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Results:
1-18
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Results: 18
Authors:
SVOB L
CHEZE I
LUSSON A
BALLUTAUD D
ROMMELUERE JF
MARFAING Y
Citation: L. Svob et al., CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF AS INCORPORATION IN MOVPE-GROWN CDTE AND CORRESPONDING ACCEPTOR ELECTRICAL STATE ACTIVATION, Journal of crystal growth, 185, 1998, pp. 459-464
Authors:
LEFEVRE F
LORANS D
DEBIEMMECHOUVY C
ETCHEBERRY A
BALLUTAUD D
TRIBOULET R
Citation: F. Lefevre et al., OXIDATION OF HG0.8CD0.2TE IN BASIC-MEDIA - AN XPS AND SPECTROSCOPIC ELLIPSOMETRY STUDY, Journal of crystal growth, 185, 1998, pp. 1237-1241
Authors:
ETEMADI R
GODET C
PERRIN J
SEIGNAC A
BALLUTAUD D
Citation: R. Etemadi et al., OPTICAL AND COMPOSITIONAL STUDY OF SILICON-OXIDE THIN-FILMS DEPOSITEDIN A DUAL-MODE (MICROWAVE RADIOFREQUENCY) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR/, Journal of applied physics, 83(10), 1998, pp. 5224-5232
Authors:
ZHU M
HAN Y
WEHRSPOHN RB
GODET C
ETEMADI R
BALLUTAUD D
Citation: M. Zhu et al., THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE FROM SILICON-OXIDE THIN-FILMSPREPARED BY DUAL-PLASMA CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(10), 1998, pp. 5386-5393
Authors:
LUSSON L
LUSSON A
ELKAIM P
DIXMIER J
BALLUTAUD D
Citation: L. Lusson et al., HYDROGEN CONFIGURATIONS AND STABILITY IN AMORPHOUS SPUTTERED SILICON, Journal of applied physics, 81(7), 1997, pp. 3073-3080
Authors:
BARCHUK IP
KILCHITSKAYA VI
LYSENKO VS
NAZAROV AN
RUDENKO TE
DJURENKO SV
RUDENKO AN
YURCHENKO AP
BALLUTAUD D
COLINGE JP
Citation: Ip. Barchuk et al., ELECTRICAL-PROPERTIES AND RADIATION HARDNESS OF SOI SYSTEMS WITH MULTILAYER BURIED DIELECTRIC, IEEE transactions on nuclear science, 44(6), 1997, pp. 2542-2552
Authors:
ANGERMEIER D
KUHN WS
DRUIHLE R
BALLUTAUD D
TRIBOULET R
Citation: D. Angermeier et al., INITIAL GROWTH-PROCESSES IN THE EPITAXY OF GE AND GEH4 ON OXIDIZED SISUBSTRATES, Journal of the Electrochemical Society, 144(2), 1997, pp. 694-697
Authors:
BALLUTAUD D
SEVERAC C
Citation: D. Ballutaud et C. Severac, PROFILES OF CONCENTRATIONS AND CHEMICAL-S TATE OF ELEMENTS IN A MULTILAYERED SI3N4 SIO2/SI FILM/, Le Vide, 52(279), 1996, pp. 114-115
Authors:
LUSSON L
ELKAIM P
CORREIA A
BALLUTAUD D
Citation: L. Lusson et al., HYDROGEN DIFFUSION AND TRAPPING IN MICRO-NANOCRYSTALLINE SILICON, Journal de physique. III, 5(8), 1995, pp. 1173-1184
Authors:
BALLUTAUD D
DEBIEMMECHOUVY C
ETCHEBERRY A
DEMIERRY P
SVOB L
Citation: D. Ballutaud et al., REACTIVITY OF III-V AND II-VI SEMICONDUCTORS TOWARD HYDROGEN - SURFACE MODIFICATION AND EVOLUTION IN AIR, Applied surface science, 84(2), 1995, pp. 187-192
Authors:
CORREIA A
BALLUTAUD D
BOUTRYFORVEILLE A
MAURICE JL
Citation: A. Correia et al., EFFECTS OF COPPER AND OXYGEN PRECIPITATION DURING THERMAL-OXIDATION OF SILICON - AN ELECTRON-BEAM-INDUCED CURRENT STUDY, Journal of applied physics, 78(11), 1995, pp. 6543-6553
Authors:
CORREIA A
BALLUTAUD D
MAURICE JL
Citation: A. Correia et al., MICROSTRUCTURE, ELECTRICAL-PROPERTIES AND PASSIVATION OF DEFECTS AT THE SILICON-SILICON-DIOXIDE INTERFACE, Journal of the Electrochemical Society, 142(3), 1995, pp. 898-902
Authors:
CORREIA A
BALLUTAUD D
BOUTRYFORVEILLE A
Citation: A. Correia et al., PASSIVATION OF OXIDATION-INDUCED DEFECTS IN SILICON, Applied physics letters, 66(18), 1995, pp. 2394-2396
Authors:
CORREIA A
BALLUTAUD D
MAURICE JL
Citation: A. Correia et al., COPPER PRECIPITATION AT THE SILICON SILICON-DIOXIDE INTERFACE - ROLE OF OXYGEN, JPN J A P 1, 33(3A), 1994, pp. 1217-1222
Authors:
DUMONT H
SVOB L
BALLUTAUD D
GOROCHOV O
Citation: H. Dumont et al., CARBON AND HYDROGEN INCORPORATION IN ZNTE LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 23(2), 1994, pp. 239-242
Authors:
LUSSON L
ELKAIM P
CORREIA A
BALLUTAUD D
Citation: L. Lusson et al., HYDROGEN EFFUSION FROM AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS - HYDROGEN STABILITY AND BONDING CONFIGURATIONS, Annales de chimie, 19(7-8), 1994, pp. 421-428
Authors:
CORREIA A
BALLUTAUD D
MAURICE JL
CORNIER CP
Citation: A. Correia et al., ELECTRON-MICROSCOPY STUDY OF OXIDATION-INDUCED DEFECTS AT THE SILICONSILICON-DIOXIDE INTERFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 18(3), 1993, pp. 269-274
Authors:
DEBIEMMECHOUVY C
BALLUTAUD D
PESANT JC
ETCHEBERRY A
Citation: C. Debiemmechouvy et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS SURFACE-EXPOSED TO A RF HYDROGEN PLASMA, Applied physics letters, 62(18), 1993, pp. 2254-2255
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1-18
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