FLUORINATED (100) AND (111)SI SIO2 MOSFETS/, Microelectronic engineering, 22(1-4), 1993, pp. 97-100
Authors:
BALASINSKI A
MA TP
Citation: A. Balasinski et Tp. Ma, IMPACT OF RADIATION-INDUCED NONUNIFORM DAMAGE NEAR MOSFET JUNCTIONS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1286-1292
Authors:
BALASINSKI A
MA TP
Citation: A. Balasinski et Tp. Ma, REDUCTION OF INTERFACE-TRAP DENSITY IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY IRRADIATION, Applied physics letters, 62(24), 1993, pp. 3170-3171
Authors:
ACOVIC A
HSU CCH
HSIA LC
BALASINSKI A
MA TP
Citation: A. Acovic et al., EFFECTS OF X-RAY-IRRADIATION ON GIDL IN MOSFETS, IEEE electron device letters, 13(4), 1992, pp. 189-191
HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING
Authors:
CHEN WL
BALASINSKI A
ZHANG BL
MA TP
Citation: Wl. Chen et al., HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING, IEEE electron device letters, 13(4), 1992, pp. 201-202
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