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SHI Z
THORP D
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Authors:
BERGMANN RB
KOHLER J
DASSOW R
ZACZEK C
WERNER JH
Citation: Rb. Bergmann et al., NUCLEATION AND GROWTH OF CRYSTALLINE SILICON FILMS ON GLASS FOR SOLAR-CELLS, Physica status solidi. a, Applied research, 166(2), 1998, pp. 587-602
Authors:
AICHMAYR G
TOET D
MULATO M
SANTOS PV
SPANGENBERG A
BERGMANN RB
Citation: G. Aichmayr et al., GROWTH MECHANISMS IN LASER CRYSTALLIZATION AND LASER INTERFERENCE CRYSTALLIZATION, Journal of non-crystalline solids, 230, 1998, pp. 921-924
Authors:
BERGMANN RB
ZACZEK C
JANSEN N
OELTING S
WERNER JH
Citation: Rb. Bergmann et al., LOW-TEMPERATURE SI EPITAXY WITH HIGH DEPOSITION RATE USING ION-ASSISTED DEPOSITION, Applied physics letters, 72(23), 1998, pp. 2996-2998
Citation: Rb. Bergmann et al., SOLID-PHASE CRYSTALLIZED SI FILMS ON GLASS SUBSTRATES FOR THIN-FILM SOLAR-CELLS, Solar energy materials and solar cells, 46(2), 1997, pp. 147-155
Authors:
BERGMANN RB
BRENDEL R
WOLF M
LOLGEN P
KRINKE J
STRUNK HP
WERNER JH
Citation: Rb. Bergmann et al., GROWTH OF POLYCRYSTALLINE SILICON FILMS ON GLASS BY HIGH-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION, Semiconductor science and technology, 12(2), 1997, pp. 224-227
Authors:
TOET D
KOOPMANS B
BERGMANN RB
RICHARDS B
SANTOS PV
ALBRECHT M
KRINKE J
Citation: D. Toet et al., LARGE-AREA POLYCRYSTALLINE SILICON THIN-FILMS GROWN BY LASER-INDUCED NUCLEATION AND SOLID-PHASE CRYSTALLIZATION, Thin solid films, 296(1-2), 1997, pp. 49-52
Citation: Rb. Bergmann et al., CRYSTALLINE SILICON FILMS ON A NOVEL HIGH-TEMPERATURE GLASS FOR APPLICATIONS IN MICROELECTRONICS AND PHOTOVOLTAICS, Journal of non-crystalline solids, 218, 1997, pp. 388-390
Citation: Rb. Bergmann et J. Krinke, LARGE GRAINED POLYCRYSTALLINE SILICON FILMS BY SOLID-PHASE CRYSTALLIZATION OF PHOSPHORUS-DOPED AMORPHOUS-SILICON, Journal of crystal growth, 177(3-4), 1997, pp. 191-195
Citation: J. Kuhnle et al., ROLE OF CRITICAL SIZE OF NUCLEI FOR LIQUID-PHASE EPITAXY ON POLYCRYSTALLINE SI FILMS, Journal of crystal growth, 173(1-2), 1997, pp. 62-68
Authors:
TONG QY
LEE TH
WERNER P
GOSELE U
BERGMANN RB
WERNER JH
Citation: Qy. Tong et al., FABRICATION OF SINGLE-CRYSTALLINE SIC LAYER ON HIGH-TEMPERATURE GLASS, Journal of the Electrochemical Society, 144(5), 1997, pp. 111-113
Citation: Rb. Bergmann, OPTICAL IN-SITU MONITORING OF SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON, Journal of crystal growth, 165(3), 1996, pp. 341-344
Authors:
TOET D
KOOPMANS B
SANTOS PV
BERGMANN RB
RICHARDS B
Citation: D. Toet et al., GROWTH OF POLYCRYSTALLINE SILICON ON GLASS BY SELECTIVE LASER-INDUCEDNUCLEATION, Applied physics letters, 69(24), 1996, pp. 3719-3721