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Results:
1-20
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Results: 20
Authors:
VANDERWAGT JPA
SEABAUGH AC
BEAM EA
Citation: Jpa. Vanderwagt et al., RTD HFET LOW STANDBY POWER SRAM GAIN CELL, IEEE electron device letters, 19(1), 1998, pp. 7-9
Authors:
BROEKAERT TPE
BRAR B
VANDERWAGT JPA
SEABAUGH AC
MORRIS FJ
MOISE TS
BEAM EA
FRAZIER GA
Citation: Tpe. Broekaert et al., A MONOLITHIC 4-BIT 2-GSPS RESONANT-TUNNELING ANALOG-TO-DIGITAL CONVERTER, IEEE journal of solid-state circuits, 33(9), 1998, pp. 1342-1349
Authors:
CHAU HF
TSERNG HQ
BEAM EA
Citation: Hf. Chau et al., KA-BAND POWER PERFORMANCE OF INP INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE microwave and guided wave letters, 6(3), 1996, pp. 129-131
Authors:
CHAU HF
LIU W
BEAM EA
Citation: Hf. Chau et al., INP-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS - RECENT ADVANCES AND THERMAL-PROPERTIES, Microwave and optical technology letters, 11(3), 1996, pp. 114-120
Authors:
BEAM EA
CHAU HF
Citation: Ea. Beam et Hf. Chau, THE USE OF CBR4 AND SIBR4 DOPING IN MOMBE AND APPLICATION TO INP-BASED HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES, Journal of crystal growth, 164(1-4), 1996, pp. 389-395
Authors:
BROEKAERT TPE
RANDALL JN
BEAM EA
JOVANOVIC D
SEABAUGH AC
SMITH BD
Citation: Tpe. Broekaert et al., FUNCTIONAL INP INGAAS LATERAL DOUBLE-BARRIER HETEROSTRUCTURE RESONANT-TUNNELING DIODES BY USING ETCH AND REGROWTH/, Applied physics letters, 69(13), 1996, pp. 1918-1920
Authors:
SKALA SL
WU W
TUCKER JR
LYDING JW
SEABAUGH A
BEAM EA
JOVANOVIC D
Citation: Sl. Skala et al., INTERFACE CHARACTERIZATION IN AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 660-663
Authors:
WU W
SKALA SL
TUCKER JR
LYDING JW
SEABAUGH A
BEAM EA
JOVANOVIC D
Citation: W. Wu et al., INTERFACE CHARACTERIZATION OF AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 602-606
Authors:
TAYLOR MD
WETSEL GC
MCBRIDE SE
BROWN RC
FRENSLEY WR
SEABAUGH AC
KAO YC
BEAM EA
Citation: Md. Taylor et al., NANOPROBE-INDUCED ELECTROSTATIC LATERAL QUANTIZATION IN NEAR-SURFACE RESONANT-TUNNELING HETEROSTRUCTURES, Applied physics letters, 66(26), 1995, pp. 3621-3623
Authors:
BEAM EA
CHAU HF
HENDERSON TS
LIU W
SEABAUGH AC
Citation: Ea. Beam et al., THE USE OF ORGANOMETALLIC GROUP-V SOURCES FOR THE METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF IN0.48GA0.52P GAAS AND IN0.53GA0.47AS/INP HETEROJUNCTION BIPOLAR DEVICE STRUCTURES/, Journal of crystal growth, 136(1-4), 1994, pp. 1-10
Authors:
MIKKELSON CH
SEABAUGH AC
BEAM EA
LUSCOMBE JH
FRAZIER GA
Citation: Ch. Mikkelson et al., COUPLED-QUANTUM-WELL FIELD-EFFECT RESONANT-TUNNELING TRANSISTOR FOR MULTIVALUED LOGIC MEMORY APPLICATIONS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 132-137
Authors:
MOISE TS
SEABAUGH AC
BEAM EA
RANDALL JN
Citation: Ts. Moise et al., ROOM-TEMPERATURE OPERATION OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR BASED INTEGRATED-CIRCUIT, IEEE electron device letters, 14(9), 1993, pp. 441-443
Authors:
CHAU HF
BEAM EA
Citation: Hf. Chau et Ea. Beam, HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 14(8), 1993, pp. 388-390
Authors:
SEABAUGH AC
BEAM EA
TADDIKEN AH
RANDALL JN
KAO YC
Citation: Ac. Seabaugh et al., COINTEGRATION OF RESONANT-TUNNELING AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON INP, IEEE electron device letters, 14(10), 1993, pp. 472-474
Authors:
LIU W
FAN SK
KIM TS
BEAM EA
DAVITO DB
Citation: W. Liu et al., CURRENT TRANSPORT MECHANISM IN GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1378-1383
Authors:
LIU W
SEABAUGH AC
HENDERSON TS
YUKSEL A
BEAM EA
FAN SK
Citation: W. Liu et al., OBSERVATION OF RESONANT-TUNNELING AT ROOM-TEMPERATURE IN GAINP GAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR/, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1384-1389
Authors:
CHAU HF
BEAM EA
Citation: Hf. Chau et Ea. Beam, HIGH-SPEED, HIGH BREAKDOWN VOLTAGE INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOMBE/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2121-2121
Authors:
MOISE TS
SEABAUGH AC
BEAM EA
KAO YC
RANDALL JN
Citation: Ts. Moise et al., ROOM-TEMPERATURE OPERATION OF INGAAS-BASED HOT-ELECTRON TRANSISTORS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2134-2134
Authors:
SEABAUGH AC
TADDIKEN AH
BEAM EA
RANDALL JN
KAO YC
NEWELL B
Citation: Ac. Seabaugh et al., ROOM-TEMPERATURE RESONANT-TUNNELING BIPOLAR-TRANSISTOR XNOR AND XOR INTEGRATED-CIRCUITS, Electronics Letters, 29(20), 1993, pp. 1802-1803
Authors:
CELII FG
BEAM EA
FILESSESLER LA
LIU HY
KAO YC
Citation: Fg. Celii et al., INSITU DETECTION OF RELAXATION IN INGAAS GAAS STRAINED-LAYER SUPERLATTICES USING LASER-LIGHT SCATTERING/, Applied physics letters, 62(21), 1993, pp. 2705-2707
Risultati:
1-20
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