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Results: << | 101-125 | 126-150 | 151-175 | 176-200 | >>
Results: 101-125/225
CONTACTLESS ELECTROREFLECTANCE STUDY OF A VERTICALLY COUPLED QUANTUM DOT-BASED INAS GAAS LASER STRUCTURE/
Authors: AIGOUY L HOLDEN T POLLAK FH LEDENTSOV NN USTINOV WM KOPEV PS BIMBERG D
Citation: L. Aigouy et al., CONTACTLESS ELECTROREFLECTANCE STUDY OF A VERTICALLY COUPLED QUANTUM DOT-BASED INAS GAAS LASER STRUCTURE/, Applied physics letters, 70(25), 1997, pp. 3329-3331
PROPERTIES OF STRAINED (IN, GA, AL)AS LASERS WITH LATERALLY MODULATEDACTIVE-REGION
Authors: LEDENTSOV NN BIMBERG D SHERNYAKOV YM KOCHNEV V MAXIMOV MV SAKHAROV AV KRESTNIKOV IL EGOROV AY ZHUKOV AE TSATSULNIKOV AF VOLOVIK BV USTINOV VM KOPEV PS ALFEROV ZI KOSOGOV AO WERNER P
Citation: Nn. Ledentsov et al., PROPERTIES OF STRAINED (IN, GA, AL)AS LASERS WITH LATERALLY MODULATEDACTIVE-REGION, Applied physics letters, 70(21), 1997, pp. 2888-2890
GROUND-STATE EXCITON LASING IN CDSE SUBMONOLAYERS INSERTED IN A ZNSE MATRIX - RESPONSE
Authors: LEDENTSOV NN KRESTNIKOV IL MAXIMOV MV IVANOV SV SOROKIN SL KOPEV PS ALFEROV ZI BIMBERG D TORRES CMS
Citation: Nn. Ledentsov et al., GROUND-STATE EXCITON LASING IN CDSE SUBMONOLAYERS INSERTED IN A ZNSE MATRIX - RESPONSE, Applied physics letters, 70(20), 1997, pp. 2766-2767
INAS-GAAS QUANTUM PYRAMID LASERS - IN-SITU GROWTH, RADIATIVE LIFETIMES AND POLARIZATION PROPERTIES
Authors: BIMBERG D LEDENTSOV NN GRUNDMANN M KIRSTAEDTER N SCHMIDT OG MAO MH USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ALFEROV ZI RUVIMOV SS GOSELE U HEYDENREICH J
Citation: D. Bimberg et al., INAS-GAAS QUANTUM PYRAMID LASERS - IN-SITU GROWTH, RADIATIVE LIFETIMES AND POLARIZATION PROPERTIES, JPN J A P 1, 35(2B), 1996, pp. 1311-1319
EVOLUTION OF DEEP LEVELS AND INTERNAL PHOTOEMISSION WITH ANNEALING TEMPERATURE AT ZNSE GAAS INTERFACES/
Authors: YANG X BRILLSON LJ RAISANEN AD VANZETTI L BONANNI A FRANCIOSI A GRUNDMANN M BIMBERG D
Citation: X. Yang et al., EVOLUTION OF DEEP LEVELS AND INTERNAL PHOTOEMISSION WITH ANNEALING TEMPERATURE AT ZNSE GAAS INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2961-2966
SILICON DIOXIDE PASSIVATION OF IN P INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS/
Authors: KOLLAKOWSKI S SCHADE U BOTTCHER EH KUHL D BIMBERG D AMBREE P WANDEL K
Citation: S. Kollakowski et al., SILICON DIOXIDE PASSIVATION OF IN P INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1712-1718
FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX
Authors: EGOROV AY ZHUKOV AE KOPEV PS LEDENTSOV NN MAKSIMOV MV USTINOV VM TSATSULNIKOV AF BERT NA KOSOGOV AO ALFEROV ZI BIMBERG D
Citation: Ay. Egorov et al., FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX, Semiconductors, 30(9), 1996, pp. 879-883
OPTICAL-EMISSION RANGE OF STRUCTURES WITH STRAINED INAS QUANTUM DOTS IN GAAS
Authors: EGOROV AY ZHUKOV AE KOPEV PS LEDENTSOV NN MAKSIMOV MV USTINOV VM TSATSULNIKOV AF ALFEROV ZI FEDOROV DL BIMBERG D
Citation: Ay. Egorov et al., OPTICAL-EMISSION RANGE OF STRUCTURES WITH STRAINED INAS QUANTUM DOTS IN GAAS, Semiconductors, 30(8), 1996, pp. 707-710
AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX
Authors: ALFEROV ZI BERT NA EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV SAKHAROV AV USTINOV VM TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation: Zi. Alferov et al., AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 30(2), 1996, pp. 194-196
A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS
Authors: ALFEROV ZI GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV KOMIN VV KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV RUVIMOV SS SAKHAROV AV TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation: Zi. Alferov et al., A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS, Semiconductors, 30(2), 1996, pp. 197-200
IDENTIFICATION OF RADIATIVE RECOMBINATION CHANNELS IN QUANTUM-DOT STRUCTURES
Authors: TSATSULNIKOV AF LEDENTSOV NN MAKSIMOV MV EGOROV AY ZHUKOV AE RUVIMOV SS USTINOV VM KOMIN VV KOCHNEV IV KOPEV PS ALFEROV ZI BIMBERG D
Citation: Af. Tsatsulnikov et al., IDENTIFICATION OF RADIATIVE RECOMBINATION CHANNELS IN QUANTUM-DOT STRUCTURES, Semiconductors, 30(10), 1996, pp. 938-943
ULTRA-WIDE-BAND (GREATER-THAN 40 GHZ) SUBMICRON INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
Authors: BOTTCHER EH DROGE E BIMBERG D UMBACH A ENGEL H
Citation: Eh. Bottcher et al., ULTRA-WIDE-BAND (GREATER-THAN 40 GHZ) SUBMICRON INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, IEEE photonics technology letters, 8(9), 1996, pp. 1226-1228
LASING AT 3-DIMENSIONALLY QUANTUM-CONFINED SUBLEVEL OF SELF-ORGANIZEDIN0.5GA0.5AS QUANTUM DOTS BY CURRENT INJECTION
Authors: LEDENTSOV NN KIRSTAEDTER N BIMBERG D
Citation: Nn. Ledentsov et al., LASING AT 3-DIMENSIONALLY QUANTUM-CONFINED SUBLEVEL OF SELF-ORGANIZEDIN0.5GA0.5AS QUANTUM DOTS BY CURRENT INJECTION, IEEE photonics technology letters, 8(9), 1996, pp. 1276-1277
ON THE LOCKING RANGE OF HYBRIDLY MODE-LOCKED SEMICONDUCTOR-LASERS
Authors: SCHELL M BIMBERG D KAMIYA T
Citation: M. Schell et al., ON THE LOCKING RANGE OF HYBRIDLY MODE-LOCKED SEMICONDUCTOR-LASERS, IEEE photonics technology letters, 8(8), 1996, pp. 1004-1006
SIZE-DEPENDENT LUMINESCENCE OF GAAS QUANTUM WIRES ON VICINAL GAAS(110) SURFACES WITH GIANT STEPS FORMED BY MBE
Authors: NAKASHIMA H TAKEUCHI M INOUE K TAKEUCHI T INOUE Y FISCHER P CHRISTEN J GRUNDMANN M BIMBERG D
Citation: H. Nakashima et al., SIZE-DEPENDENT LUMINESCENCE OF GAAS QUANTUM WIRES ON VICINAL GAAS(110) SURFACES WITH GIANT STEPS FORMED BY MBE, Physica. B, Condensed matter, 227(1-4), 1996, pp. 291-294
ELECTRONIC-STRUCTURE AND ENERGY RELAXATION IN STRAINED INAS GAAS QUANTUM PYRAMIDS/
Authors: GRUNDMANN M HEITZ R LEDENTSOV N STIER O BIMBERG D USTINOV VM KOPEV PS ALFEROV ZI RUVIMOV SS WERNER P GOSELE U HEYDENREICH J
Citation: M. Grundmann et al., ELECTRONIC-STRUCTURE AND ENERGY RELAXATION IN STRAINED INAS GAAS QUANTUM PYRAMIDS/, Superlattices and microstructures, 19(2), 1996, pp. 81-95
INAS-GAAS QUANTUM DOTS - FROM GROWTH TO LASERS
Authors: BIMBERG D LEDENTSOV NN GRUNDMANN M KIRSTAEDTER N SCHMIDT OG MAO MH USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ALFEROV ZI RUVIMOV SS GOSELE U HEYDENREICH J
Citation: D. Bimberg et al., INAS-GAAS QUANTUM DOTS - FROM GROWTH TO LASERS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 159-173
ZERO-DIMENSIONAL EXCITONS IN (ZN,CD)SE QUANTUM STRUCTURES
Authors: LOWISCH M RABE M STEGEMANN B HENNEBERGER F GRUNDMANN M TURCK V BIMBERG D
Citation: M. Lowisch et al., ZERO-DIMENSIONAL EXCITONS IN (ZN,CD)SE QUANTUM STRUCTURES, Physical review. B, Condensed matter, 54(16), 1996, pp. 11074-11077
DIRECT FORMATION OF VERTICALLY COUPLED QUANTUM DOTS IN STRANSKI-KRASTANOW GROWTH
Authors: LEDENTSOV NN SHCHUKIN VA GRUNDMANN M KIRSTAEDTER N BOHRER J SCHMIDT O BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ZAITSEV SV GORDEEV NY ALFEROV ZI BOROVKOV AI KOSOGOV AO RUVIMOV SS WERNER P GOSELE U HEYDENREICH J
Citation: Nn. Ledentsov et al., DIRECT FORMATION OF VERTICALLY COUPLED QUANTUM DOTS IN STRANSKI-KRASTANOW GROWTH, Physical review. B, Condensed matter, 54(12), 1996, pp. 8743-8750
NATURE OF OPTICAL-TRANSITIONS IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/
Authors: GRUNDMANN M LEDENTSOV NN STIER O BOHRER J BIMBERG D USTINOV VM KOPEV PS ALFEROV ZI
Citation: M. Grundmann et al., NATURE OF OPTICAL-TRANSITIONS IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/, Physical review. B, Condensed matter, 53(16), 1996, pp. 10509-10511
DEEP-LEVEL TRANSIENT-SPECTROSCOPY STUDY OF RHODIUM IN INDIUM-PHOSPHIDE
Authors: DADGAR A AMMERLAHN D NASER A HEITZ R KUTTLER M BIMBERG D BABER N HYEON JY SCHUMANN H
Citation: A. Dadgar et al., DEEP-LEVEL TRANSIENT-SPECTROSCOPY STUDY OF RHODIUM IN INDIUM-PHOSPHIDE, Physical review. B, Condensed matter, 53(11), 1996, pp. 7190-7196
EXCITON RELAXATION IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/
Authors: HEITZ R GRUNDMANN M LEDENTSOV NN ECKEY L VEIT M BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ALFEROV ZI
Citation: R. Heitz et al., EXCITON RELAXATION IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/, Surface science, 362(1-3), 1996, pp. 770-773
STRAIN-INDUCED FORMATION AND TUNING OF ORDERED NANOSTRUCTURES ON CRYSTAL-SURFACES
Authors: SHCHUKIN VA LEDENTSOV NN GRUNDMANN M KOPEV PS BIMBERG D
Citation: Va. Shchukin et al., STRAIN-INDUCED FORMATION AND TUNING OF ORDERED NANOSTRUCTURES ON CRYSTAL-SURFACES, Surface science, 352, 1996, pp. 117-122
AN INTERMEDIATE (1.0-1.5 MONOLAYERS) STAGE OF HETEROEPITAXIAL GROWTH OF INAS ON GAAS(100) DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY
Authors: GURYANOV GM CIRLIN GE GOLUBOK AO TIPISSEV SY LEDENTSOV NN SHCHUKIN VA GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Gm. Guryanov et al., AN INTERMEDIATE (1.0-1.5 MONOLAYERS) STAGE OF HETEROEPITAXIAL GROWTH OF INAS ON GAAS(100) DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY, Surface science, 352, 1996, pp. 646-650
STM AND RHEED STUDY OF INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER EPITAXIAL TECHNIQUES/
Authors: GURYANOV GM CIRLIN GE PETROV VN POLYAKOV NK GOLUBOK AO TIPISSEV SY GUBANOV VB SAMSONENKO YB LEDENTSOV NN SHCHUKIN VA GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Gm. Guryanov et al., STM AND RHEED STUDY OF INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER EPITAXIAL TECHNIQUES/, Surface science, 352, 1996, pp. 651-655
Risultati: << | 101-125 | 126-150 | 151-175 | 176-200 | >>