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Results: 1-23 |
Results: 23
HIGHLY SELECTIVE AND WIDELY TUNABLE 1.55-MU-M INP AIR-GAP MICROMACHINED FABRY-PEROT FILTER FOR OPTICAL COMMUNICATIONS/
Authors: SPISSER A LEDANTEC R SEASSAL C LECLERCQ JL BENYATTOU T RONDI D BLONDEAU R GUILLOT G VIKTOROVITCH P
Citation: A. Spisser et al., HIGHLY SELECTIVE AND WIDELY TUNABLE 1.55-MU-M INP AIR-GAP MICROMACHINED FABRY-PEROT FILTER FOR OPTICAL COMMUNICATIONS/, IEEE photonics technology letters, 10(9), 1998, pp. 1259-1261
ELECTROABSORPTION MODULATOR USING A TYPE-II QUANTUM-WELL IN THE INXGA1-XAS INALAS/INP SYSTEM/
Authors: LUGAND C BENYATTOU T GUILLOT G VENET T GENDRY M HOLLINGER G
Citation: C. Lugand et al., ELECTROABSORPTION MODULATOR USING A TYPE-II QUANTUM-WELL IN THE INXGA1-XAS INALAS/INP SYSTEM/, Superlattices and microstructures, 23(2), 1998, pp. 253-259
HIGHLY SELECTIVE 1.55-MU-M INP AIR GAP MICROMACHINED FABRY-PEROT FILTER FOR OPTICAL COMMUNICATIONS/
Authors: SPISSER A LEDANTEC R SEASSAL C LECLERCQ JL BENYATTOU T RONDI D BLONDEAU R GUILLOT G VIKTOROVITCH P
Citation: A. Spisser et al., HIGHLY SELECTIVE 1.55-MU-M INP AIR GAP MICROMACHINED FABRY-PEROT FILTER FOR OPTICAL COMMUNICATIONS/, Electronics Letters, 34(5), 1998, pp. 453-455
ROLE OF BUFFER SURFACE-MORPHOLOGY AND ALLOYING EFFECTS ON THE PROPERTIES OF INAS NANOSTRUCTURES GROWN ON INP(001)
Authors: BRAULT J GENDRY M GRENET G HOLLINGER G DESIERES Y BENYATTOU T
Citation: J. Brault et al., ROLE OF BUFFER SURFACE-MORPHOLOGY AND ALLOYING EFFECTS ON THE PROPERTIES OF INAS NANOSTRUCTURES GROWN ON INP(001), Applied physics letters, 73(20), 1998, pp. 2932-2934
TYPE-II RECOMBINATION AND BAND-OFFSET DETERMINATION IN A TENSILE-STRAINED INGAAS QUANTUM-WELL
Authors: LUGAND C BENYATTOU T GUILLOT G VENET T GENDRY M HOLLINGER G SERMAGE B
Citation: C. Lugand et al., TYPE-II RECOMBINATION AND BAND-OFFSET DETERMINATION IN A TENSILE-STRAINED INGAAS QUANTUM-WELL, Applied physics letters, 70(24), 1997, pp. 3257-3259
EVALUATION OF H-PLASMA AND THERMAL OXIDE DESORPTION PROCEDURES FOR MBE REGROWTH OF AN INP INGAAS/INP QUANTUM-WELL/
Authors: DROUOT V ROBINSON BJ THOMPSON DA BRU C BENYATTOU T GUILLOT G
Citation: V. Drouot et al., EVALUATION OF H-PLASMA AND THERMAL OXIDE DESORPTION PROCEDURES FOR MBE REGROWTH OF AN INP INGAAS/INP QUANTUM-WELL/, Semiconductor science and technology, 11(8), 1996, pp. 1178-1184
HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/
Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/, Semiconductor science and technology, 11(4), 1996, pp. 576-581
PHOTOLUMINESCENCE AND BAND OFFSETS OF ALINAS INP (VOL 10, PG 1585, 1995)/
Authors: ABRAHAM P PEREZ MAG BENYATTOU T GUILLOT G SACILOTTI M LETARTRE X
Citation: P. Abraham et al., PHOTOLUMINESCENCE AND BAND OFFSETS OF ALINAS INP (VOL 10, PG 1585, 1995)/, Semiconductor science and technology, 11(2), 1996, pp. 254-254
SIMULATION OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SINGLE-QUANTUM-WELL STRUCTURE-BASED ON THE SELF-CONSISTENT SOLUTION OF THE SCHRODINGER AND POISSON EQUATIONS
Authors: BROUNKOV PN BENYATTOU T GUILLOT G
Citation: Pn. Brounkov et al., SIMULATION OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SINGLE-QUANTUM-WELL STRUCTURE-BASED ON THE SELF-CONSISTENT SOLUTION OF THE SCHRODINGER AND POISSON EQUATIONS, Journal of applied physics, 80(2), 1996, pp. 864-871
STRUCTURAL AND OPTICAL-PROPERTIES OF ALINAS INP AND GAPSB/INP TYPE-IIINTERFACES/
Authors: SACILOTTI M ABRAHAM P PITAVAL W AMBRI M BENYATTOU T TABATA A PEREZ MAG MOTISUKE P LANDERS R MORAIS J LECORRE A LOUALICHE S
Citation: M. Sacilotti et al., STRUCTURAL AND OPTICAL-PROPERTIES OF ALINAS INP AND GAPSB/INP TYPE-IIINTERFACES/, Canadian journal of physics, 74(5-6), 1996, pp. 202-208
INVESTIGATIONS OF VERTICAL-CAVITY SURFACE-EMITTING LASER BY PHOTOREFLECTANCE SPECTROSCOPY
Authors: BERGER PD BRU C BENYATTOU T GUILLOT G CHENEVASPAULE A COUTURIER L GROSSE P
Citation: Pd. Berger et al., INVESTIGATIONS OF VERTICAL-CAVITY SURFACE-EMITTING LASER BY PHOTOREFLECTANCE SPECTROSCOPY, Applied physics letters, 68(1), 1996, pp. 4-6
HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/
Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 298-301
PHOTOLUMINESCENCE AND BAND OFFSETS OF ALINAS INP/
Authors: ABRAHAM P PEREZ MAG BENYATTOU T GUILLOT G SACILOTTI M LETARTRE X
Citation: P. Abraham et al., PHOTOLUMINESCENCE AND BAND OFFSETS OF ALINAS INP/, Semiconductor science and technology, 10(12), 1995, pp. 1585-1594
PIEZOELECTRIC FIELD-MEASUREMENTS BY PHOTOREFLECTANCE IN STRAINED INGAAS GAAS STRUCTURES GROWN ON POLAR SUBSTRATES/
Authors: BERGER PD BRU C BALTAGI Y BENYATTOU T BERENGUER M GUILLOT G MARCADET X NAGLE J
Citation: Pd. Berger et al., PIEZOELECTRIC FIELD-MEASUREMENTS BY PHOTOREFLECTANCE IN STRAINED INGAAS GAAS STRUCTURES GROWN ON POLAR SUBSTRATES/, Microelectronics, 26(8), 1995, pp. 827-833
EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIESOF SIGE SI HETEROSTRUCTURES/
Authors: SOUIFI A BENYATTOU T GUILLOT G BREMOND G DUTARTRE D WARREN P
Citation: A. Souifi et al., EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIESOF SIGE SI HETEROSTRUCTURES/, Journal of applied physics, 78(6), 1995, pp. 4039-4045
ADMITTANCE SPECTROSCOPY OF INALAS INGAAS SINGLE-QUANTUM-WELL STRUCTURE WITH HIGH-CONCENTRATION OF ELECTRON TRAPS IN INALAS LAYERS/
Authors: BROUNKOV PN BENYATTOU T GUILLOT G CLARK SA
Citation: Pn. Brounkov et al., ADMITTANCE SPECTROSCOPY OF INALAS INGAAS SINGLE-QUANTUM-WELL STRUCTURE WITH HIGH-CONCENTRATION OF ELECTRON TRAPS IN INALAS LAYERS/, Journal of applied physics, 77(1), 1995, pp. 240-243
LATERAL BAND-GAP MODULATION BY CONTROLLED ELASTIC RELAXATION OF STRAINED MULTIQUANTUM-WELL STRUCTURES ON INP
Authors: LECLERCQ JL VIKTOROVITCH P LETARTRE X NUBAN MF GENDRY M BENYATTOU T GUILLOT G FIERLING G PRIESTER C
Citation: Jl. Leclercq et al., LATERAL BAND-GAP MODULATION BY CONTROLLED ELASTIC RELAXATION OF STRAINED MULTIQUANTUM-WELL STRUCTURES ON INP, Applied physics letters, 67(9), 1995, pp. 1301-1303
OPTICAL-PROPERTIES OF INAS INP SURFACE-LAYERS FORMED DURING THE ARSENIC STABILIZATION PROCESS/
Authors: TABATA A BENYATTOU T GUILLOT G GENDRY M HOLLINGER G VIKTOROVITCH P
Citation: A. Tabata et al., OPTICAL-PROPERTIES OF INAS INP SURFACE-LAYERS FORMED DURING THE ARSENIC STABILIZATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2299-2304
STRAIN RELAXATION STUDIED BY PHOTOLUMINESCENCE AND BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION MEASUREMENTS IN STRAINED INGAAS
Authors: TABATA A BENYATTOU T GUILLOT G CLARK SA MACDONALD JE WESTWOOD DI WILLIAMS RH
Citation: A. Tabata et al., STRAIN RELAXATION STUDIED BY PHOTOLUMINESCENCE AND BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION MEASUREMENTS IN STRAINED INGAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 222-226
OPTICAL AND ELECTRICAL-PROPERTIES OF RARE-EARTH (YB,ER) DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SEGHIER D BENYATTOU T KALBOUSSI A MONEGER S MARRAKCHI G GUILLOT G LAMBERT B GUIVARCH A
Citation: D. Seghier et al., OPTICAL AND ELECTRICAL-PROPERTIES OF RARE-EARTH (YB,ER) DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(8), 1994, pp. 4171-4175
MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY
Authors: ZEKENTES K HALKIAS G DIMOULAS A TABATA A BENYATTOU T GUILLOT G MORANTE JR PEIRO F CORNET A GEORGAKILAS A CHRISTOU A
Citation: K. Zekentes et al., MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 21-25
PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS
Authors: MONEGER S BALTAGI Y BENYATTOU T TABATA A RAGOT B GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS, Journal of applied physics, 74(2), 1993, pp. 1437-1439
BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI
Authors: SOUIFI A BREMOND G BENYATTOU T GUILLOT G DUTARTRE D WARREN P
Citation: A. Souifi et al., BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI, Applied physics letters, 62(23), 1993, pp. 2986-2988
Risultati: 1-23 |