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Results: 1-25 |
Results: 25
PHOTOLUMINESCENCE OF II-IV-V-2 AND I-III-VI2 CRYSTALS PASSIVATED IN ASULFIDE SOLUTION
Authors: BESSOLOV VN LEBEDEV MV RUD VY RUD YV
Citation: Vn. Bessolov et al., PHOTOLUMINESCENCE OF II-IV-V-2 AND I-III-VI2 CRYSTALS PASSIVATED IN ASULFIDE SOLUTION, Technical physics letters, 24(11), 1998, pp. 875-876
SULFIDE PASSIVATION OF III-V SEMICONDUCTOR SURFACES - ROLE OF THE SULFUR IONIC CHARGE AND OF THE REACTION POTENTIAL OF THE SOLUTION
Authors: BESSOLOV VN ZHILYAEV YV KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., SULFIDE PASSIVATION OF III-V SEMICONDUCTOR SURFACES - ROLE OF THE SULFUR IONIC CHARGE AND OF THE REACTION POTENTIAL OF THE SOLUTION, Technical physics, 43(8), 1998, pp. 983-985
SULFIDE PASSIVATION OF GAAS - THE ROLE OF THE SULFUR CHEMICAL ACTIVITY
Authors: BESSOLOV VN LEBEDEV MV BINH NM FRIEDRICH M ZAHN DRT
Citation: Vn. Bessolov et al., SULFIDE PASSIVATION OF GAAS - THE ROLE OF THE SULFUR CHEMICAL ACTIVITY, Semiconductor science and technology, 13(6), 1998, pp. 611-614
BAND BENDING ON GAAS(100) - THE DIPOLE LAYER FORMATION ON SOLUTION PASSIVATED SURFACE
Authors: BESSOLOV VN LEBEDEV MV HOHENECKER S ZAHN DRT
Citation: Vn. Bessolov et al., BAND BENDING ON GAAS(100) - THE DIPOLE LAYER FORMATION ON SOLUTION PASSIVATED SURFACE, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 9-10, 1998, pp. 105-114
ELECTRONIC-PROPERTIES OF GAAS(100) SURFACE PASSIVATED IN ALCOHOLIC SULFIDE SOLUTIONS
Authors: BESSOLOV VN LEBEDEV MV IVANKOV AF BAUHOFER W ZAHN DRT
Citation: Vn. Bessolov et al., ELECTRONIC-PROPERTIES OF GAAS(100) SURFACE PASSIVATED IN ALCOHOLIC SULFIDE SOLUTIONS, Applied surface science, 133(1-2), 1998, pp. 17-22
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS(110) CLEAVED IN ALCOHOLIC SULFIDE SOLUTIONS
Authors: BESSOLOV VN KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS(110) CLEAVED IN ALCOHOLIC SULFIDE SOLUTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 876-879
A COMPARISON OF THE EFFECTIVENESS OF GAAS SURFACE PASSIVATION WITH SODIUM AND AMMONIUM SULFIDE SOLUTIONS
Authors: BESSOLOV VN KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., A COMPARISON OF THE EFFECTIVENESS OF GAAS SURFACE PASSIVATION WITH SODIUM AND AMMONIUM SULFIDE SOLUTIONS, Physics of the solid state, 39(1), 1997, pp. 54-57
PASSIVATION OF GAAS IN ALCOHOL-SOLUTIONS OF AMMONIUM SULFIDE
Authors: BESSOLOV VN KONENKOVA EV LEBEDEV MV ZAHN DRT
Citation: Vn. Bessolov et al., PASSIVATION OF GAAS IN ALCOHOL-SOLUTIONS OF AMMONIUM SULFIDE, Semiconductors, 31(11), 1997, pp. 1164-1169
SULFIDIZATION OF GAAS IN ALCOHOLIC SOLUTIONS - A METHOD HAVING AN IMPACT ON EFFICIENCY AND STABILITY OF PASSIVATION
Authors: BESSOLOV VN KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., SULFIDIZATION OF GAAS IN ALCOHOLIC SOLUTIONS - A METHOD HAVING AN IMPACT ON EFFICIENCY AND STABILITY OF PASSIVATION, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 376-379
SULFUR PASSIVATION OF INGAAS ALGAAS SQW LASER (977 NM) FACETS IN ALCOHOL-BASED SOLUTIONS/
Authors: BESSOLOV VN LEBEDEV MV SHERNYAKOV YM TSARENKOV BV
Citation: Vn. Bessolov et al., SULFUR PASSIVATION OF INGAAS ALGAAS SQW LASER (977 NM) FACETS IN ALCOHOL-BASED SOLUTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 380-382
RAMAN-SCATTERING STUDY OF SURFACE BARRIERS IN GAAS PASSIVATED IN ALCOHOLIC SULFIDE SOLUTIONS
Authors: BESSOLOV VN LEBEDEV MV ZAHN DRT
Citation: Vn. Bessolov et al., RAMAN-SCATTERING STUDY OF SURFACE BARRIERS IN GAAS PASSIVATED IN ALCOHOLIC SULFIDE SOLUTIONS, Journal of applied physics, 82(5), 1997, pp. 2640-2642
SOLVENT EFFECT ON THE PROPERTIES OF SULFUR PASSIVATED GAAS
Authors: BESSOLOV VN KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., SOLVENT EFFECT ON THE PROPERTIES OF SULFUR PASSIVATED GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2761-2766
KINETICS OF GAAS(100) SURFACE PASSIVATION IN AQUEOUS-SOLUTIONS OF SODIUM SULFIDE
Authors: BESSOLOV VN IVANKOV AF KONENKOVA EV LEBEDEV MV STRYKANOV VS
Citation: Vn. Bessolov et al., KINETICS OF GAAS(100) SURFACE PASSIVATION IN AQUEOUS-SOLUTIONS OF SODIUM SULFIDE, Semiconductors, 30(2), 1996, pp. 201-206
LUMINESCENCE AND X-RAY PHOTOELECTRON-SPEC TROSCOPY OF GAAS SURFACE SULFIDIZED IN ALCOHOL-SOLUTIONS
Authors: BESSOLOV VN KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., LUMINESCENCE AND X-RAY PHOTOELECTRON-SPEC TROSCOPY OF GAAS SURFACE SULFIDIZED IN ALCOHOL-SOLUTIONS, Fizika tverdogo tela, 38(9), 1996, pp. 2656-2666
MODIFICATION IN ELECTRON WORK-FUNCTIONS F ROM A(3)B(5) SEMICONDUCTINGSURFACE DUE TO THE SULFIDE PASSIVATION
Authors: BESSOLOV VN IVANKOV AF LEBEDEV MV
Citation: Vn. Bessolov et al., MODIFICATION IN ELECTRON WORK-FUNCTIONS F ROM A(3)B(5) SEMICONDUCTINGSURFACE DUE TO THE SULFIDE PASSIVATION, Fizika tverdogo tela, 38(2), 1996, pp. 563-574
ROLE OF THE EFFICIENCY OF SULFIDE COATING FORMING IN THE ELECTRON PASSIVATION OF GAAS SURFACE
Authors: BESSOLOV VN KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., ROLE OF THE EFFICIENCY OF SULFIDE COATING FORMING IN THE ELECTRON PASSIVATION OF GAAS SURFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(18), 1996, pp. 37-42
SULFIDE PASSIVATION OF ILL-V SEMICONDUCTORS - THE STARTING ELECTRONIC-STRUCTURE OF A SEMICONDUCTOR AS A FACTOR IN THE INTERACTION BETWEEN ITS VALENCE-ELECTRONS AND THE SULFUR ION
Authors: BESSOLOV VN IVANKOV AF LEBEDEV MV
Citation: Vn. Bessolov et al., SULFIDE PASSIVATION OF ILL-V SEMICONDUCTORS - THE STARTING ELECTRONIC-STRUCTURE OF A SEMICONDUCTOR AS A FACTOR IN THE INTERACTION BETWEEN ITS VALENCE-ELECTRONS AND THE SULFUR ION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1018-1023
KINETICS OF GAAS(100) PASSIVATION IN ACQUEOUS SOLUTIONS OF SODIUM SULFIDE
Authors: BESSOLOV VN IVANKOV AF KONENKOVA EV LEBEDEV MV STRYKANOV VS
Citation: Vn. Bessolov et al., KINETICS OF GAAS(100) PASSIVATION IN ACQUEOUS SOLUTIONS OF SODIUM SULFIDE, Semiconductors, 29(12), 1995, pp. 1131-1135
INTERFACE EXCITON LUMINESCENCE - AN INDICATION OF INTERFACE INHOMOGENEITIES IN SINGLE GAAS GAALAS HETEROSTRUCTURES/
Authors: BESSOLOV VN EVSTROPOV VV LEBEDEV MV
Citation: Vn. Bessolov et al., INTERFACE EXCITON LUMINESCENCE - AN INDICATION OF INTERFACE INHOMOGENEITIES IN SINGLE GAAS GAALAS HETEROSTRUCTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2684-2688
INCREASE OF THE LEVEL OF CATASTROPHIC OPT ICAL DEGRADATION OF INGAAS-ALGAAS (977 HM) LASER-DIODES AFTER SULFIDIZING IN ISOPROPYL ALCOHOL-BASED SOLUTIONS
Authors: BESSOLOV VN LEBEDEV MV TSARENKOV BV SHERNYAKOV YM
Citation: Vn. Bessolov et al., INCREASE OF THE LEVEL OF CATASTROPHIC OPT ICAL DEGRADATION OF INGAAS-ALGAAS (977 HM) LASER-DIODES AFTER SULFIDIZING IN ISOPROPYL ALCOHOL-BASED SOLUTIONS, Pis'ma v Zurnal tehniceskoj fiziki, 21(14), 1995, pp. 53-56
SULFIDE PASSIVATION OF GAAS SOLUTIONS BAS ED ON ISOPROPYL-ALCOHOL
Authors: BESSOLOV VN IVANKOV AF KONENKOV EV LEBEDEV MV
Citation: Vn. Bessolov et al., SULFIDE PASSIVATION OF GAAS SOLUTIONS BAS ED ON ISOPROPYL-ALCOHOL, Pis'ma v Zurnal tehniceskoj fiziki, 21(1), 1995, pp. 46-50
INTERFACE LUMINESCENCE OF GAAS GA1-XALX AS HETEROSTRUCTURES - THRESHOLD EFFECT OF THE INTERFACE FORMATION CONDITIONS/
Authors: BESSOLOV VN EVSTROPOV VV LEBEDEV MV ROSSIN VV
Citation: Vn. Bessolov et al., INTERFACE LUMINESCENCE OF GAAS GA1-XALX AS HETEROSTRUCTURES - THRESHOLD EFFECT OF THE INTERFACE FORMATION CONDITIONS/, Physical review. B, Condensed matter, 51(23), 1995, pp. 16801-16806
INTERFACE LUMINESCENCE OF GAAS GAALAS STRUCTURES - RELATIONSHIP WITH HETEROJUNCTION FORMATION CONDITIONS/
Authors: BESSOLOV VN EVSTROPOV VV LEBEDEV MV ROSSIN VV
Citation: Vn. Bessolov et al., INTERFACE LUMINESCENCE OF GAAS GAALAS STRUCTURES - RELATIONSHIP WITH HETEROJUNCTION FORMATION CONDITIONS/, Semiconductors, 28(6), 1994, pp. 597-601
WORK FUNCTION OF ELECTRONS FROM GAAS SULF IDIZED SURFACE
Authors: BESSOLOV VN ERSHOV SG IVANKOV AF LEBEDEV MV
Citation: Vn. Bessolov et al., WORK FUNCTION OF ELECTRONS FROM GAAS SULF IDIZED SURFACE, Fizika tverdogo tela, 36(12), 1994, pp. 3601-3606
FORMATION OF A PASSIVATING SULFIDE COATING ON THE SURFACE OF A(3)B(5)SEMICONDUCTORS
Authors: BESSOLOV VN LEBEDEV MV NOVIKOV EB
Citation: Vn. Bessolov et al., FORMATION OF A PASSIVATING SULFIDE COATING ON THE SURFACE OF A(3)B(5)SEMICONDUCTORS, Fizika tverdogo tela, 35(3), 1993, pp. 653-661
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