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BARZ A
DOLD P
KERAT U
RECHA S
BENZ KW
FRANZ M
PRESSEL K
Citation: A. Barz et al., GERMANIUM-RICH SIGE BULK SINGLE-CRYSTALS GROWN BY THE VERTICAL BRIDGMAN METHOD AND BY ZONE-MELTING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1627-1630
Citation: M. Franz et al., PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY OF SI-RICH AND GE-RICH SIGE BULK CRYSTALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1717-1720
Citation: T. Kaiser et Kw. Benz, TAYLOR VORTEX INSTABILITIES INDUCED BY A ROTATING MAGNETIC-FIELD - A NUMERICAL APPROACH, Physics of fluids, 10(5), 1998, pp. 1104-1110
Citation: A. Barz et al., GROWTH OF GE1-XSIX (X = 0 TO 0.5) SINGLE-CRYSTALS BY A ZONE-MELTING METHOD, Crystal research and technology, 33(6), 1998, pp. 849-855
Citation: W. Neumann et Kw. Benz, FESTSCHRIFT DEDICATED TO PROF. DR. BORRMANN,GERHARD ON THE OCCASION OF HIS 90TH BIRTHDAY - PREFACE, Crystal research and technology, 33(4), 1998, pp. 3-3
Authors:
ROGALLA M
LIEN Y
PERCIVAL R
HORNUNG M
LUDWIG J
IRSIGLER R
RUNGE K
SOLDNERREMBOLD A
MEINHARDT J
FELDGEN T
FIEDERLE M
BENZ KW
Citation: M. Rogalla et al., THE IMPACT OF DEEP ACCEPTORS ON THE PERFORMANCE OF VPE-GAAS X-RAY-DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 410(1), 1998, pp. 92-95
Authors:
ROGALLA M
BATTKE M
DUDA N
GEPPERT R
GOPPERT R
IRSIGLER R
LUDWIG J
RUNGE K
SCHMID T
JOERGER W
BENZ KW
Citation: M. Rogalla et al., DETERMINATION OF THE EL2 INTRODUCTION RATE AND FERMI-LEVEL SHIFT DUE TO PROTON AND PION IRRADIATION IN SEMIINSULATING GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(1), 1998, pp. 53-60
Authors:
DOLD P
BARZ A
RECHA S
PRESSEL K
FRANZ M
BENZ KW
Citation: P. Dold et al., GROWTH AND CHARACTERIZATION OF GE1-XSIX (X-LESS-THAN-OR-EQUAL-TO-10AT-PERCENT) SINGLE-CRYSTALS, Journal of crystal growth, 192(1-2), 1998, pp. 125-135
Authors:
CROLL A
KAISER T
SCHWEIZER M
DANILEWSKY AN
LAUER S
TEGETMEIER A
BENZ KW
Citation: A. Croll et al., FLOATING-ZONE AND FLOATING-SOLUTION-ZONE GROWTH OF GASB UNDER MICROGRAVITY, Journal of crystal growth, 191(3), 1998, pp. 365-376
Citation: S. Boschert et al., MODELING OF THE TEMPERATURE DISTRIBUTION IN A 3-ZONE RESISTANCE FURNACE - INFLUENCE OF FURNACE CONFIGURATION AND AMPOULE POSITION, Journal of crystal growth, 187(1), 1998, pp. 140-149
Citation: M. Fiederle et al., APPLICATION OF MICROGRAVITY SOLIDIFICATION RESULTS TO THE GROWTH OF BULK CDTE AND RELATED MATERIALS, Journal of crystal growth, 185, 1998, pp. 1339-1339
Citation: P. Dold et al., FLOATING-ZONE GROWTH OF SILICON IN MAGNETIC-FIELDS - I - WEAK STATIC AXIAL FIELDS, Journal of crystal growth, 183(4), 1998, pp. 545-553
Authors:
CROLL A
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DOLD P
BENZ KW
LEHOCZKY SL
Citation: A. Croll et al., FLOATING-ZONE GROWTH OF SILICON IN MAGNETIC-FIELDS - II - STRONG STATIC AXIAL FIELDS, Journal of crystal growth, 183(4), 1998, pp. 554-563
Citation: T. Kaiser et Kw. Benz, FLOATING-ZONE GROWTH OF SILICON IN MAGNETIC-FIELDS - III - NUMERICAL-SIMULATION, Journal of crystal growth, 183(4), 1998, pp. 564-572
Authors:
LAMPERT MD
MEYER BK
HORNUNG M
BENZ KW
PETERSSON A
SAMUELSON L
Citation: Md. Lampert et al., CHARACTERIZATION OF BULK CU0.85IN1.05SE2 BY PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE, Journal of crystal growth, 183(3), 1998, pp. 377-384
Citation: C. Paorici et Kw. Benz, ANNUAL CONFERENCE OF THE GERMAN-CRYSTAL-GROWTH-ORGANIZATION, LSCHAFT-FUR-KRISTALLWACHSTUM-UND-KRISTALLZUCHTUNG, HELD IN FREIBURG, GERMANY, MARCH 5-7, 1997 - PREFACE, Crystal research and technology, 32(8), 1997, pp. 5-5
Authors:
LAUER S
DANILEWSKY AN
MEINHARDT J
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BENZ KW
Citation: S. Lauer et al., SELECTED 3D-TRANSITION METALS IN GALLIUM ANTIMONIDE - VANADIUM, TITANIUM AND IRON, Crystal research and technology, 32(8), 1997, pp. 1095-1102
Authors:
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LAASCH M
KUNZ T
FIEDERLE M
MEINHARDT J
BENZ KW
SCHOLZ K
WENDL W
MULLERVOGT G
Citation: W. Joerger et al., COMPENSATION MECHANISM IN VANADIUM AND GALLIUM DOPED CDTE AND (CD,ZN)TE, Crystal research and technology, 32(8), 1997, pp. 1103-1113
Citation: Y. Inatomi et al., IN-SITU OBSERVATION SETUP FOR SEMICONDUCTOR GROWTH INTERFACE FROM SOLUTION IN A MAGNETIC-FIELD, Crystal research and technology, 32(6), 1997, pp. 759-768
Citation: P. Dold et Kw. Benz, MODIFICATION OF FLUID-FLOW AND HEAT-TRANSPORT IN VERTICAL BRIDGMAN CONFIGURATIONS BY ROTATING MAGNETIC-FIELDS, Crystal research and technology, 32(1), 1997, pp. 51-60
Authors:
LAASCH M
KUNZ T
EICHE C
FIEDERLE M
JOERGER W
KLOESS G
BENZ KW
Citation: M. Laasch et al., GROWTH OF TWIN-FREE CDTE SINGLE-CRYSTALS IN A SEMICLOSED VAPOR-PHASE SYSTEM, Journal of crystal growth, 174(1-4), 1997, pp. 696-707